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Catalog Datasheet	Type	Document Tags	PDF
mitsubishi L200 Abstract: c14 fet Contextual Info: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)	Original	RD35HUF2 175MHz, 530MHz, 43Wtyp, 530MHz 45Wtyp, 175MHz mitsubishi L200 c14 fet	PDF
transistor W66 Abstract: w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18 Contextual Info: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G ○ FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)	Original	RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz Oct2011 transistor W66 w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18	PDF
177J Abstract: MOS 3020 RD35HUF2 w18 transistor Contextual Info: < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE COMMON	Original	RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz 177J MOS 3020 w18 transistor	PDF
2.2uH inductor radial Abstract: RD35H rd45 RD4056 Contextual Info: RADIAL LEADED INDUCTORS •OPERATING TEMP RADIAL INDUCTORS -25 ~ +85˚C Including self-generated heat ■FEATURES • The RD Series inductors are available in 3 from factors range from 35 to 45. • For small current applications ■APPLICATION RADIAL LEADED	Original	2851A) RD35/RD35H 2.2uH inductor radial RD35H rd45 RD4056	PDF