RB085T Search Results

2360A

Abstract: RB085T-40
Contextual Info: RB085T-40 Diodes Schottky barrier diode RB085T-40 zApplications Switching power supply zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 15.0±0.4 0.2 8.0 8.0±0.2 12.0±0.2 5.0±0.2 ① 1.2 13.5MIN zConstruction Silicon epitaxial planar

max 083

Abstract: VR90 RB085T-90 RB085T
Contextual Info: Data Sheet Schottky barrier diode RB085T-90 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 9 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

RB085T-60

Contextual Info: RB085T-60 Diodes Schottky barrier diode RB085T-60 zApplications Switching power supply zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 2.8±0.2 0.1 5.0±0.2 ① 13.5MIN 1.2 zConstruction Silicon epitaxial planar 15.0±0.4 0.2

7281P

Abstract: RB085T-40
Contextual Info: Schottky barrier diode RB085T-40 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 8 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

RB085T-40

Contextual Info: Data Sheet Schottky barrier diode RB085T-40 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 8 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

500E

Contextual Info: REFERENCE 14-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB085T-90 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

Schottky Diode 40V 5A

Abstract: RB085T-40
Contextual Info: RB085T-40 Diodes Schottky barrier diode RB085T-40 zApplications Switching power supply zDimensions Unit : mm zStructure 4.5±0.3 0.1 2.8±0.2 0.1 15.0±0.4 0.2 8.0±0.2 12.0±0.2 1.2 13.5MIN zConstruction Silicon epitaxial planar

RB085T-60

Contextual Info: RB085T-60 Diodes Schottky barrier diode RB085T-60 zDimensions Unit : mm zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 13.5MIN 1.2 zConstruction Silicon epitaxial planar 15.0±0.4 0.2 5.0±0.2 ① 8.0±0.2

RB085T-40

Contextual Info: Data Sheet Schottky barrier diode RB085T-40 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 8 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

RB085T-60

Contextual Info: Data Sheet Schottky barrier diode RB085T-60 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C)

2360a

Abstract: RB085T-60 rb085t
Contextual Info: RB085T-60 Diodes Schottky barrier diode RB085T-60 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8± 0.2 2.8±0.2 0.1 1.1 5.0± 0.2 ① 8.0 7.2

RB085T-60

Abstract: RB085T
Contextual Info: RB085T-60 Diodes Schottky barrier diode RB085T-60 zDimensions Unit : mm zApplications Switching power supply zStructure 㪋㪅㪌㫧㪇㪅㪊 䇭䇭䇭㩷㪇㪅㪈 㪉㪅㪏㫧㪇㪅㪉 䇭䇭䇭㩷㪇㪅㪈 㪌㪅㪇㫧㪇㪅㪉 㽲 㪈㪊㪅㪌㪤㪠㪥

RB085T-40

Contextual Info: RB085T-40 Diodes Schottky barrier diode RB085T-40 zExternal dimensions Unit : mm zStructure 9.9 0.8 2.2 0.3 zApplications Switching power supply 10.0 1.8± 0.2 4.5±0.3 0.1 2.8±0.2 0.1 1.1 ① 15.0 7.2 8.0 8.0± 0.2 12.0± 0.2 φ3.1±0.1

RB085T-60

Abstract: 367u C100pF
Contextual Info: Schottky barrier diode RB085T-60 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C)

RB085T-40

Contextual Info: RB085T-40 Diodes Schottky barrier diode RB085T-40 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8± 0.2 2.8±0.2 0.1 1.1 7.2 5.0± 0.2 ① 8.0

RB085T-90

Contextual Info: RB085T-90 Diodes Schottky barrier diode RB085T-90 zDmensions Unit : mm zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 13.5MIN 1.2 zConstruction Silicon epitaxial planar 15.0±0.4 0.2 8.0±0.2 12.0±0.2 5.0±0.2

RB085T-90

Contextual Info: RB085T-90 Diodes Schottky barrier diode RB085T-90 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 4.5±0.3 0.1 2.8±0.2 0.1 13.5MIN 1.2 zConstruction Silicon epitaxial planar 15.0±0.4 0.2 8.0±0.2 12.0±0.2

RB085T-90

Abstract: rb085t RB085T90
Contextual Info: RB085T-90 Diodes Schottky barrier diode RB085T-90 zDmensions Unit : mm zApplications Switching power supply zStructure 㪋㪅㪌㫧㪇㪅㪊 䇭䇭䇭㩷㪇㪅㪈 㪉㪅㪏㫧㪇㪅㪉 䇭䇭䇭㩷㪇㪅㪈 㪏㪅㪇㫧㪇㪅㪉 㪈㪉㪅㪇㫧㪇㪅㪉

RB085T-90

Abstract: rb085
Contextual Info: Schottky barrier diode RB085T-90 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 9 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

Contextual Info: REFERENCE 14-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB085T-60 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

Contextual Info: REFERENCE 14-Sep-06 ROHM CO.,LTD Di.Manufacturing Div. SPICE PARAMETER RB085T-40 No. 1 2 3 4 5 6 7 8 9 10 11 12 13 Characteristic of inner diode NAME PARAMETER IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current

Contextual Info: Data Sheet AEC-Q101 Qualified Schottky barrier diode RB085T-60FH Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability Construction Silicon epitaxial planer

Contextual Info: Data Sheet Schottky barrier diode RB085T-90 Applications Switching power supply Dimensions Unit : mm Structure Features 1) Cathode common type. (TO-220) 2) Low IR (1) (2) (3) 3) High reliability 9 Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25°C)

rb085t

Contextual Info: RB085T-90 Diodes Schottky barrier diode RB085T-90 zExternal dimensions Unit : mm zApplications Switching power supply zStructure 9.9 2.2 0.3 0.8 10.0 4.5±0.3 0.1 10.0±0.3 0.1 1.8± 0.2 2.8±0.2 0.1 1.1 7.2 5.0± 0.2 ① 8.0