RBV1506 Search Results

RBV-2506

Abstract: RBV-1306 RBV-1506 RBV1506S RBV-1506S
Contextual Info: Bridge Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. IFSM (A) With Heatsink RBV-1306 Tj (°C) Tstg (°C) VF (V) max per IF element (A) 50Hz Half-cycle Sinewave Single Shot 13 1.2 80 IR (µA)

RBV-1506

Abstract: AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Ta °C Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 1.0 45 –40 to +150 0.97 1.0 10 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80

FMPG2F

Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179

S1WB60

Abstract: SIWB RBV-1506 S1WB(A)60B 100C RBV-2506 RBV-602L RBV-604 RBV-606 RBV-606H
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

SI8011

Abstract: Toshiba axial diodes g-746
Contextual Info: 1-1-2 Switching Mode Regulator ICs Application Note • Heat Dissipation and Reliability ■ Mounting Torque The reliability of an IC is highly dependent on its operating temperature. Please be sure to apply silicone grease to the IC and to mount it to the

diode 8603

Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

RBV-406M

Abstract: RM1Z 52 RBV-606 RBV-606H AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S
Contextual Info: 49 0.4 0.6 600 1.0 Center-tap 50 1.2 2.1 50 5.5 51 4.05 Bridge 51 6.45 • External Dimensions 2.9±0.1 50.0±1.0 7.2±0.2 100 22 0.13 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80 –40 to +150

RM1Z 12

Abstract: rectifier rbv-606 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

RBA-401

Abstract: RBA402 RBA-402 LB-156 RBV-602 RBA401 RBV-406 RBV404 lb156 FMM-36S
Contextual Info: RECTIFIER DIODES CENTER-TAP TÏPE MICROWAVE OVEN DIODES Absolute Maximum Ratings Type No. V rm lo I f sm (V) (A) with Fin (A) FMM-22S.R 200 FMM-24S.R 400 FMM-26S.R 600 FMM-31S.R 100 FMM-32S.R 200 FMM-34S.R 400 FMM-36S.R 600 Absolute Maximum Ratings Elee. Char, at 25°C

B 2306 BARRIER RECTIFIER

Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

UX-F5B

Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100

SE012

Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)

Contextual Info: LESHAN RADIO COMPANY ， LTD. D15SB10 RBV1502S Thru D15SB100(RBV1507S) FEATURES ．Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 ．This series is UL listed under the Recognized Component index,file number E231047 ．Single-in-line package

RBV-1506

Abstract: AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M RBV-4086H RBV-4106M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

SIWB

Abstract: btb 137 RBV-1506 S1RBA40 S1WB(A)60B S1WB60 100C RBV-2506 RBV-602L RBV-604
Contextual Info: - fé Wì £ tfc « PRSM CkW RBV-602L BBV-604 RBV-606 RBV-606H RBV-608 RBV-1506 RBV-2506 RM30TB-H RM30TB-M RM30TC-24 RM30TC-2H RM75TC-24 RM75TC-2H RM75TC-H RM75TC-M RM100D2Z—40 S1NB20 S1NB60 S1RBA10 S1RBA20 S1RBA20Z S1RBA40 S1RBA40Z S1RBA60 S1RBA80 S1VB20

Contextual Info: 4-1 Rectifier Diodes ●Bridge VRM V 100 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM max Ta

RBV-1506

Abstract: AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S RBV-406 RBV-406H RBV-406M
Contextual Info: 49 0.4 0.6 600 1.0 Center-tap 50 1.2 2.1 50 5.5 51 4.05 Bridge 51 6.45 • External Dimensions 2.9±0.1 50.0±1.0 7.2±0.2 100 22 0.13 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80 –40 to +150

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

shindengen mr5060

Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A

diode RBV-406M

Abstract: DIODE rbv 602 Diode rbv-408
Contextual Info: 4-1 Rectifier Diodes VRM V IF (AV) (A) Package Axial Values in parentheses are for the products (Body Diameter/Lead Diameter) with heatsinks Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H)