RD 9.1 B2 Search Results

zener 3.3 b2

Abstract: Zener Diode C3 5 zener 5.1 B2 zener diode 2.7 b2 zener 2a1 zener diode 2.4 b2 2A2 zener diode c3 zener 4.7 B2 zener 5.6 B1 zener diode
Contextual Info: H Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature Tj 175 ℃ Tstg -55~+175

Contextual Info: LH Series Zener diode Features 1. Low leakage 2. Low zener impedance 3. High reliability 4. Small surface mounting type Applications Voltage stabilization Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Power dissipation Pd 500 mW Junction temperature

zener diode A3

Abstract: C2 3 zener diode HITACHI HZS-L rd 9.1 b2 HZS6L zener Diode B2 diode Lz 99
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

A2 zener diode

Abstract: 5.6 B1 zener diode 9.1 b2 diode rd 9.1 b2 52Y Diode
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

diode Lz 99

Abstract: HITACHI HZS
Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI ADE-208-120A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.

Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply HITACHI A D E -2 0 8 - 1 20A Z Rev 1 Features • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. • Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.

Zener Diode C3 5

Abstract: ZENER a3 Zener Diode B1 2 4.7 B2 zener zener diode B3 B1 6 zener Zener Diode B1 3 zener diode B2 diode ZENER C2 zener mark code C1
Contextual Info: HZS Series Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply ADE-208-120A Z Rev 1 Features • • • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized power supply, etc. Wide spectrum from 1.5V through 38V of zener voltage provide flexible application.

A2 zener diode

Abstract: zener diode 2.7 b2 zener diode A3 zener diode B3 A2 9 zener diode zener diode B2 Zener Diode C3 4 Zener Diode B1 9 Zener Diode C3 5 5.6 B1 zener diode
Contextual Info: HZ xx Series VOLTAGE 1.6 ~ 38 V, 500 mW Silicon Planar Zener Diode for Stabilized Power Supply Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DO-35 FEATURES Ø 2.0 56.2 z Low leakage, low zener impedance and

9.1 b2 diode

Abstract: diode Lz 99
Contextual Info: HZS-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-121A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

zener diode 11 b1

Abstract: zener diode 2.0 b2 zener diode 2.7 b2 diode 9.1 b3 zener 5.1 B2 Zener Diode 2.0 B1 B3 5.6 zener 2.0 B1 zener zener B2 12
Contextual Info: MCC H2 Series THRU H36 Series
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Low Leakage Low Zener Impedance High Reliability 500 mW Zener Diode 1.7 to 37.2 Volts Maximum Ratings

2.0 B1 zener

Contextual Info: MCC H2 Series THRU H36 Series
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features Low Leakage Low Zener Impedance High Reliability 500 mW Zener Diode 1.9 to 37.2 Volts

ECG 177 zener diode

Abstract: B2 Zener colour code diode zener zener diode a3 zener marking hitachi zener color codes Zener Diode B1 9 A2 9 zener diode B2 marking code Zener b3 zener
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application ADE-208-118A Z Rev. 1 Nov. 1996 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

diode 9.1 b3

Abstract: diode Lz 99 zener diode A3 hz6a-2l 5.6 B1 zener diode HZ6L A2 zener diode HITACHI HZ-L ADE-208-118A HZ7L
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

diode HZ27L-3

Abstract: hz11l
Contextual Info: HZ-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application HITACHI ADE-208-118A Z Rev 1 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for

Contextual Info: P roduct specification Philips Sem iconductors 3.3V Parallel printer interface transceiver/buffer 74LVC1284 FEATURES DESCRIPTION • A synchronous operation The 74LVC1284 parallel interlace chip is designed to provide an asynchronous, 4-bit, bi-directional, parallel printer interface for

DO-204AH

Abstract: GZ11 GZ12 GZ15 GZ16 GZ18 GZ20 GZ22
Contextual Info: GZ Series Zener Diodes t c u d o r P w e N DO-204AH DO-35 Glass VZ Range 2.0 to 36V Power Dissipation 500mW Features • Silicon Planar Power Zener Diodes. • Voltage spectrum from 2.2V to 38V • The Zener voltages are graded according to voltage bands instead of by tolerance.

DO-204AH

Abstract: GZ11 GZ12 GZ15 GZ16 GZ18 GZ20 GZ22 4.7 B2 glass diodes zener 5.1 B2
Contextual Info: GZ Series Zener Diodes t c u d o r P w e N DO-204AH DO-35 Glass VZ Range 2.0 to 36V Power Dissipation 500mW Features • Silicon Planar Power Zener Diodes. • Voltage spectrum from 2.2V to 38V • The Zener voltages are graded according to voltage bands instead of by tolerance.

2EZ39D5

Abstract: BZM55C2V0 BZM55C2V2 BZM55C2V4 BZM55C39 BZM55C43 BZM55C75 BZT55C2V0 BZT55C2V2 BZT55C2V4
Contextual Info: MCC TM Micro Commercial Components Micro Commercial Components Corp. Products End of Life Notification Issue date: Feb-11th-2010 EOL No.#:020910 Last Buy Date :N/A Description and Purpose: MCC has undergone a review of its core business and products , and

HZU30L-1

Abstract: Zener Diode B1 zener diode 332
Contextual Info: HZU-L Series Silicon Epitaxial Planar Zener Diode for Low Noise Application REJ03G0043-0200Z Rev.2.00 Aug.18.2003 Features • Diode noise level of this series is approximately 1/3-1/10 lower than the HZ series. • Low leakage and low zener impedance. • Wide spectrum from 5.2V through 38V of zener voltage provide flexible application.

HZ11

Abstract: HZ12 HZ15 HZ16 HZ18 HZ20 HZ22 HZ24 HZ27
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

B2 Zener

Abstract: HZ11L HZ12L HZ15L HZ16L HZ18L HZ20L HZ22L HZ24L HZ27L
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1ZB36

Abstract: 1ZB220-Y ZB30 1ZB20 zener 1ZB30 DIODE 1zb36 zener B5.1 ZB91 B5.1 zener ZB2 ZENER
Contextual Info: 1ZB6.8 1ZB390 SILICON DIFFUSED TYPE ZENER DIODE CONSTANT VOLTAGE REGULATION. TRANSIENT SUPPRESSORS. . Average Power Dissipation : P=1W . Peak Reverse Power Dissipation : Pr s m = 200W at tw=200 Js . Zener Voltage : Vz=6.8~390V . T o l e r a n c e of Z e n e r V o l t a g e

P903

Abstract: 4X103 P2051 p819 B1920-01
Contextual Info: HAMAMATSU CORP 1=1E D • 422^ 30^ 0 G 0 2 7 2 2 2 PbSe Photoconductive Ceils Characteristics Type No. Out­ line No. P.24 25 Package Window Material Effective Sensitive Area ' Size Effective Sensitive Area Measure­ ment Temp. (mm (mm2) IR Cutoff Wave­

IXTN79N20

Abstract: ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20
Contextual Info: IXTN79N20 V DSS MegaMOS FET I D25 RDS on N-Channel Enhancement Mode = 200 V = 85 A = 25 m fì OD e 1 KS ^ 1 ÒS Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 1 50°C 200 V VDGR Tj = 25°C to 150°C; RGS= 10 kQ 200 V VGS Continuous ±20 V VCSM