BC817-40(RANGE:250-600)
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JCET Group
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NPN transistor in SOT-23 package, with 45 V collector-emitter voltage, 0.5 A continuous collector current, 0.3 W power dissipation, and DC current gain ranging from 100 to 600, suitable for general audio frequency applications. |
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3DD13002B(RANGE:25-30)
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JCET Group
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NPN transistor in TO-92 package, rated for 600 V collector-base voltage, 400 V collector-emitter voltage, 0.8 A continuous collector current, with a transition frequency of 5 MHz and DC current gain ranging from 9 to 40. |
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BCW68(RANGE:250-630)
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JCET Group
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BCW68 PNP transistor in SOT-23 package, with collector-base voltage -60 V, collector-emitter voltage -45 V, emitter-base voltage -5 V, collector current -800 mA, and DC current gain ranging from 100 to 630 depending on rank. |
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BCW66(RANGE:250-630)
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JCET Group
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NPN transistor in SOT-23 package with collector-base voltage of 75 V, collector-emitter voltage of 45 V, collector current of 800 mA, and DC current gain ranging from 100 to 630 depending on variant. |
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BCW66H(RANGE:250-630)
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JCET Group
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NPN transistor in SOT-23 package, with collector-base voltage of 75 V, collector-emitter voltage of 45 V, collector current of 800 mA, and DC current gain divided into F, G, and H groups, featuring transition frequency of 100 MHz. |
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BC337(RANGE:250-630)
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JCET Group
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NPN transistor in TO-92 package with 625 mW power dissipation, featuring VCEO of 45 V for BC337 and 25 V for BC338, IC continuous up to 800 mA, and DC current gain from 100 to 630. |
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BC807-40(RANGE:250-600)
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JCET Group
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BC807 PNP transistor in SOT-23 package, with -50 V collector-base voltage, -45 V collector-emitter voltage, -0.5 A continuous collector current, 0.3 W power dissipation, and DC current gain ranging from 100 to 600. |
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3DD13003(RANGE:25-30)
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JCET Group
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NPN transistor in TO-126 package with 400V collector-emitter voltage, 1.5A continuous collector current, 1.5W power dissipation, and DC current gain ranging from 8 to 40, suitable for power switching applications. |
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BC817-40(RANGE:250-600)
