RE LOG 2 TZ 11 Search Results

Contextual Info: www. Datasheet. i n No, 118 2 E 3270 307 Nac 11820 tZ */n• >-j9n-7*nas LA4520 // 4 .5 ,6 1 K y V 7 t > Z f U í f f l 2 c h "V 1 4 '& > < ! - .,. :•J■ .f' t 'f-c:.':XV:. .«*«,V:w - ffl IÊ íH t l'T T T V ijt 'V l'^ lz - Ÿ . •i rtv 'r- v tc y v T y y ,

2TZ11

Abstract: 2TZ21 2 TZ 11 relog 2tz11 relog 2 tz 21 2TZ61 RE LOG 6 TZ 61 RE LOG 2 TZ 11 zeitrelais relog
Contextual Info: Bedienungs­ anleitung Elektronische Zeitrelais 2 TZ 11 2 TZ 21 2 TZ 31 2 TZ 41 2 n 61 1. A l l g e m e i n e s Di e elektronischen Zeitrelais der R e i h e 2 TZ bereichs-Einfunktions-Zeitrelais Einsatz ln industriellen Steuerungen. Grundlage m i k r o e 1ektroniseher

Contextual Info: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH ZBT SRAM MT55L512L18F, MT55L256L32F, MT55L256L36F; MT55L512V18F, MT55L256V32F, MT55L256V36F 8Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • High frequency and 100 percent bus utilization • Fast cycle times: 10ns, 11ns and 12ns

RE LOG 2 TZ 11

Abstract: "halbleiterwerk frankfurt" halbleiterwerk Halbleiterwerk Frankfurt ddr veb VEB Halbleiterwerk Frankfurt scans-048 Frankfurt Oder L192A1A2 Deutschen Demokratischen Republik
Contextual Info: V o rlä u fig e S c h a ltk re is DL 192 D DL 193 D D ie der L o w -Pow er~ Sch o ttk y-T echn o log ie der b eiden Z ä h lim p u ls e B e id e Z ä h le r M it ja te n e in g ä n g e n vorw ärts e in e s TV w ird davon vo rw ä rts b e stim m t, und TR

Contextual Info: cP DS04-13103-5E FUJITSU DATA SHEET LINEAR IC 6-CHANNEL 8-BIT A/D CONVERTER MB4053 6-CHANNEL 8-BIT A/D CONVERTER SUBSYSTEM The Fujitsu MB4053 is 6-channel, 8-bit, single-slope A/D converter subsystem designed to be used in a microprocessor based data control system. This device provides the analog functions

Contextual Info: Socket Tail Square tails of Tiger Buy Sockets nate with Tiger Buy Sockets or lext PCB Socket plugs into Socket Available on (2,54mm) .100" and •2,00mm) .0787" pitch Choice of single row, double row and ultra high density multi-row designs Metal “w asher” option on multirow designs simplifies reflow

RE LOG 6 TZ 61

Contextual Info: ADVANCE MT58LC128K16/18G1 128K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • •

Contextual Info: 64K X 32 Fusion Memory SYNCHRONOUS CACHE RAM FEATURES: . performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with addi­ tional features to accommodate the internal DRAM operation of the memory. These additional features are defined so that

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization

25LS257

Abstract: 74LS258 TLS257 4LS258 Am25LS257
Contextual Info: Am25LS257 • Am54LS/74LS257 Am25LS258 • Am54LS/74LS258 Quadruple 2-Line To 1-Line Data Selectors/Multiplexers With 3-State Outputs D IS T IN C T IV E C H AR AC TER ISTIC S F U N C T IO N A L DESCRIPTION • • The 2-line to 1-line data selector m u ltip lexer can be used to

Contextual Info: ADVANCE MT58LC64K16/18G1 64K X 16/18 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 64Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES • • • • • • • • • • • • • • •

Contextual Info: ADVANCE MT58LC64K32/36E1 64K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES 100-Pin TQFP SA-1 « a * *El 8 w _i > 5 wc)C)C)k>CT) itUL C M to r- L

Contextual Info: PRELIMINARY MT58LC128K16C6 128K X 16 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K SYNCHRONOUS SRAM • • • • • • • • • Fast access time: 7ns Fast OE# access time: 5ns Single +3.3V +10%/-5% power supply SNOOZE MODE for reduced power standby

Contextual Info: ADVANCE MT58LC128K32/36E1 128K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES 100-Pin TQFP SA-1 # # # # # (fi it oí3Ss! í * ty=*(fi8S* „.ft

RE LOG 2 TZ 11

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N -C hannel MOS Field Effect T ra n s is to r de­ PACKAGE DIMENSIONS in m illim e te rs s ig n e d f o r high speed s w itc h in g a pp licatio ns.

gc 301

Abstract: selen-gleichrichter GAZ17 GY125 GD244 VEB M ik ro e le k tro n ik 04A657 ITT transistoren ga106 selen
Contextual Info: Erläuterung der Kurzzeichen von Halbleiterbauelem enten Transistoren B b C 1 15 C 22 b C 1h 2 i ä f h2 1o fT f F 1121 o | Il I2Tj| I E> Im o 11 • i>; o le n s IrKV Io Ic I K Bo In I d l^tot B ung Basisschaltung, Basis E in g an g sk ap azität MOS -FE T )

Contextual Info: ADVANCE MT58LC128K32/36G1 128K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 128K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT FEATURES * * U û. * Si S > (D N liJliJS S S S liJ o ifl_l>§LU O O O CO O

rdl 117-a

Abstract: SONY icx259al ICX259AL sony exview had II ICX259 lpgc LTCM500 KS 220 sony SONY 5003 SONY EXview HAD
Contextual Info: SONY ICX259AL ICX259ÀLi t C C I R ^ Ä Dffîfâ 6mm ( l / 3 M É M tf r * ii * y frd t t z ' i y 9 y a y m o c v m f c m & m Ÿ X ' t o EXview HAD C C D & f ÿ f D & f à K £ *) , W \ 1 pnaICX059CLtC^f t , W K. IS É , D l / > y , S /N £ ¿ :^ M #

Contextual Info: LTC1481 / T L i nTECHNOLOGY Ç A B Ultra-Low Power RS485 Transceiver with Shutdown F€RTURCS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ The LTC1481 is an ultra-low power differential line trans­ ceiver designed for data transmission standard RS485 applications. It will also meet the requirements of RS422.

Contextual Info: 3.3V 128K 8Kx16-BIT CACHE-TAG SRAM For 3.3V Processors PRELIMINARY IDT71V218 Integrated Device Technology, Inc. FEATURES: • 8K x 16 Configuration - 14 Com m on I/O TA G Bits - 2 S eparate I/O Status Bits (VLD and D TY) • Optim ized for 256K B cache and 4G B cacheable space

Contextual Info: 3.3V CMOS HEX SCHMITT-TRIGGER INVERTER DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0 1.27mm pitch SOIC, 0.65mm pitch SSOP and 0.65mm pitch TSSOP packages Extended commercial range of - 40°C to +85°C

8832 "pin compatible"

Contextual Info: ANALOG DEVICES □ FEATURES 300 MSPS Encode Rate 250 MHz Large Signal Input Bandwidth Low Input Capacitance: 17 pF Excellent SNR Single -5 .2 V Power Supply Overflow Bit & Bit Invert Functions 1:2 Demultiplexed Outputs AD9038 MIL-STD-883-Compliant Versions Available

Contextual Info: 19-1109: Rev 0; 7/96 V M X X IV M SOOMsps, 8-B it ADC w ith Track/H old The MAX101A ECL-compatible, 500Msps, 8-bit analogto-digital converter ADC allows accurate digitizing of analog signals from D C to 250MHz (Nyquist frequen­ cy). Dual monolithic converters, driven by the track/hold

Contextual Info: ^ Rt-LiM iN ÄRV AMDH Am7945 Subscriber Line Interface Circuit DISTINCTIVE CHARACTERISTICS • Program mable constant-current feed ■ On-chip Therm al M anagem ent TM G feature ■ Current gain = 200 ■ Two-wire im pedance set by single external impedance