MMBT5551-G(RANGE:200-300)
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JCET Group
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MMBT5551 NPN transistor in SOT-23 package, rated for 160V collector-emitter voltage, 600mA collector current, with 300mW power dissipation and DC current gain ranging from 100 to 300 at 5V VCE. |
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S9014-TA(RANGE:200-600)
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JCET Group
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S9014 NPN transistor in TO-92 package with 45 V collector-emitter voltage, 0.45 W power dissipation, DC current gain from 60 to 1000, and transition frequency of 150 MHz at 10 mA collector current. |
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KTA1504(RANGE:200-400)
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JCET Group
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PNP transistor in SOT-23 package with -50 V collector-base and collector-emitter voltage, -150 mA collector current, 150 mW power dissipation, 70–400 DC current gain, and 80 MHz transition frequency. |
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D882(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-89-3L package with 30V collector-emitter voltage, 3A continuous collector current, 0.5W power dissipation, and DC current gain ranging from 60 to 400, suitable for general-purpose switching and amplification applications. |
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BC848B(RANGE:200-450)
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JCET Group
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NPN transistor in SOT-23 package, part of the BC846/BC847/BC848 series, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800, suitable for switching and audio frequency amplifier applications. |
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BC847(RANGE:200-450)
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JCET Group
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NPN transistor in SOT-23 package, suited for switching and audio frequency amplifier applications, with collector current up to 100 mA, collector-emitter voltage from 30 to 65 V, and DC current gain up to 800. |
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BC547-TA(RANGE:200-450)
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JCET Group
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NPN transistors BC546, BC547, and BC548 in TO-92 package with high voltage ratings, featuring VCEO up to 65V, IC continuous 100mA, hFE from 110 to 800, and fT up to 150MHz. |
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C1815(RANGE:200-400)
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JCET Group
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NPN transistor in SOT-23 package with 50V collector-emitter voltage, 150mA continuous collector current, 200mW power dissipation, and DC current gain ranging from 130 to 400. |
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2SC4944(RANGE:200-400)
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JCET Group
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Dual NPN transistor in SOT-353 package with 60V collector-base voltage, 150mA continuous collector current, 200mW power dissipation, and DC current gain range of 120 to 400. |
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2N3904-TA(RANGE:200-300)
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JCET Group
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NPN silicon epitaxial planar transistor in TO-92 package, rated for 40V collector-emitter voltage, 0.2A continuous collector current, with DC current gain up to 400 and transition frequency of 300MHz. |
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S8550 2TY(RANGE:200-350)
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JCET Group
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PNP transistor in SOT-23 package, rated for collector current of -0.5A, collector-emitter voltage of -25V, with DC current gain up to 400 and transition frequency of 150MHz. |
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SS8550(RANGE:200-350)
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JCET Group
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SS8550 PNP transistor in SOT-23 package with -40V collector-base voltage, -25V collector-emitter voltage, -1.5A collector current, 500mW power dissipation, and DC current gain ranging from 120 to 400. |
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2SC1008(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package, rated for 60 V collector-emitter voltage, 700 mA collector current, with a DC current gain ranging from 40 to 400 and a transition frequency of 30 MHz. |
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S9013-G(RANGE:200-350)
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JCET Group
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NPN transistor in SOT-23 package with 500 mA collector current, 25 V collector-emitter voltage, 300 mW power dissipation, and DC current gain ranging from 120 to 400 depending on rank. |
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MPS2222A-TA(RANGE:200-300)
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JCET Group
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NPN transistor in TO-92 package with 40 V collector-emitter voltage, 75 V collector-base voltage, 0.6 A continuous collector current, and 625 mW power dissipation, featuring a DC current gain (hFE) of 100 to 300. |
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D882S-TA(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package with collector-base voltage of 40 V, collector-emitter voltage of 30 V, emitter-base voltage of 6 V, continuous collector current of 3 A, and collector power dissipation of 625 mW. |
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B772M(RANGE:200-400)
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JCET Group
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PNP transistor in TO-252-2L plastic package with -30V collector-emitter voltage, -3A continuous collector current, 1.25W power dissipation, and DC current gain ranging from 60 to 400. |
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BC857S(RANGE:200-450)
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JCET Group
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BC857S is a dual PNP transistor in SOT-363 package with 45 V collector-emitter breakdown voltage, 200 MHz transition frequency, and DC current gain up to 630, designed for compact circuit applications. |
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KTC3198(RANGE:200-400)
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JCET Group
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NPN transistor in TO-92 package, rated for 60 V collector-base breakdown voltage, 50 V collector-emitter voltage, 150 mA continuous collector current, with a transition frequency of 80 MHz and DC current gain up to 700. |
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BC546(RANGE:200-450)
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JCET Group
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NPN transistor in TO-92 package with high voltage capability, available in BC546, BC547, and BC548 variants, featuring collector current up to 0.1 A, power dissipation of 625 mW, and DC current gain from 110 to 800. |
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MMBT5551-G(RANGE:200-300)
