RAS 1220 Search Results

jeida dram 88 pin

Contextual Info: IB M 1 1 J 4 3 2 0 C N 4M x 32 3.3V IC DRAM Card Features • Industry Standard 88Pin IC DRAM Card • Performance: Single 3.3V, ± 0.3V Power Supply All inputs buffered except RAS and DATA inputs Multiple RAS inputs for x16 or x32 selectability 12/10 Addressing Row/Column

INTEL 450NX

Abstract: intel 8042 8042 intel kbc intel G31 circuit diagram LXG Series DIODE C04 06 intel 8042 port 64h pciset datasheet transistor w04 450GX
Contextual Info: intel  Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Revision 1.3 March 1999 Intel Corporation 1998, 1999 Information in this document is provided in connection with Intel products. No license, express or

intel 8042

Abstract: 450GX 450NX 82451NX 82452NX 82453NX 82454NX CL-CK L10
Contextual Info: intel  Intel 450NX PCIset 82454NX PCI Expander Bridge PXB 82453NX Data Path Multiplexor (MUX) 82452NX RAS/CAS Generator (RCG) 82451NX Memory & I/O Controller (MIOC) Order Number: 243771-004 June 1998 Intel Corporation 1998 Information in this document is provided in connection with Intel products. No license, express or

Contextual Info: O K I Semiconductor MSM5 12200/1-_ E2C0017-17-42 1,048,576-Word x 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 512200/L is a 1,048,576-word x 2-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM 512200/L achieves high integration, high-speed operation, and low-power

MCM40200

Abstract: Nippon capacitors
Contextual Info: MOTOROLA Order this document by MCM40200/D SEMICONDUCTOR TECHNICAL DATA MCM40200 2M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications The MCM40200 is an 80M dynamic random access memory DRAM module organized as 2,097,152 x 40 bits. The module is a double–sided 72–lead

circular 945

Abstract: TC51 TC514101J
Contextual Info: TOSHIBA MEMORY E lec tr o n ic C o m po n e n t s B u sin ess S e c t o r T C 5 1 4 1 0 1 J/Z -8 0 T C 5 1 4 1 0 1 J/Z -1 0 4 ,1 9 4 ,3 0 4 W O R D X 1 B IT D Y N A M IC RAM DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1

Hitachi DSA00164

Abstract: Nippon capacitors
Contextual Info: HB56D836BR/SBR Series, HB56D436BR/SBR Series 8,388,608-word x 36-bit High Density Dynamic RAM Module 4,194,304-word × 36-bit High Density Dynamic RAM Module ADE-203-729A Z Rev.1.0 Feb. 20, 1997 Description The HB56D836BR/SBR is a 8M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

HB56D836BR/SBR INTERNAL DIAGRAM

Abstract: HB56D436BR HB56D436BR/SBR HB56D836BR Hitachi DSA00166 Nippon capacitors
Contextual Info: HB56D836BR/SBR Series, HB56D436BR/SBR Series 8,388,608-word x 36-bit High Density Dynamic RAM Module 4,194,304-word × 36-bit High Density Dynamic RAM Module ADE-203-729A Z Rev.1.0 Feb. 20, 1997 Description The HB56D836BR/SBR is a 8M × 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

Contextual Info: GMM7402010CS/SG-60/70/80 LG Semicon Co.,Ltd. 2,097,152 WORDS x 40 BIT CMOS DYNAMIC RAM MODULE Features Description The GMM740201OCS/SG is an 2M x 40 bits Dynamic RAM MODULE which is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both

Contextual Info: HM538123 Series 131,072-Word x 8-Bit Multiport CMOS Video RAM • DESCRIPTION HM538123 Series The HM538123 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM and SAM operate independently and asynchronously. It can transfer data between

Contextual Info: H I T A C H I / L O G I C / A R R A Y S / n SIE D 4 4 ^ 5 0 3 o o n s o a HM538123 Series-131,072-Word X 8-Bit Multiport CMOS Video RAM T - HITE 400 4 6 - 2 3 - Z b • DESCRIPTION The HM538123 is a 1-Mbit multiport video RAM equipped with a 128k-word x

193 ec5

Contextual Info: HB56D836BR/SBR Series, HB56D436BR/SBR Series 8,388,608-Word x 36-Bit High-Density Dynamic RAM Module 4,194,304-Word x 36-Bit High-Density Dynamic RAM Module HITACHI ADE-203-729A Z Rev. 1.0 Feb. 20, 1997 Description The HB56D836BR/SBR is an 8 Mbit x 36 dynamic RAM module, mounted in 16 pieces of 16-Mbit

ras 1210

Abstract: ras- 1210
Contextual Info: ADVANCE MT4LC2M8B1 S MEG X 8 DRAM M IC R O N 2 DRAM 2 MEG x 8 DRAM 3.3V FAST PAGE MODE, OPTIONAL SELF REFRESH PIN ASSIGNMENT (Top View) • JEDEC- and industry-standard x8 pinouts, timing, functions and packages • High-performance CM OS silicon-gate process

22jL

Contextual Info: HM538123 Series 131,072-Word x 8-Bit Multiport CMOS Video RAM • DESCRIPTION HM538123 Series The HM538123 is a 1-Mbit multiport video RAM equipped with a 128k-word x 8 -bit dynamic RAM and a 256-word x 8 -bit SAM serial access memory . Its RAM and SAM operate independently and asynchronously. It can transfer data between

Contextual Info: SMART SM5403240U4EUUU Modular Technologies May 22, 1998 128MByte 32M x 40 DRAM Module - 16Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM540324004EUUU SM540324014EUUU SM540324084EUUU SM540324094EUUU Standard

Nippon capacitors

Contextual Info: HB56D836BR/SBR Series, HB56D436BR/SBR Series 8,388,608-word x 36-bit High Density Dynamic RAM Module 4,194,304-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-729A Z Rev. 1.0 Feb. 20,1997 Description The HB56D836BR/SBR is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

Ras 1220

Abstract: TMS417400
Contextual Info: TM497TBM40, TM497TBM40S 4 194 304 BY 40-BIT DYNAMIC RAM MODULE TM893VBM40, TM893VBM40S 8 388 608 BY 40-BIT DYNAMIC RAM MODULE SMMS450-DECEMBER1992 Organization TM497TBM40 . . . 4 194 304 x 40 TM893VBM40 . . . 8 388 608 x 40 V cc Tolerance ±10% Performance Ranges:

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11217-1E MEMORY CMOS 4M x 64 FAST PAGE MODE DRAM MODULE MB8504D064AA-60/-70 CMOS 4M × 64 Bit Fast Page Mode DRAM Module • DESCRIPTION The Fujitsu MB8504D064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module

Nippon capacitors

Contextual Info: HB56D836BR/SBR Series, HB56D436BR/SBR Series 8,388,608-word x 36-bit High Density Dynamic RAM Module 4,194,304-word x 36-bit High Density Dynamic RAM Module HITACHI ADE-203-729A Z Rev.1.0 Feb. 20, 1997 Description The HB56D836BR/SBR is a 8M X 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM

Contextual Info: <§> LG Semicon. Co. LTD. Description Features The GMM7402010DS/SG is an 1M x 40 bits D y n am ic RA M M O D U LE w h ic h is assembled 20 pieces of 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GMM7402010DS/SG is

Contextual Info: IB M 1 1 D 2 4 0 0 B A IB M 1 1 D 2 3 7 0 B A IB M 1 1 E 2 4 0 0 B A IB M 1 1 E 2 3 7 0 B A 2M X 36/2M x 40 D R A M M odules Features Optimized for use in ECC applications High Performance C M O S process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & CM O S

GGG72

Contextual Info: @ LG Semicon. Co. LTD. Description Features The GMM7402010ES/SG is an lM x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces o f 1M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The G M M 7402010ES/SG is

Contextual Info: M IC R O N 1 MEG □RAM _ MODULE m V /U U L iU MT12D136 36, 2 MEG x 18 DRAM MODULE X 1 MEG x 36, 2 MEG x 18 FAST-PAGE-MODE MT12D136 lo w p o w e r, EXTENDED REFRESH (MT12D136 L) FEATURES PIN ASSIG N M EN T (Top View) • Industry-standard pinout in a 72-pin single-in-line

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000AB72F 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-424000AB72F is a 4,194,304 w ords by 72 bits dynam ic RAM m odule on which 18 pieces o f 16 M DRAM: /¿PD4217400 are assembled.