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Catalog Datasheet	Type	Document Tags	PDF
transistor Common Base configuration Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. 12 Watt L-Band Radar Transistor Frequency : Output Power : Power Gain : Efficiency : Output VSWR : Pulse Width : Duty Factor : Collector Voltage : Driver Transistor Use as driver transistor IB0810M50. for Bandwidth	Original	ib0810m12 ib0810m50 ib0810m12-sf-rev-nc transistor common base configuration +5f 0952 radar circuit component transistor common collector configuration ballast 300 watt transistor data book	PDF
Contextual Info: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating	Original	ib0810m50 ib0810m50-rev-nc-ds-rev-a	PDF

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transistor Common Base configuration

Abstract: IB0810M50 IB0810M12 f 0952 radar circuit component transistor Common collector configuration ballast 300 watt Transistor Data Book
Contextual Info: Part Number: Integra IB0810M12 TECHNOLOGIES, INC. 12 Watt L-Band Radar Transistor Frequency : Output Power : Power Gain : Efficiency : Output VSWR : Pulse Width : Duty Factor : Collector Voltage : Driver Transistor Use as driver transistor IB0810M50. for Bandwidth

Original

ib0810m12 ib0810m50 ib0810m12-sf-rev-nc transistor common base configuration +5

PDF

Contextual Info: Part Number: Integra IB0810M50 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB0810M50 is designed for L-Band radar systems operating

Original

ib0810m50 ib0810m50-rev-nc-ds-rev-a

PDF