RAM 64K 8KX8 Search Results

Contextual Info: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN

EDI8808CB

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.

EDI8808CB

Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
Contextual Info: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow

A3738

Abstract: CA1023 8kx8 sram
Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns

Contextual Info: Tekmos TK89C668 Microcontroller DS015 V1.3 January 30, 2013 Product Overview Features 64K Flash, 8K RAM, TWI General Description The TK89C668 is based on the 8051microcontroller architecture. With 64Kx8 of Flash memory and 8Kx8 of internal RAM, these parts are

28C64A-15

Abstract: 28C64A ic 8870 ttl
Contextual Info: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the

26R2-5

Contextual Info: m EDI8808CA35/45/55ÏÏ0 o \ High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power CMOS Static RAM organized as 8192 words by 8 bits each. In addition to 13 address inputs, and 8 common

Contextual Info: ^EDI EDI8808CA35/45/55/70 High Speed 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CA is a high performance, low power 64Kbit CMOS Static CMOS Static RAM organized as 8192 words by 8 bits Random Access Memory • Access Times 35,45,55, and 70ns

Contextual Info: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without

FM16W08

Abstract: FM1608B FM1608 FM1608-120-PG MS-013 FM1608-120-SG SRAM 8KX8
Contextual Info: FM1608 64Kb Bytewide F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

4Kx4

Contextual Info: Typical DC & AC Characteristics 1 6 K & 6 4 K Static RAMs The following Figures 1 through 8 represent typical DC and AC characteristic curves for the 16K and 64K static RAM products listed below: 16K Static R A M s 64K Static RA M s L7C167 L7C168 L7C170 L7C171

FM1608

Abstract: FM1608-120-PG MS-013 FM1608-120-S
Contextual Info: FM1608 64Kb Bytewide F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow

Contextual Info: B EH EDH8808ACL 8 5 /1 0 /1 2 /1 5 /2 0 Monolithic The fu tu re . . . today. 8Kx8 Static RAM CMOS, Low Power Monolithic Features 64K bit CMOS Static RAM Organized as 8,192 x8 Bits • Access Times of 85,100, j l 20,150 and 200ns • E and G Functions for Bus Control

FM1608

Abstract: FM1608-120-P FM1608-120-S
Contextual Info: FM1608 R aM TR O N 64Kb Bytewide F RAM Memory Features SRAM & EEPROM Compatible 64K bit Ferroelectric Nonvolatile RAM • • Organized as 8,192 x 8 bits • High endurance 10 Billion 10 10 read/writes • 10 year data retention at 85° C • NoDelay write

soj28 sop28

Abstract: W24258S SOP28 32KX8 SOJ28 W2465S-70LL
Contextual Info: L O W P O W E R C M O S S TAT I C R A M W24 SERIES • 64K TO 1M LOW POWER STATIC RAM’S WITH STANDBY CURRENTS AS LOW AS 5µA • 256K TO 1M HIGH SPEED STATIC RAM’S WITH ACCESS TIMES AS LOW AS 12ns LOW POWER CMOS STATIC RAM SPECIFICATIONS Part Number W2465S-70LL

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

Contextual Info: im Advance Information 64K XM20C64 8Kx8 High Speed AUTOSTORE NOVRAM FEATURES DESCRIPTION • • • • The XM20C64 is a high speed nonvolatile RAM Module. It is comprised of four Xicor X20C16 high speed NOVRAMs, a high speed “ACT” decoder and decoupling

Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1608-120-SG

Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1608-120-SG

Abstract: fm1608-120-pg FM1608 MS-013 M071 FM1608-120SG fm1608-120pg
Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 45 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

FM1608

Abstract: FM1608-120-P FM1608-120-S MS-011 MS-013
Contextual Info: FM1608 64Kb Bytewide FRAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 10 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process

HC6364

Abstract: IH00 Honeywell sram 8Kx8
Contextual Info: HONEYWELL/S S E C 15E D | MSS1Ô72 0000433 3 | Honeywell HC6464 Military Products T - 4 d-2 5 -0 5 ' 64K x 1 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 jim Process • Similar Characteristics to HC6364 - 8Kx8 SRAM