RD 24 105 RF Search Results

Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF November 2007 - Rev 02-Nov-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

CMM1100-QF

Abstract: CMM1100-QF-0N00 CMM1100-QF-0N0T
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF August 2009 - Rev 29-Aug-09 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

CMM1100-QF

Abstract: CMM1100-QF-0N00 CMM1100-QF-0N0T CMM1100-QF-EV1 C3029
Contextual Info: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier, QFN CMM1100-QF November 2007 - Rev 02-Nov-07 Features Self Bias Architecture 15.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point RoHS Compliant SMD, 4x4 mm QFN Package 100% RF, DC, and Noise Figure Testing

one chip 9381

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

mmic distributed amplifier

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1004-BD XD1004-BD-000V XD1004-BD-EV1 one chip 9381
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier December 2006 - Rev 19-Dec-06 D1004-BD Features Ultra Wide Band Driver Amplifier Self Biased Architecture 17.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

B1007-QT

Contextual Info: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing

Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

OC 74 germanium transistor

Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010

D1005

Abstract: 22DSBA0423 DM6030HK TS3332LD XD1005-BD XD1005-BD-000V XD1005-BD-EV1
Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier January 2007 - Rev 16-Jan-07 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

Contextual Info: 10.0-40.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1005-BD Features Ultra Wide Band Driver Amplifier Self Bias Architecture 23.0 dB Small Signal Gain 5.0 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

PT1000 CONVERSION TABLE

Abstract: ER 2510 type bobbin RG-9B/U cable 2j 183j a431 csp 1040 39p SMD MARKING CODE 19l RG-180 connector 685 35K 222M SE SMD marking code BR24
Contextual Info: Table of Contents RF Inductors Surface Mount Radial Leaded Series EMI Series 4221 Series 4222 Series 8454 Series SMB 2.5 107 108 109 110 111 112 113 114 115 Surface Mount Series P1330 Series P1812 Series 2512 Series 3483 Series S3483 Series SDS130 Series SDS680

SCL 8018

Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 transistor 7809
Contextual Info: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing

transistor smd qe

Abstract: P1020 15MPA0566 CMM1118-QT XP1020-QE XP1020-QE-0N00 XP1020-QE-EV1 XU1005-QD
Contextual Info: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN P1020-QE January 2007 - Rev 26-Jan-07 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband’s two stage 11.0-19.0 GHz GaAs

Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

XP1018-BD

Abstract: DM6030HK TS3332LD XP1018 XP1018-BD-000X XP1018-BD-EV1 XU1004
Contextual Info: 37.0-42.0 GHz GaAs MMIC Power Amplifier P1018-BD February 2007 - Rev 01-Feb-07 Features Excellent Transmit Output Stage Output Power Adjust 26.0 dB Small Signal Gain +25.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883

max cw 4004

Abstract: XP1026-BD-EV1 30SPA0553 DM6030HK P1026-BD XP1026-BD XP1026-BD-000V ID213
Contextual Info: 27.0-32.0 GHz GaAs MMIC Power Amplifier P1026-BD January 2010 - Rev 25-Jan-10 Features Ka-Band 2W Power Amplifier 21.0 dB Small Signal Gain +33.0 dBm Saturated Output Power +40.0 dBm Output Third Order Intercept OIP3 100% On-Wafer RF, DC and Output Power Testing

A1R8

Abstract: transistor a561 A561 transistor AR24 br51 transistor a3r6 A431 transistor A431 MIL-PRF-39010 A330
Contextual Info: ER Series MIL-PRF-39010 MI A L I TA R Y PP ROVE D Established Reliability Inductors RF INDUCTORS ER1641 Physical Parameters and Environmental Characteristics Inductance Range, µH Core Material Sleeve Length, Inches Millimeters Diameter, Inches Millimeters

transistor a561

Abstract: A561 transistor transistor A431 A1R8 B2R2 a3r6 A431 br39 transistor ma a330 AR10
Contextual Info: ER Series MIL-PRF-39010 MI L I TA R Y A PP ED ROV RF INDUCTORS Established Reliability Inductors Physical Parameters and Environmental Characteristics ER1641 ER1840 ER1025 ER1537 MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF- MIL-PRF39010/1

LM 1709 cn

Abstract: GPD 38 GPD-403 GPD-1002/-1062 IC 1709 CN GPD-1001 GPD-130 GPD-404 GPD251 GPD402
Contextual Info: What HEWLETT mLEM P A C K A R D A vantek Products IF/RF Low Cost Cascadable Modules Selection Guide GPD Series GPM Series Features Description Case Types • Sm all Size The GPD and GPM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

P1019-BD

Contextual Info: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1019-BD July 2006 - Rev 30-Jul-06 Features Excellent Transmit Output Stage Temperature Compensated Output Detector 18.0 dB Small Signal Gain +27.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing