RECTRON Search Results

Contextual Info: RECTRON SEMICONDUCTOR BAS21 TECHNICAL SPECIFICATION SURFACE MOUNT DIODE SOT-23 Absolute Maximum Items Reverse Voltage Reverse Recovery Time Forward Voltage @ If = 100 mA Forward Current 1 Junction Temp. Storage Temp. Ratings (Ta=25°C) Symbol Ratings VRRM

Contextual Info: SF161CS RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION SF166CS GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes FEATURES Low switching noise Low forward voltage drop Low thermal resistance High current capability Super fast switching speed

DTA143EKA

Contextual Info: RECTRON SEMICONDUCTOR DTA143EKA TECHNICAL SPECIFICATION SOT-23-3L DIGITAL TRANSISTORS TRANSISTORS PNP FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit).

SD101AWS

Contextual Info: RECTRON SEMICONDUCTOR SD101AWS TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Negligible Reverse Recovery Time SOD-323 MECHANICAL DATA Case: Molded plastic Epoxy: UL 94V-O rate flame retardant

CMBD914

Abstract: SD914
Contextual Info: RECTRON SEMICONDUCTOR CMBD914 TECHNICAL SPECIFICATION SOT-23 Absolute Maximum Ratings Ta=25°C ITEMS Symbol Ratings Unit Reverse Voltage VR 75 V Reverse trr 4 ns Recovery Time Forward Voltage VF 1.0 V @ If = 10 mA Forward Current IF 200 mA Junction Temp.

100MHZ

Abstract: BCW61B
Contextual Info: RECTRON BCW61B SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation SOT-23 COLLECTOR MECHANICAL DATA * * * * * 3 Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

BAT85 equivalent

Abstract: BAT85
Contextual Info: RECTRON BAT85 SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Fast Switching Device TRR<4.0nS * DO-35 Package (JEDEC) * Through-Hole Device Type Mounting * Hermetically Sealed Glass * Compression Bonded Construction * All external surfaces are corrosion resistant and leads

RL151G

Abstract: RL152G RL153G RL154G RL155G RL157G
Contextual Info: RL151G RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RL157G GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.5 Amperes FEATURES * * * * Low cost Low leakage Low forward voltage drop High current capability DO-15 MECHANICAL DATA

125OC

Abstract: MMBT2907LT1
Contextual Info: RECTRON SEMICONDUCTOR MMBT2907LT1 TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM -0.6 A * Collector-base voltage V(BR)CBO: -60 V * Operating and storage junction temperature range

RS601M

Abstract: RS602M RS603M RS604M RS605M RS606M RS607M RS604
Contextual Info: RS601M RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RS607M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 6.0 Amperes FEATURES * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak

1SS187

Contextual Info: RECTRON 1SS187 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

50MHZ

Abstract: BC808
Contextual Info: RECTRON BC808 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 200 mW (Tamb=25OC) * Collector current ICM : 500 mA * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

1SS193

Contextual Info: RECTRON 1SS193 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

125OC

Abstract: BAS70WS
Contextual Info: RECTRON BAS70WS SEMICONDUCTOR TECHNICAL SPECIFICATION SCHOTTKY DIODES FEATURES * Fast Switching Speed * Low turn-on voltage * PN Junction Guard for Transient and ESD Protection * Designed for Surface Mount Application * Plastic Material-UL Recognition Flammability

BAT54S

Contextual Info: RECTRON SEMICONDUCTOR BAT54S TECHNICAL SPECIFICATION SOT-23 SCHOTTKY DIODE FEATURES * Power Dissipation PD : 200mW Tamb= 25 OC SOT-23 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed

125OC

Abstract: SD101CW
Contextual Info: RECTRON SD101CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Negligible Reverse Recovery Time SOD-123 MECHANICAL DATA Case: Molded plastic

Contextual Info: RECTRON SEMICONDUCTOR CMPSH-3 TECHNICAL SPECIFICATION SOT-23 PLASTIC-ENCAPSULATE SCHOTTKY DIODE FEATURES * Power dissipation P D: 350 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 30 V * Operating and storage junction temperature range

DTA123YCA

Abstract: sot-23 digital
Contextual Info: RECTRON DTA123YCA SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 DIGITAL TRANSISTORS TRANSISTORS PNP FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow nefative of the input.

SF44

Contextual Info: RECTRON SF44 SEMICONDUCTOR TECHNICAL SPECIFICATION GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE 200 Volts CURRENT 4.0 Amperes FEATURES * * * * * * * High reliability Low leakage Low forward voltage High current capability Super fast switching speed High surge capability

100MHZ

Abstract: FMMT491
Contextual Info: RECTRON FMMT491 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.5 W (Tamb=25OC) * Collector current ICM : 1 A * Collector-base voltage V(BR)CBO : 80 V * Operating and storage junction temperature range

1SS190

Contextual Info: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC

RS801M

Abstract: RS802M RS803M RS804M RS805M RS806M RS807M
Contextual Info: RS801M RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION RS807M SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak

1N4148

Abstract: BAW56 1N4148 75v 150mA diode
Contextual Info: RECTRON SEMICONDUCTOR BAW56 TECHNICAL SPECIFICATION SURFACE MOUNT, DUAL 1N4148 COMMON ANODE DIODE SOT-23 Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VRRM 85 V Reverse trr 4 ns Recovery Time Forward Voltage VF 1.0 V @ If = 50 mA

DTA143EUA

Contextual Info: RECTRON SEMICONDUCTOR DTA143EUA TECHNICAL SPECIFICATION SOT-323 DIGITAL TRANSISTORS TRANSISTORS PNP FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit). * The bias resistors conisit of thin-film resistors with complete isolation to allow negative biasing of the input.