RCD MODULE Search Results

disjoncteur differentiel

Abstract: interruptor diferencial VAL-CP-350-ST-GY VAL-CP-350 esquema
Contextual Info: ESPAÑOL FRANÇAIS ENGLISH DEUTSCH VAL-CP-RCD-. es una combinación de un módulo de protección contra sobretensiones SPD Class II para la alimentación eléctrica de 230 V y de un interruptor diferencial (FI/RCD, tipo A). VAL-CP-RCD-. est une combinaison entre un

2CSB202101R1250

Abstract: DDA202 DDA204 2CSB204101R1400 2CSB204101R1250 2CSB203101R5250 2CSB204101R3400 DDA203 2CSB202101R2250 2CSB202101R1400
Contextual Info: System Selection tables pro M compact RCD-blocks DDA 200 series A y type DDA 200 A DDA 200 A type A Function: RCD-block for assembly on site with MCBs S 200 series. Protection against the effects of sinusoidal alternating and direct pulsating earth fault currents; protection against indirect contacts

ac dc led constant current driver

Contextual Info: WHITEPAPER | Jul 2011 HIGH POWER LED AND DC/DC-DRIVER APPLICATIONS RECOM Electronic GmbH | Otto-Hahn-Str. 60 | D-63303 Dreieich | Tel. +49 6103 30007-0 | info@recom-electronic.com | www.recom-electronic.com WP HIGH POWER LED AND RCD APPLICATIONS RECOM Electronic Whitepaper

PFIM

Abstract: PLS-6 PLS6-B12 PLS6-B25 BSEN60898 sg1900 630848 SG19002 1NB01 SG180
Contextual Info: Consumer Units tra Combinations Consumer Units Designed and built to the latest British and European standards to meet the needs of the building and refurbishment markets. A variety of MCB’s, RCD’s and RCBO’s offer outstanding performance with 6kA and 10kA

wiring diagram of rccb

Abstract: rcbo circuit diagram mcb circuit diagram ASN100 A16UE type b mcb mcb tripping curves mem RCBO Circuit Breakers to BS EN 60898 AA633
Contextual Info: PROTECTIVE DEVICES & ACCESSORIES MEMERA A comprehensive range of protective devices and accessories to complement both the Memera 2000 and Memera 2000 AD consumer unit range. 250 Ancillary devices Contactors and impulse relays 253-254 253 Enclosures 255 HRC fuse modules

MT4C4007JDJ

Contextual Info: ADVANCE MICRON MT9D136A X, MT18D236A X 1 MEG, 2 MEG x 36 DRAM MODULES DRAM MODULE 1 MEG, 2 MEG x 36 • TECHNOLOGY, INC. 4, 8 MEGABYTE, 5V, ECC, EDO PAGE MODE FEATURES • Four CAS# ECC pinout in a 72-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process

Contextual Info: MICRON TECHNOLOGY INC ADVANCE |V /|C Z R O N 8 MEG SSE D X MT16D832 32, 16 MEG x 16 DRAM MODULE • 0 0 0 4 f l2 5 DRAM MODULE ^ 5 7 ■ ■ MRN _ 8 MEG x 32,16 MEG x16 FAST PAGE MODE • Industry standard pinout in a 72-pin single-in-lìne package • High-performance, CMOS silicon-gate process

DM-01

Abstract: Techno RC
Contextual Info: MT2D18 1 MEG x 8 DRAM MODULE I^ IC R O N REFRESH _ Returning RAS and CAS HIGH terminates a m emory cycle and decreases chip current to a reduced standby level. A lso, the chip is preconditioned for the next cycle during the RAS HIGH time. M emory cell data is retained in its

mt4c16m1

Contextual Info: ADVANCE I^ IIC R O N 16 MEG X MT8D168 8 DRAM MODULE 16 MEG X 8 DRAM DRAM MODULE FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

Contextual Info: ADVANCE MICRON I 4 MEG TECHNOIOSV. INC. SMALL-OUTLINE DRAM MODULE 16 MEGABYTE, 3.3V, OPTIONAL EXTENDED REFRESH, FAST PAGE OR EDO PAGE MODE PIN ASSIGNMENT Front View • JEDEC- and industry-standard pinout in a 72-pin, small-outline, dual-in-line memory module (DIMM)

Contextual Info: |U |IC=RO N 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG x 36 DRAM FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible

MT18D236

Contextual Info: [MICRON 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG X 36 DRAM FAST-PAGE-MODE FEATURES PIN A SSIG N M EN T Top View • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance CM OS silicon-gate process. • Single 5V ±10% power supply

Contextual Info: MT2D25632, MT4D51232 256K, 512K x 32 DRAM MODULES U IIC Z R O N 256K, 512K x 32 DRAM MODULE 1, 2 MEGABYTE, 5V, FAST PAGE MODE FEATURES PIN ASSIGNMENT (Front View • JEDEC- and industry-standard pinout in a 72-pin single-in-line memory module (SIMM) • High-performance CMOS silicon-gate process

Contextual Info: MT8D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM MODULE 4 MEG X 8 4 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin single-in-line m emory module SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply

Contextual Info: ADVANCE |U1l =RON 16 MEG X M T9D169 9 DRAM M ODULE 16 MEG X 9 DRAM DRAM MODULE FAST-PAGE-MODE FEATURES PIN ASSIGNMENT (Top View • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5 V ± 10% power supply

Contextual Info: MICRO N T E C H N O L O G Y INC MICRON I IIW I-IW I SSE ]> 4 MEG DRAM MODULE • X bllism 32, 8 MEG X DG DH ñl S MT8D432 16 DRAM MODULE 4 MEG x 32, 8 MEG x 16 FEATURES • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process

Contextual Info: ADVANCE MICRON I , ^ rn ” T 4 MEG 32, 8 MEG 4 MEG X X MT8D432 16 DRAM MODULE 32, 8 MEG 16 X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Industry standard pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process

T3D19

Contextual Info: |V|IC =R O N 1 MEG DRAM MODULE 1 MEG X X M T3D19 9 DRAM M O D ULE 9 DRAM FAST-PAGE-MODE MT3D19 LOW POWER, EXTENDED REFRESH (MT3D19 L) FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CMOS silicon-gate process

micron mt9d

Abstract: 512-CYCLE
Contextual Info: |V |IC = R O I\J 1 MEG DRAM MODULE X MT9D19 9 DRAM MODULE 1 MEG x 9 DRAM FAST PAGE MODE MT9D19 LOW POWER, EXTENDED REFRESH (MT9D19 L) FEATURES • Industry standard pinout in a 30-pin single-in-line package • High-performance, CM OS silicon-gate process

MT4C1024DJ

Contextual Info: [MICRON 1 MEG 1 MEG DRAM MODULE X X MT8D18 8 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT8D18 LOW POWER, EXTENDED REFRESH (MT8D18L) FEATURES • Industry-standard pinout in a 30-pin single-in-line package • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

MT4C4007JDJ

Abstract: L32x MT4C4007 MT80132 MT160232 micron simm
Contextual Info: M ir -a r ìM I MT8D132 X , MT16D232(X) 1 MEG, 2 MEG X 32 DRAM MODULES DRAM 1 MEG, 2 MEG x 32 M O D U L E 4, 8 8 MEGABYTE, MEGABYTE, 5V, 5V, FAST R 4, PAGE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin,

MT3D19

Abstract: MT3D mt4c1024d
Contextual Info: [M IC R O N 1 MEG DRAM MODULE 1 MEG X MT3D19 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line memory module • High-performance CM OS silicon-gate process • Single 5V +10% pow er supply • Low power, 9mW standby; 625mW active, typical

MT9D136

Contextual Info: |U|IC=RO N 1 MEG DRAM MODULE X MT9D136 36 DRAM M ODULE 1 MEG x 36 DRAM FAST-PAGE-MODE FEATURES PIN ASSIGNMENT Top View • Common RAS control pinout in a 72-pin single-in-line package • High-perform ance CM OS silicon-gate process. • Single 5V +10% power supply

MT16D832-6/7

Contextual Info: MICRON MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x32 I TECHNOLOGY, MC. 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)