RA10 Search Results

20RA10

Abstract: 20RA10-15 PLDC20RA10 PLDC20RA10-15JC RA1021
Contextual Info: fax id: 6015 1P LDC20 RA10 RA10 Reprogrammable Asynchronous CMOS Logic Device Features • • • • • • • • • — ICC max = 85 mA Military • High reliability — Proven EPROM technology Advanced-user programmable macrocell CMOS EPROM technology for reprogrammability

Contextual Info: ¿ n• ^ E G & G R E T ÌC O N RA1024J Full Frame CCD Imager General Description SGA VOGA The RA1024J is a full frame CCD sensor designed specifi­ cally for use in astronomy, spectroscopy and related scien­ tific imaging applications. Its combination of very low noise

ra-100

Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RA1000-3.5L The RF Line UHF P o w er T ran sistor 10 dB TO 1000 M H z 3.5 WATTS BROADBAND UHF POWER TRANSISTOR . . . designed p rim a rily fo r w id e b an d , large-signal o u tp u t and d riv e r a m p lifie r stages to

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RA10 0 0 -1 4 L The RF Line U H F P o w er Transistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1000 MHz. • Designed for Class A Linear Power Amplifiers • Specified 19 Volt, 1000 MHz Characteristics:

RC104C

Abstract: RA104C
Contextual Info: Ordering number:EN4764 PNP/NPN Epitaxial Planar Silicon Transistors RA104C/RC104C Switching Applications with Bias Resistances Applications Package Dimensions • Switching circuits, inverter circuits, interface circuits, driver circuits. unit:mm 2018B 0.4

Contextual Info: Preliminary J ^ E B e B R E T IC O N Real Time CC^Imager General Description The RA1000J is a full frame CCD sensor designed specifically for real time photographic, and high contrast imaging applica­ tions. Its combination of real time readout with 1000 times

RA101C

Abstract: RC101C
Contextual Info: Ordering number:EN4775 PNP/NPN Epitaxial Planar Silicon Transistors RA101C/RC101C Switching Applications with Bias Resistances Features Package Dimensions • On-chip bias resistances (R1=47kΩ, R2=47kΩ). · Compact package (CP). unit:mm 2018B 0.4 3 0.5

RC101C

Abstract: 47751 RA101C
Contextual Info: Ordering number:EN4775 PNP/NPN Epitaxial Planar Silicon Transistors RA101C/RC101C Switching Applications with Bias Resistances Features Package Dimensions • On-chip bias resistances (R1=47kΩ, R2=47kΩ). · Compact package (CP). unit:mm 2018B 0.4 3 0.5

a101 npn

Abstract: A101 C101 RA101S RC101S A101 PNP
Contextual Info: Ordering number:EN4776 PNP/NPN Epitaxial Planar Silicon Transistors RA101S/RC101S Switching Applications with Bias Resistances Features Package Dimensions • On-chip bias resistances (R1=47kΩ, R2=47kΩ). · Compact package (SPA). unit:mm 2033A [RA101S/RC101S]

SN62 Ra10 BAS 86

Abstract: Sn62RA10BAS86 SN62 sn62ra10 AANG multicore RA-10
Contextual Info: VARUINFORMATIONSBLAD M ULTICORE SOLDERS A Div isio n o f H e nke l Lo c t it e Adhesiv e s Limit e d Kelsey House • Wood Lane End Hemel Hempstead • Hertfordshire HP2 4RQ • UK Sn62 RA10 BAS 86 Lodpasta RA10BAS86 1.00 SE 03.12.02 Detta varuinformationsblad har tagits fram i enlighet med EU-direktiv 1999/45/EC och ger

tlpn

Abstract: RA100A 38240 vacuum tube 80 TESLA 1 RA100 tesla vacuum tube bridge vacuum tube rectifier 16320
Contextual Info: KeH orpoH R e ctifyin g vacuum diode H ochvakuum -G leichrichterdiode RA100A - nPHMEHEHHE JIaMna TECJIA RA100A HBjiaeTCfj KeHOTpoHOM c o ä h h m aH o so M , n p e a H a 3H a ie H HbiM a n a B b in p H M H Tejieä B b ico K o ro H a n p a aceHHH nepeM eH H oro TOKa.

Contextual Info: mikromedia for PIC32 pinout 5V power supply Analog Lines Interrupt Lines Digital I/O lines SCK2 SPI2 SDI2 SDO2 3.3V power supply Reference Ground VSYS GND RB0 RB1 RB2 RB3 RB4 RB5 RB14 RE8 RE9 RA14 RA15 RA10 RC4 RB6 RB7 RF3 RG12 RG13 RG14 RG6 RG7 RG8 3.3V

mil-r-19

Abstract: RA10NASD RA10-N-A-S-D-10-2-A raio RA-10 RA-10n 4-32-NEF-2A RA10LASM
Contextual Info: S e rie s 49, 49M /RA10 Electrical Specificatio ns Resistance Range 15Q to 2.5KÎÎ linear for Series 49; 3£2 to 2.5KQ linear for Series 49M/RA10. Resistance Tolerance ±5% for 49 and 49M; ±10% for RA10 Power Rating 1.5 watts @ 40°C, or .005 watt per degree of effective

Contextual Info: DHD Series C ÏP M t D Umt:mm inch • Receptacles Lock lever type Ordering Information DHD-RA100-10AS i-o o î 2m W M QJ •1 V 38 r p ' Pn o CTi «> > 00 1 \O j L6.2 638) Dimensions ” o 7 MATING PLUGS Straight tail Right angle tail NO. OF CONT’S A B

Contextual Info: ROCKER SWITCHES SERIES RA1066 RA 1066 SPECIFICATIONS CONTACTRESISTANCE: 100mΩ max. DIELECTRIC STRENGTH: AC2000V for 1 minute LIFE E X P E C TA N C Y: Electrical/10,000 cycle R-Ll o a d Mechanical/25,000 cycle RATING: 1 0 A1 2 5 VAC / 5A2 5 0 VA C O P E R ATING FORCE: 400±200gf

EN4762

Abstract: A104 C104 RA104S RC104S
Contextual Info: Ordering number:EN4762 PNP/NPN Epitaxial Planar Silicon Transistors RA104S/RC104S Switching Applications with Bias Resistances Applications Package Dimensions • Switching circuits, inverter circuits, interface circuits, driver circuits. unit:mm 2033A [RA104S/RC104S]

Contextual Info: S er i e s 4 9. 4 9 M / R A 1 0 El ect r i cal S p e ci f i ca t i o n s Resistance Range 15Q to 2.5KQ linear for Series 49; 3Q to 2.5KO linear for Series 49M/RA10. Resistance Tolerance ±5% for 49 and 49M; ±10% forRAlO Power Rating 1.5 watts @ 40°C, or .005 watt per degree of effective

F MARKING 6PIN

Abstract: k937
Contextual Info: S A ftm 5/6-Pin CPs FC Series The Sanyo 5/6-pin chip packs are small-sized packages that facilitate higher-density mounting. We have various Packings that meet automatic mounting requirements. ale FETs for LF Amp General-purpose Amp, Differential Amp Applications

lp1k

Contextual Info: TRF1223 www.ti.com SLWS166A – APRIL 2005 – REVISED JULY 2005 3.3-GHz TO 3.8-GHZ 1-W Power Amplifier FEATURES • • • • • • • • 1 W P-1dB Linear, 30-dB Gain Transmitter Operates Over the 3300-MHz to 3800-MHz Range Two TTL Controlled, 1-bit, 16-dB Gain Steps

Cx2829

Abstract: ,national semiconductor Linear brief lb-3
Contextual Info: CX28250 ATM Physical Interface PHY Devices The CX28250 is an ATM-SONET Physical Layer (PHY) device with an integrated, PLL clock and data recovery (CDR) circuit. This device has optimized SONET framer functions for mapping ATM cells to SONET payloads for edge switch applications, and

TRF1123

Abstract: TRF1123IRTMR TRF1123IRTMRG3 TRF1123IRTMT TRF1123IRTMTG3 TRF1223
Contextual Info: TRF1123 www.ti.com SLWS167B – APRIL 2005 – REVISED SEPTEMBER 2006 2.1-GHz to 2.7-GHz 1-W Power Amplifier FEATURES • • • • • • VPOS 1.5 W P-1 dBm Linear, 30-dB Gain Transmitter Operates Over the MMDS, MDS, and WCS Bands 2.1 GHz to 2.7 GHz

ecg simulator circuit

Abstract: PIC24FJ256DA210 mini project using PIC microcontroller 2.8" TFT LCD DISPLAY programming with pic touch pad ctmu Application Example code DS39969 pickit connector DS51911A MRF24WB0MA PIC 18 MRF24WB0
Contextual Info: PIC24FJ256DA210 Development Board User’s Guide  2010 Microchip Technology Inc. DS51911A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

s3c46

Abstract: S3C4510B S3C4510 SDLC 8044 Transistor TEO 1279 diagram TCON resistor 270 ohm ARM7 Series 38109 0x303C
Contextual Info: S3C4510B 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW Samsung's S3C4510B 16/32-bit RISC microcontroller is a cost-effective, high-performance microcontroller solution for Ethernet-based systems. An integrated Ethernet controller, the S3C4510B, is designed for use in