RD30HUF1 Search Results

100OHM

Abstract: RD30HUF1
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

Contextual Info: ATTENTION OBSERVE PRECAUTIONS FOR HANDLING MITSUBISHI RF POWER MOS FET Revision date:27th/Apr.’02 ELETROSTATIC SENSITIVE DEVICES RD30HUF1 Silicon MOSFET Power Transistor,520MHz 30 W DESCRIPTION RD30HUF1 is a MOS FET type transistor specifically designed for

transistor rf m 9860

Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
Contextual Info: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for

transistor 636 mitsubishi

Abstract: rd30 100OHM RD30HUF1 RD30HUF1-101 742 mosfet 636 MOSFET TRANSISTOR transistor 1734
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

1299 mosfet

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3

Contextual Info: < Silicon RF Power MOS FET Discrete > RD30HUF1 RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W DESCRIPTION OUTLINE DRAWING RD30HUF1 is a MOS FET type transistor specifically 22.0+/-0.3 designed for UHF RF power amplifiers applications. 18.0+/-0.3

100OHM

Abstract: RD30HUF1 IDQ10
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

147J

Abstract: 100OHM RD30HUF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

Mitsubishi transistor C 1588

Abstract: S 170 MOSFET TRANSISTOR RF Transistor s-parameter 30W RD30HUF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.

RD01MUS1

Abstract: RD02MUS1 RD30HVF1 ANGEN038 1.5kohm RD07MVS1 RD30HUF1 mitsubishi rf
Contextual Info: MITSUBISHI RF POWER SEMICONDUCTORS APPLICATION NOTE Document NO. AN-GEN-038 Date : 16th Sep. 2003 Prepared : S.Kametani Confirmed : T.Ohkawa Test result of surge tolerance for RD-series SUBJECT: SUMMARY: This application note show the test results of surge tolerance for RD-series.

RD100HHF1

Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V

RM15TB-H

Abstract: RM10TB-H RA45H8087M rd00hhf1 rm30tn-h RM10TB RM250HB-10F ps11023-a PS11023 mitsubishi PS11023-A
Contextual Info: MITSUBISHI СИЛОВЫЕ ПРИБОРЫ Применение: — силовые приводы электродвигателей постоянного и переменного тока; — преобразователи электроэнергии и электрогенераторы;

RD01MUS1

Abstract: RD02MUS1 RD07MVS1 RD30HUF1 RD30HVF1 1.5kohm
Contextual Info: APPLICATION NOTE Silicon RF Power Semiconductors Document NO. AN-GEN-038-B Date : 16 th Sep. 2003 Rev. date : 22th Jun. 2010 Prepared : S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Test result of surge tolerance for RD-series

RD01MUS1

Abstract: RD07MVS1 RD02MUS1 RD30HUF1 RD30HVF1 ANGEN038
Contextual Info: APPLICATION NOTE RF POWER SEMICONDUCTORS Document NO. AN-GEN-038-A Date : 16 th Sep. 2003 Rev.date : 7th Jan. 2010 Prepared : S.Kametani Confirmed : T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: Test result of surge tolerance for RD-series