RCE MARKING Search Results

Contextual Info: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE SO P-8 PRODUCT SUMMARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce VDS V R o s ic a m o ) 25 4. Gate 5. 6, 7, 8. Drain Features Id (A) 1 5 V cs= 10V 10 21 @ V « s= 4 .5 V

Contextual Info: TAIW AN s TSM4410 SEMICONDUCTOR 25V N-Channei MOSFET b RoHS CO M PLIANCE SO P-8 PRODUCT SUM M ARY Pin Definition: 1. S ou rce 2. S ou rce 3. S ou rce R o s tru m ) I d A) 1 5 V cs= 10V 10 21 @ V{;r> = 4.5V 8 V DS (V) 25 4. Gate 5. 6, 7, 8. Drain Features

TSM4410

Abstract: TSM4410CS D0351
Contextual Info: s TAIWAN TSM4410 S E M IC O N D U C T O R 25V N-Channei MOSFET pb RoHS CO M PLIANCE SOP-8 PRODUCT SUM M AR Y Pin Definition; 1. S ou rce 2. S ou rce 3. S ou rce V DS (V) 4. Gate R o s ic a m o ) Id (A) 1 5 V c s = 10V 10 21 @ V {^ = 4 . 5 V 8 25 5. 6, 7, 8. Drain

034-AA

Abstract: tic 136
Contextual Info: SIPM OS N Channel M O S F E T B S P 89 Preliminary Data • S IP M O S - enhancem en t m ode • D rain-sou rce voltag e Vfcs = 240V • C o n tin u o u s drain current l D = 0.34A • D rain-sou rce o n -resistan ce A dston = 6.0CÎ • Total pow er d issip atio n

tic 223

Contextual Info: B S P 149 SIPM OS N Channel M O S F E T Preliminary Data • S IP M O S - dep letio n m ode • D rain-sou rce voltage Vfcs= 200V • C o n tin u o u s drain current /„ = .44A • D rain-sou rce o n-resistance ftos on = 3.50 Pn = 1 ,5W • Total pow er d issip ation

design ideas

Abstract: FMMT591A 91A SOT23 FMMT491A TS16949 ZETEX complementary transistor PRODUCT LINE
Contextual Info: A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol

Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT591A ISSUE 3 - OCTOBER 1995_ FEATURES Low equivalent on resistance RCE Mrtl = 350mi2 a t 1A PART MARKING DETAIL - 91A COMPLEMENTARY TYPE- FMMT491A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

transistor marking ra

Contextual Info: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)

FZT491A

Abstract: FZT591A transistor marking 2A H DSA003675
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT591A ISSUE 1 - DECEMBER 2001 FEATURES Low equivalent on resistance RCE sat = 350m PART MARKING DETAIL COMPLEMENTARY TYPE - FZT591A C at 1A FZT591A FZT491A E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

91A SOT23

Abstract: design ideas FMMT591 FMMT491A TS16949
Contextual Info: A Product Line of Diodes Incorporated FMMT591 SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol VCBO

up2518

Abstract: UP2518G-AE3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT)

up2518

Abstract: UP2518-AE3-6-R UP2518L-AE3-6-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP EPITAXIAL SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)

ZXTN07012EFF

Abstract: ZXTP07012EFF ZXTP07012EFFTA
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: Transistors IC SMD Type Product specification FCX1149A Features 2W power dissipation. 20A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 45mv Typ. Extremely low equivalent on-resistance. RCE sat 67mÙ at 3A.

ZXTP2025

Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

ZXTN25012EFH

Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
Contextual Info: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to

zxtp25020cfh

Contextual Info: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to

up2518

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 Preliminary PNP TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS „ FEATURES *Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)

Contextual Info: Transistors IC SMD Type Product specification FCX1053A Features 2W power dissipation. 10A peak pulse current. Excellent HFE characteristics up to 10 Amps. Extremely low saturation voltage E.g. 21mv Typ. Extremely low equivalent on-resistance. RCE sat 78mÙ at 4.5A.

ZXTN25100CFH

Abstract: design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER
Contextual Info: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to

TRANSISTOR MARKING 1d8

Abstract: TS16949 ZXTN19020DFF ZXTP19020DFF ZXTP19020DFFTA
Contextual Info: ZXTP19020DFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -4V IC cont = 5.5A VCE(sat) < 44mV @ 1A RCE(sat) = 26mΩ PD = 1.5W Complementary part number: ZXTN19020DFF Description C Advanced process capability and package design have been used to

Contextual Info: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP2518 PNP SILICON TRANSISTOR LOW VCE SAT PNP SILICON POWER TRANSISTORS FEATURES 3 * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A)