RAS2 RESISTOR Search Results

TMS4116

Abstract: TMS4132
Contextual Info: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible

4164 64k dram

Abstract: Z41H tms4164 S41128B
Contextual Info: TM S41128B 131,072-BIT DYNAMIC RANDOM-ACCESS MEMORY A PRIL 1985 —R EVISED NOVEM BER 1985 16-PIN PLASTIC DUAL-IN-LINE STACKED PACKAGES t 2 X 6 5 ,5 3 6 X 1 Organization TOP VIEW Single 5-V Supply (10% Tolerance) DC 1 U l 6 Uv s s wc 2 15 3 CA S RAS1C 3

SO DIMM 72-pin

Abstract: DIMM 72 pin out
Contextual Info: 72 Pin SO DIMM Characteristics . Application Note 72 Pin SO DIMM Characteristics Basic Architecture DRAM addressing effects A listing of the 72 Pin SO DIMM Pin Assignments is on page 2. SO DIMMs are designed to provide for a multitude of potential DRAM chip depth granularities as shown in

p77 cac

Abstract: MB85391A-60
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11209-1E MEMORY CMOS 4M x 32 FAST PAGE MODE DRAM MODULE MB85391A-60/-70 CMOS 4M × 32 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85391A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting

MB85396A-70

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11205-1E MEMORY CMOS 4M x 36 FAST PAGE MODE DRAM MODULE MB85396A-60/-70 CMOS 4M × 36 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB85396A is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting

WTS 1.7 IC 28 PIN

Contextual Info: M IC R O N 1 MT12D88C140 1 MEG x 40. 2 MEG x 20 IC DRAM CA R D IC DRAM CARD 4 MEGABYTES 1 MEG x 40, 2 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) MARKING • Timing 60ns access 70ns access 80ns access -6 -7 GENERAL DESCRIPTION The MT12D88C140 is a 4 m egabyte, IC DRAM card

d947

Abstract: hy51v18164b
Contextual Info: • « H Y U N D A I H Y M 5 V 7 2 A 1 2 4 A R - S e r ie s Unbuffered 2M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM5V72A124A is a 2M x 72-bit EDO mode CMOS DRAM module consisting of two HY51V4404B in 20/26 pin SOJ or TSOP-II, four HY51V18164B 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048bit EEPROM on a 168

Contextual Info: ^Ordering number : ENN*6614 CMOS IC LC898023K SAÜŸO, 40x Playback/16x Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions CD-ROM decoder/encoder functions CD decoder/encoder functions Pit and wobble CLV servo CAV audio functions

Contextual Info: MICRON TECHNOLOGY INC SSE D blllSMT OOCmR'ì'ì fiT? • MRN MT8D88C25632 256K x 32, 512K x 16 1C D R AM C A R D MICRON ■ ■ TECHNOLOGY. INC. _ :_ ~r-q 1C DRAM CARD 1 MEGABYTE 256K x 32, 512Kx 16 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC

CRYSTAL 20 mhZ 4 pins

Abstract: a1318 EFMG Electronic micro servo
Contextual Info: Ordering number : ENN*6614 CMOS IC LC898023K 40x Playback/16× Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions “BURN-Proof” stands for Proof against Buffer Under RuN error, not for proof against burning. “BURN-Proof” is a trademark of SANYO Electric Co.,Ltd.

Contextual Info: ^Ordering number : ENN*6494 CMOS 1C _ LC898023 SAfiYO 32x Playback/12x Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions CD-ROM decoder/encoder functions CD decoder/encoder functions Pit and wobble CLV servo

Contextual Info: Ordering number : ENN*6495 CMOS IC LC898093 40x Playback/12× Write CD-R/RW Encoder/Decoder IC with Built-in ATAPI Interface Preliminary Package Dimensions unit: mm 3210-SQFP208 [LC898093] 156 0.5 30.6 28.0 105 104 157 208 53 1 0.5 0.2 0.15 52 (1.25) 3.8max

a13483

Abstract: A1348
Contextual Info: Ordering number : ENN*6614A CMOS IC LC898023KW, 898023KL 40x Playback/16× Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions • • • • • • • • • • CD-ROM decoder/encoder functions CD decoder/encoder functions

ras2 resistor

Contextual Info: Ordering number : ENN*6615A CMOS IC LC898093KW, 898093KL 40x Playback/16× Write CD-R/RW Encoder/Decoder IC with Built-in ATAPI Interface Preliminary Functions • • • • • • • • • CD-ROM decoder/encoder functions CD decoder/encoder functions

Contextual Info: Ordering number : ENN*6494 CMOS IC LC898023 32x Playback/12× Write CD-R/RW Encoder/Decoder IC with Built-in SCSI Interface Preliminary Functions “BURN-Proof” stands for Proof against Buffer Under RuN error, not for proof against burning. “BURN-Proof” is a trademark of SANYO Electric Co.,Ltd.

Contextual Info: • H Y U N D A I H Y M 5 6 4 1 2 4 A R -S e r ie s Unbuffered 1M x 64-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION Tîie HYM564124A is a 1M x 64-bit EDO mode C M O S DRAM module consisting of four HV5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 nF and

Contextual Info: UG54W6646HSL-6 Revision History Datasheet released. U N IG EN C O N FI D EN TI AL Pr el im in ar y Oct 31 , 2002 Rev - A 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788 support@unigen.com Re-Tek- 282_ M5M UG54W6646HSL-6

Contextual Info: Ordering number : ENN *6495 CMOS 1C LC898093 SAfiYO, 40x Playback/12x Write CD-R/RW Encoder/Decoder IC with Built-in ATAPI Interface Preliminary B U R N -P r o o f^ Functions CD-ROM decoder/encoder functions CD decoder/encoder functions Pit and wobble CLV servo

K4F640411CJ

Contextual Info: DRAM MODULE M372C160 8 0CJ(T)0-C Buffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M372C160(8)0CJ(T)0-C DRAM MODULE M372C160(8)0CJ(T)0-C

Contextual Info: DRAM MODULE KMM364C40 8 4CS Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM364C40(8)4CS DRAM MODULE KMM364C40(8)4CS

Contextual Info: DRAM MODULE KMM364C80 8 3CK/CS Buffered 8Mx64 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. KMM364C80(8)3CK/CS DRAM MODULE KMM364C80(8)3CK/CS

80960RD

Abstract: 80960RP GC80960RD66 GC80960RP33 GC80960RP3V33 272918 intel DOC 80960RD66
Contextual Info: i960 RP/RD I/O PROCESSOR SPECIFICATION UPDATE Release Date: April, 1998 Order Number: 272918-017 The i960® RP/RD I/O Processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are documented in this Specification Update.

KM44C1000CJ

Contextual Info: KMM372C122CJ/CT DRAM MODULE KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V FEATURES G EN ERA L D ESC RIPTIO N The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS

Contextual Info: DRAM MODULE KMM364C120CJ/CT KMM364C120CJ/CT Fast Page Mode 1Mx64 DRAM DIMM based on 1M x4,1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C120C is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364C120C consists of sixteen CMOS