3DD13003(RANGE:30-35)
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JCET Group
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NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A continuous collector current, 1.5W power dissipation, and DC current gain ranging from 8 to 40, suitable for power switching applications.NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A continuous collector current, 1.5W power dissipation, and DC current gain ranging from 8 to 40, suitable for power switching applications. |
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S9015W(RANGE:300-400)
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JCET Group
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S9015W PNP transistor in SOT-323 package with -45V collector-emitter voltage, -100mA collector current, 200mW power dissipation, DC current gain from 200 to 1000, and transition frequency of 150MHz. |
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S9015-TA(RANGE:300-400)
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JCET Group
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PNP transistor in TO-92 package with collector-base breakdown voltage of -50 V, continuous collector current of -0.1 A, collector power dissipation of 450 mW, and DC current gain ranging from 60 to 1000. |
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MMDT9015(RANGE:300-400)
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JCET Group
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PNP transistor MMDT9015 in SOT-363 package with collector-emitter breakdown voltage of -45 V, DC current gain up to 400, transition frequency of 150 MHz, and maximum collector current of -100 mA. |
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SS8550(RANGE:300-400)
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JCET Group
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PNP transistor in SOT-23 package with -25V collector-emitter voltage, -1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for high-current switching applications. |
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S9014-G(RANGE:300-400)
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JCET Group
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NPN transistor in SOT-23 package with 45 V collector-emitter voltage, 100 mA collector current, 200-1000 DC current gain, and 150 MHz transition frequency. |
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2N6520(RANGE:30-200)
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JCET Group
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PNP transistor in TO-92 package with collector-base voltage of -350 V, collector-emitter voltage of -350 V, continuous collector current of -0.5 A, and power dissipation of 625 mW. |
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KTC4377(RANGE:300-450)
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JCET Group
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NPN transistor in SOT-89-3L package with 10V collector-emitter voltage, 2A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 140 to 600. |
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SS8050(RANGE:300-400)
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JCET Group
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NPN transistor in SOT-23 package with 25V collector-emitter voltage, 1.5A collector current, 300mW power dissipation, and DC current gain ranging from 120 to 400, suitable for general-purpose switching and amplification applications. |
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2SC1623(RANGE:300-400)
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JCET Group
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NPN transistor in SOT-23 package with 50V collector-emitter voltage, 100mA continuous collector current, 200mW power dissipation, DC current gain from 90 to 600, and transition frequency of 250MHz. |
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S9015(RANGE:300-400)
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JCET Group
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PNP transistor in SOT-23 package, with maximum collector current of -0.1 A, collector-emitter voltage of -45 V, power dissipation of 0.2 W, and DC current gain ranging from 200 to 1000, suitable for general-purpose switching and amplification applications. |
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S9014W(RANGE:300-400)
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JCET Group
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NPN transistor in SOT-323 package with 45 V collector-emitter voltage, 100 mA collector current, 200 mW power dissipation, and DC current gain ranging from 200 to 1000. |
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2SA812(RANGE:300-400)
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JCET Group
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PNP transistor in SOT-23 package with -50V collector-emitter voltage, -100mA continuous collector current, 200mW power dissipation, and DC current gain ranging from 90 to 600. |
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3DD13003(RANGE:30-35)