RAM 6164 Search Results

Contextual Info: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits

Contextual Info: ^ EXUKDTT [PIRilMlG inte* 87C196KT/87C196KS 20 MHz ADVANCED 16-BIT CHMOS MICROCONTROLLER Automotive —40°C to + 125°C Ambient High Performance CHMOS 16-Bit CPU Up to 32 Kbytes of On-Chip EPROM Up to 1 Kbyte of On-Chip Register RAM Up to 512 Bytes of Additional RAM

CERAMIC FLATPACK

Abstract: 6165A OM21 EE320 6164B al126 BH75
Contextual Info: N E C ELECTRONICS INC blE ]> • b42752S DD3S34E 7TG H N E C E fiPB10A484 4,096 X 4-Blt 10K ECL RAM NEC Electronics Inc. Description Pin Configurations The J&PB10A484 is a very high-speed 10K interface ECL RAM organized as 4,096 words by 4 bits with nonin­

d424100

Abstract: 83IH-5695B
Contextual Info: f/PD424100 4,194,304 X 1-Bit Dynamic CMOS RAM W Mid W NEC Electronics Inc. D escription Pin C o n fig uratio n s T h e ¡j P D424100 is a fast-page dynamic RAM organized as 4,194,304 words by 1 bit and designed to operate from a single + 5-volt power supply. Advanced polycide

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

ADC04

Abstract: 24x4 lcd command ADC-03 ST Microelectronics AN 2316 15 pin LCD module SI002 HS ADC82 ADC82AD
Contextual Info: MICR0ELECTR0NICS XL24204 Series 4 -B it M icroco n tro ller OVERVIEW KEY FEATURES Low -voltage, single pow er source V dd = 2 . 0 -5 .5 V M em ory — X L 2 4 2 0 4 :20 48 X 8 b its R O M ; 128 X 4 bits RAM — X L 2 4 4 0 4 :4 0 9 6 X 8 b its R O M ; 256 X 4 bits RAM

KM684002J

Abstract: M68400 KM6164002
Contextual Info: KM 6164002/L CM OS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.) (CMOS) : 10mA (Max.) L-Ver : 500//A (Max) Operating : KM6164002-20 : 250mA (Max.)

SRAM sheet samsung

Contextual Info: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark

Contextual Info: Preliminary KM6164002C/CL, KM6164002CI/CLI CMOS SRAMI Document Title 256Kx16 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Rev. 0.0 Initial release with Preliminary.

SRAM256KX16

Abstract: SRAM_256KX16
Contextual Info: ADVANCED CM OS SRAM KM 6164000AL/AL-L 256K x16 B it CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 55, 70, 85ns Max. • Low Power Dissipation Standby (CMOS) : 500,«W(Typ.) L-Version 5,MW(Typ.) LL-Version Operating : 165mW(max.) • Single 5 ± 1 0 % V power supply

Contextual Info: KM6164002B, KM6164002BI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target

Contextual Info: KM6164002A, KM6164002AE, KM6164002AI CMOS SRAM Document Title 256Kx16 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996

Contextual Info: KM6164002B, KM6164002BI CMOS SRAM Document Tills 256Kx16 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

altl

Contextual Info: Advanced CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. The KM6164000AL/AL-L is a 4,194,304-bit high speed • Low Power Dissipation Static Random Access Memory organized as 262,144

Contextual Info: Datasheet Standard LCD Segment Driver BU9799KV MAX 200 segments SEG50xCOM4 ●Features „ Integrated RAM for display data (DDRAM): 50 x 4 bit (Max 200 Segment) „ LCD drive output : 4 Common output, 50 Segment output „ Integrated Buffer AMP for LCD driving

Contextual Info: Datasheet Standard LCD Segment Driver BU9799KV MAX 200 segments SEG50xCOM4 Features ̈ Integrated RAM for display data (DDRAM): 50 x 4 bit (Max 200 Segment) ̈ LCD drive output : 4 Common output, 50 Segment output ̈ Integrated Buffer AMP for LCD driving

Contextual Info: MICROELECTRONICS Exc»Mine* in 6* XL24E805 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VD D -2.5~5.5V 8192 bytes ROM 256 x 4 bits general-purpose RAM

Contextual Info: Preliminary KM6164002A CMOS SRAM 256Kx 16 Biit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA(Max.) (C M O S): 10 mA(Max.) Operating KM6164002A-12 : 260 mA(Max.)

3088

Abstract: 4 line lcd BU9799
Contextual Info: BU9799KV Datasheet Standard LCD Segment Driver BU9799KV MAX 200 segments SEG50xCOM4 ●Features „ Integrated RAM for display data (DDRAM): 50 x 4 bit (Max 200 Segment) „ LCD drive output : 4 Common output, 50 Segment output „ Integrated Buffer AMP for LCD driving

26BH

Abstract: STP03 STK 4144 application circuit SI002
Contextual Info: MICROELECTRONICS \_ J * Ê £re*//*nc* XL24E410 iflE* 4-Bit Microcontroller Emulator KEY FEATURES OVERVIEW • Low voltage, single power source V d d - 2.3 -5.5V ■ Memory — E2PROM for program (max.): 8192 x 8 bits — General-purpose RAM : 256 x 4 bits

2114 Ram pinout 18

Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Contextual Info: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in

Contextual Info: a Advanced Micro Devices 674219 FIFO RAM Controller Ordering Information Features/ Benefits • High-speed, no fall-through time • Deep FIFOs—16-bit SRAM address Part Number Pins Type Temperature 674219 40 CD 040 Com • Arbitration read/write • Control signals lor data latching

Contextual Info: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple