RAM 2112 Search Results

NT7502H-TABF1

Abstract: NT7502 65-line
Contextual Info: NT7502 65 X 132 RAM-Map LCD Controller / Driver Features ! Direct RAM data display using the display RAM. When RAM data bit is 0, it is not displayed. When RAM data bit is 1, it is displayed. At normal display ! RAM capacity: 65 X 132 = 8580 bits ! Many command functions: Read/Write Display Data.

Contextual Info: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static

M881C4256-70

Abstract: M881C4256 ym 2121 4256-12 2117 RAM
Contextual Info: December 1989 Edition 1.2 FUJITSU DATA SHEET MB81C4256-70/-80/-10/-12 CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 262,144 x 4 BIT Fast Page Mode DYNAMIC RAM The Fujitsu MBS 1C4256 is CMOS fully decoded dynamic RAM organized as 262,144 words x 4 bits.

e 3055 t

Contextual Info: RW1092 Dot Matrix Type LCD Controller FEATURES Direct display of RAM data through the display data RAM. RAM capacity：192 x 97 = 18624bits Display duty selectable by hardware 1/97 duty： 97common x 160segment 1/65 duty： 65common x 192segment 1/33 duty： 33common x 192segment

ST7565

Abstract: LCD Controller ST7567 1117 ADC Sitronix ST7565 st7565 initial code ME 1117 ST7567 controller ST7565-0A 1117 regulator
Contextual Info: ST Sitronix ST7565 65 x 132 Dot Matrix LCD Controller/Driver FEATURES Direct display of RAM data through the display data RAM. RAM capacity : 65 x 132 = 8580 bits Application Display driver circuits 1/65 duty : 65 common x 132 segment 1/49 duty : 49 common x 132 segment

2112A-2

Contextual Info: in te i 2112A 256 X 4 BIT STATIC RAM 250 ns Max. 350 ns Max. 450 ns Max. RAM 2112A-2 2112A 2112A-4 Fully Decoded: On Chip Address Decode Single +5VjSupply Voltage Directly TTL Compatible: All Inputs and Outputs Inputs Protected: AM Inputs Have Pro­ tection Against Static Charge

IC JRC 2112

Abstract: LT 9228 ST8002B 5922D jrc 2112 st8108 ST8002 2112 jrc 5922e
Contextual Info: APR a 2 1993 SGS-THOMSON S i, ST8002 m 2K ROM HCMOS MICROCONTROLLER ADVANCED DATA HARDW ARE • HCM O S TECHNOLOGY. ■ 8 BIT CORE & ARCHITECTURE. ■ POWER SAVING WAIT, HALT AND RAM RETENTION MODES. ■ 2112 BYTES O F USER RQM. ■ 128 BYTES O F RAM. ■ 20 BI-DIRECTIONNAL I/O LINES.

sram 2112

Abstract: 2114 static ram STATIC RAM 2114
Contextual Info: S-22S10R/I 64-word X4-bit parallel NON-VOLATILE RAM The S-22S10R/I is a non-volatile CM OS RAM, co m p o se d of a CM OS static RAM and a non-volatile e le ctrically erasable p ro gram m ab le m em ory E2PROM to backup the SRAM. The organization is 64-w ord x 4-bit (total 256 bits) and the

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

Contextual Info: Preliminary KM4132G271 CMOS SGRAM 128K x 32 x 2Bit Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply The KM4132G271 is 8,388,608 bits synchronous high data • LVTTL com patible with multiplexed address rate Dynamic RAM organized as 2 x 131,072 words by 32

RAM 2112 256 word

Abstract: M5L2112AP
Contextual Info: MITSUBISHI LSIs M 5L 2112A P, S; P-2, S-2; P-4, S-4 1024-BIT 256-WORD BY 4-BIT STATIC RAM DESCRIPTION This is a fa m ily o f 2 5 6 -w o rd by 4 -b it sta tic RAM s fa b ri­ cated w ith th e N-channel silicon-gate M.OS process and designed fo r sim ple interfacing.

2102 SRAM

Abstract: 2112 sram seiko epson RAM IC MEMORY CARD
Contextual Info: STATIC RAM O U TLIN E The SRAM IC MEMORY CARD series is made up of Static RAM chips. Memory capacity is from 64K Bytes to 1M Bytes. HE series is 16 bit wide data bus. This series featuresa built-in exchangeable battery and a mechanical write protect switch to protect

MB81C1001-12

Abstract: MB81C1001-10 81C100 81c1001 MB81C1001 MB81C1001-70 MB81C1001-80 EI96
Contextual Info: February 1990 Edition 3.0 FUJITSU MB81C100 1 -70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe

MB8101

Abstract: MB81C1001-10 RBS 2106 equivalent RBS 2107
Contextual Info: February 1990 Edition 3.0 FUJITSU DATA SHEET MB81C1001-70/-80/-10/-12 CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM The Fujitsu MB81C1001 is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1001 has been designed for mainframe

am2022

Abstract: am22 full adder circuit using xor and nand gates AM2031 AM2024 AM2051 t950 half adder circuit using nor and nand gates ax253 AM290
Contextual Info: Am 3525 Mask-Programmable Gate Array With ECL RAM PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Up to 3718 equivalent gates - 416 internal cells - Up to 135 l/O s 1152 bits of ECL RAM 1K with byte-wide parity - Worst case T a a (access time) = 5.5 ns High-performance, low-power ECL gates

Contextual Info: 8K x 8 CMOS Cache-Tag Static RAM FEATURES □ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic □ High Speed Address-to-MATCH — 12 ns maximum □ High Speed Flash Clear □ High Speed Read Access Time — to 12 ns maximum □ Auto-Powerdown Design

Contextual Info: CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional D escription • Automatic power-down when dese­ lected (CY7C168A The CY7C168A and CY7C169A are highperform ance CM OS static RAM s orga­ nized as 4096 by 4 bits. Easy memory ex­

NT7525

Abstract: NT7525 driver LCD Controller, Novatek Novatek ps5 1020 Novatek FRC sk 8085 PWM op amp ua 743 Novatek driver ic SM 5164
Contextual Info: NT7525 132RGB X 132 RAM-Map STN LCD Controller/Driver for 65K Colors V1.0 NT7525 Revision Features .4

32 pin dot matrix lcd 94v

Abstract: 462 transistor 48X84 NT7531
Contextual Info: NT7531 48X84 RAM-Map STN LCD Controller/Driver Ver. 1.0 1 V1.0 NT7531 1 REVISION HISTORY .3 2 FEATURES .4

Contextual Info: V'TS’.T'SWf LS's M5M44258BP,J,L-7-»,H0 STATIC COLUMN MODE 1 0 4 8 S 7 6 -B IT 2 6 2 1 4 4 -W O R D B Y 4-BIT DYNAM IC RAM D ESC R IP T IO N This is a fam ily of 262144-word by 4-bit dynam ic RAM s, fabricated with the high performance CM OS process, and

2112A-4

Abstract: 2112A 2112A-2 2112A intel A6az 20/2112A-4
Contextual Info: iny 2112A 2 5 6 X 4 BIT STATIC RAM 2112A -2 2112A 2112A -4 250 ns Max. 350 ns Max. 450 ns Max. Fully Decoded: On Chip Address Decode Inputs Protected: All Inputs Have Pro­ tection Against Static Charge Single +5VjSupply Voltage Directly TT L Com patible: All Inputs and

ds39026

Abstract: PIC16CXX PIC18C242 PIC18C252 PIC18C442 PIC18C452 PIC18CXX2 PIC16C7X CS-7 thermistor MPLAB-C18 keypad
Contextual Info: PIC18CXX2 High-Performance Microcontrollers with 10-Bit A/D High Performance RISC CPU: Device PIC18C242 * DIP, Windowed CERDIP On-Chip Program Memory On-Chip RAM EPROM # Single Word bytes (bytes) Instructions 16K 8192 512 PIC18C252 32K 16384 1536 PIC18C442

24cxx eeprom programmer circuit diagram

Abstract: PIC18CXX2 RS-485 to usart pic interface circuit pic16f877 full instruction set fuzzy logic library pic c code keeloq decode Transponder ID 48 RC5 DECODER PIC16F877 pp d115 marking cod A2
Contextual Info: PIC18CXX2 High-Performance Microcontrollers with 10-Bit A/D High Performance RISC CPU: Device PIC18C242 * DIP, Windowed CERDIP On-Chip Program Memory On-Chip RAM EPROM # Single Word bytes (bytes) Instructions 16K 8192 512 PIC18C252 32K 16384 1536 PIC18C442

MECL 10000

Abstract: MCM6830A transistor bf 175 MCM6605AL1 c3460 equivalent MCM6810A mcm6616
Contextual Info: GENERAL INFORMATION 1 RANDOM ACCESS MEMORIES RAM 2 READ ONLY MEMORIES (ROM) 3 M6800 SYSTEM MEMORIES APPLICATION NOTES 5 RELIABILITY INFORMATION 6 MEMORY INTERFACE i Volume 7 / Series A prepared by Technical Information Center Semiconductor Data Library MOS MEMORIES