RADAR CIRCUIT Search Results
RADAR CIRCUIT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TLC32044IN | Rochester Electronics LLC | TLC32044 - Voice-Band Analog Interface Circuits |
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| TLC32044EFN | Rochester Electronics LLC | TLC32044 - Voice-Band Analog Interface Circuits |
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| TLC32044IFK | Rochester Electronics LLC | TLC32044 - Voice-Band Analog Interface Circuits |
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| 54F193/BEA | Rochester Electronics LLC | 54F193/BEA - Dual marked (M38510/34304BEA) |
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| PEF24628EV1X | Rochester Electronics LLC | PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip |
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RADAR CIRCUIT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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radar 77 ghzContextual Info: Analog, Mixed Signal and Power Management MRD2001 77 GHz Radar Transceiver Chipset High-resolution 77 GHz radar voltage-controlled oscillator VCO , receiver, transmitter chipset Target Applications Overview • Long-range radar (LRR), mid-range radar (MRR) and short-range radar |
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mrd2001mrd2001fsradar 77 ghz | |
MICROWAVE ASSOCIATES
Abstract: Design of H.F. Wideband Power Transformers varian klystron 10 GHz gunn diode double balanced mixer RHG melabs circulator radar gunn diode Gunn Diode gunn diode varian design of multi section coupler
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1960smicrowave associatesdesign of h.f. wideband power transformersvarian klystron+7 | |
radar sensor
Abstract: microwave RADAR motion sensors RADAR-IPM-165
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radar-ipm-165d-78166radar sensormicrowave radar motion sensors | |
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Contextual Info: Part Number: Integra IB1214M375 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor The high power pulsed radar transistor device part number IB1214M375 is designed for L-Band radar systems operating over the instantaneous bandwidth of |
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ib1214m375ib1214m375-rev-pr1-ds-rev-nc | |
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Contextual Info: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over |
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ib2731mh110ib2731mh110-rev-nc-ds-rev-b | |
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Contextual Info: Integra Part Number: IBP2729MH300 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2729MH300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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ibp2729mh300ibp2729mh300-rev-nc-ds-rev-a | |
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Contextual Info: Part Number: Integra IB1214M32 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M32 is designed for L-Band radar systems operating over |
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ib1214m32ib1214m32-rev-nc-ds-rev-b | |
IBP2731M200Contextual Info: Part Number: Integra IBP2731M200 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP2731M200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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ibp2731m200ibp2731m200-rev-nc-ds-rev-b | |
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Contextual Info: Part Number: Integra IB1214M150 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB1214M150 is designed for L-Band radar systems operating |
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ib1214m150ib1214m150-rev-nc-ds-rev-a | |
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Contextual Info: Part Number: Integra IB2226M160 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226M160 is designed for S-Band radar systems operating |
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ib2226m160ib2226m2160ib2226m160-rev-pr1-ds-rev-nc | |
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Contextual Info: Part Number: IBP3135MH200 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3135MH200 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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ibp3135mh200ibp3135mh200-rev-pr1-ds-rev-nc | |
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Contextual Info: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high fT L-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over |
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ib1214m55ib1214m55-rev-nc-ds-rev-c | |
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Contextual Info: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating |
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ib0810m50ib0810m50-rev-nc-ds-rev-a | |
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Contextual Info: Part Number: Integra IBP3134M220 TECHNOLOGIES, INC. S-Band Radar Pallet Silicon Bipolar − Ultra-high fT Part number IBP3134M220 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth |
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ibp3134m220ibp3134m220-rev-nc-ds-rev-nc | |
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RD-301A
Abstract: Magnetron pulse width 20 ns magnetron ns radar front end radar 77 ghz receiver HETERODYNE WAVE METER CIRCUITS transmitter calibration certificate RD301
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02/dec/2004rd-301amagnetron pulse width 20 nsmagnetron ns+5 | |
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Contextual Info: Part Number: Integra IB3135MH65 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high f T S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH65 is designed for S-Band radar systems operating over the |
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ib3135mh65ib3135mh65-rev-nc-ds-rev-nc | |
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Contextual Info: Part Number: Integra IBP3135M150 TECHNOLOGIES, INC. S-Band Radar Pallet Amplifier Silicon Bipolar Technology − Ultra-high fT Class C Operation − High Efficiency Part number IBP3135M150 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems |
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ibp3135m150ibp3135m150-rev-nc-ds-rev-nc | |
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Contextual Info: Part Number: Integra IB2934M100 Preliminary TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2934M100 is designed for S-Band radar systems operating over |
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ib2934m100ib2934m100-rev-pr1-ds-rev-nc | |
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Contextual Info: Part Number: Integra IB2226MH15 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2226MH15 is designed for S-Band radar systems operating over the |
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ib2226mh15ib2226mh15-rev-nc-ds-rev-nc | |
HETERODYNE WAVE METER CIRCUITS
Abstract: RD301 transmitter calibration certificate RD301A radar level transmitter magnetron ns radar radar detector receiver magnetron ns radar datasheet Magnetron pulse width 20 ns power supply for magnetron
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rd-301aheterodyne wave meter circuitsrd301transmitter calibration certificate+7 | |
oscilloscope
Abstract: radar tube oszilloskope
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OCR Scan |
db16-22dg16-22dp16-22oscilloscope+2 | |
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Contextual Info: Part Number: Integra IB3135MH75 TECHNOLOGIES, INC. Silicon Bipolar Ultra-high f T S-Band Radar Transistor Class C Operation High Efficiency The high power pulsed radar transistor device part number IB3135MH75 is designed for S-Band radar systems operating over the |
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ib3135mh75ib3135mh75-rev-nc-ds-rev-a | |
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Contextual Info: Part Number: Integra IB450S500 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT UHF Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB450S500 is designed for UHF radar systems operating at 450 MHz. While operating |
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ib450s500ib450s500-rev-nc-ds-rev-c | |
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Contextual Info: Part Number: Integra IB2931MH55 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2931MH55 is designed for S-Band radar systems operating over the |
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ib2931mh55ib2931mh55-rev-nc-ds-rev-nc | |