RA 220 DIODE Search Results

F30JC

Abstract: S60HC1R5 s40H
Contextual Info: S chottky B arrier Diodes High frequency rectifying E-pack Lead type E-pack (SM D ) STO-220 (SM D ) Absolute Maximum Ratings Type No. V rm lo [V ] Electrical Characteristics Vf Ir Conditions Tc Ifsm Tstg Tj (max) Conditions [A] rc ] [A] ra ra [V ] [A] [mA]

E-PACK

Abstract: smd 2f 1fp3
Contextual Info: S chottky Barrier Diodes High fre q u e n c y re c tify in g IT0-220 1F Single Diodes TO-220 Absolute Maximum Ratings Type No. V rm lo [V ] [A] D1NS4 40 6 ☆ M 1FP3 30 1.29 ☆ M 1 FS4 40 1.33 * 60 1.2 6 40 6 D1FP3 60 D1FS4A D2S4M 6M 30 40 ra 59* 60 D 1FS4

Contextual Info: UNISONICTECHNOLOGIESCO., LTD SFR1020C DIODE U LT RA-FAST RECOV ERY RECT I FI ER DI ODES ̈ DESCRI PT I ON UTC SFR1020C is dual center tap rectifier suited for high frequency Switching Mode PowerSupplies applications. ̈ 1 FEAT U RES TO-220 * High Surge Current Capability

esm diodes

Abstract: ESM 200 ESM 980-400 ESM 990-400 diodes byt DO-220 DO-220AB diodes byt 400 08400 Diodes de redressement
Contextual Info: new fast recovery rectifier diodes< 100 A nouvelles diodes de redressement ra p id e < 100 A Types VRRM V (A) 8 A / Tcase = 120°C Case trr (ns) Tj = 150°C BY 233-200 BY 233-400 BY 233-600 200 400 600 8 150 DO 220 AB A 8 A / Tcase = 100° C Tj = 150°C

TH653

Contextual Info: Darlington Transistors Darlington Pow er T ra n s is to rs T0-220 bipolar transistors Type No. Electrical Characteristics Absolute Maximum Ratings Vcbo E IA J VCEO V ebo [V ] 2SD1022 100 100 1023 200 200 1024 100 100 1025 200 200 1026 100 100 200 200 500 400

f3l60u

Abstract: SF3L60U
Contextual Info: Super Fast Recovery Diode Single Diode OUTLINE Package I FTO-220 SF3L60U U n it : m m W e ig h t 1.9« T y p 600V 3A 4.5 Feature •fê S iü Œ 2kVßfiE • • • • • • 7 2 5 1 -r • Switching Regulator • PFC(Power Factor Correction) • ra M ± FRD

Contextual Info: n - n z ÿ ^ t - K Super Fast Recovery Diode Twin Diode OUTLINE DIMENSIONS D8LC40 Case : HQ-220 400V 8A •fiy -rx •trr50n s •7 J Æ -J U K •S R fflüS 0 y u - 7 U - r iiy *m m . OA, •a«, «g. • Æ tè ü a ra .r n fa RATINGS •¡Ê ë & ll^ ü Ë fë

IXGN40N60

Abstract: IXGH24N60CD1 IXGR39N60BD1 ixgr32n60cd1
Contextual Info: Discrete IGBT with FAST Diodes WifaH High Speed Series VcES V *C<25 A VCE SAT) max V t* typ ns TO-220 (P) JP TO-263 (A) PLUS247 (X) TO-247 (H) ► Ne w TO-268 AA T0 -2 04 (T) (M) ♦ ra ^ ISOPLUS220 ISOPLUS247™(R) SOT-2^ TO-264 (K) PLUS264™ (B) LOW SATU RATION VOLTAGE TYPES

bts132

Contextual Info: SIEMENS TEMPFET BTS132 VDS = 60 V lD = 24 A ^DS on = 0.065 Q • • • • • N channel E nhancem ent mode Logic level Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B ') O bserve circ u it design hints (see chapter Technical Inform ation)!

BTS 110

Contextual Info: Sf E M E U S TEMPFET BTS110 VDS = 100 V lD = 10 A ^DS on = 0-2 O • • • • N channel Enhancem ent mode Tem perature sen sor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see chapter Technical Inform ation)!

Contextual Info: S IE M tfS IS TEMPFET VDS lD ^ D S o n • • • • • BTS131 = 50 V = 25 A = 0.06 O N channel E nhancem ent mode Logic level Tem perature sensor with th yristo r ch a ra cte ristic Package TO -220 A B 1) O bserve circ u it design hints (see cha pter Technical Inform ation)!

0496B

Contextual Info: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 450 A SEMIPACK 2 Fast Diode1* Modules Ifa v (s in . 180 ; T case = 8 5 °C ; 5 0 Hz) V 220 A SKKE 301 F 1000 SKKE 301 F 10 1100 SKKE 301 F 11 1200 SKKE 301 F 12

0496B

Abstract: Diode semikron skke 120
Contextual Info: SEMIKRON V r sm I f r m s m a x im u m v a lu e s fo r c o n tin u o u s o p e ra tio n V r rm 220 A SEMIPACK 2 Fast Diode Modules I fav (s in . 180 ; Tease = 6 5 °C ; 5 0 Hz) V 140 A SKKE 120 F 1500 S K K E 120 F 15 1600 S K K E 120 F 16 Sym bol C ond itio ns

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3053 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION T his pro d u ct is N -C han ne l M O S Field E ffe ct T ra n sisto r PA R T N U M B E R PACKAGE 2S K 305 3 Isolated T O -220 d e sig n e d for high cu rre n t sw itch ing ap plicatio ns.

F20F6N

Abstract: 2SK2287
Contextual Info: 6 0 V v'J-X A^-MOSFET 60 V SERIES POWER MOSFET • O U T L IN E D IM E N S IO N S Case I FTO-220 2SK2287 F20F6N 60 v 20 a ■ R A T IN G S ■ ÎÊ ÎÎÎi^ S Ë fê A b s o lu te m M a x im u m Item -V ^ C h annel T e m p e ra tu re * v - x t l D r a in -S o u rc e V o lta g e

N0165

Contextual Info: SEMIKRON V r sm V r rm If r m s m a x im u m v a lu e fo r c o n tin u o u s o p e ra tio n 350 A If a v V V 400 220 A S K N D 165 S K N D 1 6 5 /0 4 600 600 S K N D 1 6 5 /0 6 800 800 S K N D 1 6 5 /0 8 1200 1200 S K N D 1 6 5 /1 2 C o n d itio n s S K N D 165

LL55C

Contextual Info: LL55C Series Voltage Range 2.4 to 75 Volts Zener diode Glass Case Mini Melf/SOD 80 Features JEDEC DO -213A A 1.Small surface mounting type 2.High reliability Applications Cathode band Voltage stabilization Ö - in+ Construction is 1 Silicon epitaxial planar

tunnel diodes

Abstract: tunnel diode e16 diode tunnel diode DO-7 2.TU
Contextual Info: TU 205/5, 205/10, 210/5, 210/10, 220/5, 220/10 P-Germanium tunnel diodes Tunnel diodes of the series TU 205, T U 2 1 0 and TU 220 are particularly designed for use as ultra-high-speed switches. Built into unvarnished glass cases 51 A 2 DIN 41880 D O -7 the diodes are available in 2 groups of maximum current tolerance

Contextual Info: Tem ic TZMC. TELEFU N K EN Semiconductors Silicon Epitaxial Planar Z Diodes Features • Very sharp reverse characteristic • L ow reverse current level • A vailable with tighter tolerances • Very high stability • L ow noise Applications Voltage stabilization

Contextual Info: vS ü y TZMB. ▼ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • V e ry s h a rp re v e rs e c h a ra c te ris tic • L o w re ve rs e c u rre n t level • A v a ila b le w ith tig h te r to le ra n c e s • V e ry high s ta b ility

Contextual Info: BZX55C2V4 FORWARD INTERNATIONAL ELECTRONICS LID. SEMICONDUCTOR TECHNICAL DATA THRU BZX55C39 TECHNICAL SPECIFICATIONS OF GLASS SILICON ZENER DIODES FE A TU R E S ' Vo l t age R a n g e : 2 . 4 V t o 3 9 V * Do u b l e sl ug t y p e c o n s t r u c t i o n DO-34/DO-35

DIODE Z1235

Abstract: Z1235 DIODE BZX 24 DIODE BZX 35 DIODE BZX 62 15 BZX DIODE bzx 18 bzx c12 DIODE Z1235 silicon type DIODE BZX
Contextual Info: BZX97 Silicon Z diode for 500 m W BZX 97 is an epitaxial silicon planar Z diode in a glass case 56 A 2 DIN 41883 D O -35 . It is used for the stabilization and limitation of voltages as well as for the generation of reference voltages at low power requirements.

DIODE BZX 62

Abstract: DIODE BZX ZENER bzx 46 c BZX55 COV8 ZENER bzx 46 c 20 ZENER bzx 55 c diode zener bzx 55 DIODE BZX 24 BZX55-C0V8 DIODE BZX 35
Contextual Info: BZX 55. SILICON PLANAR ZENER DIODES Silicon Planar Zener Diodes The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener voltages on request. max. 1.90 E« Cathode M ark max. 0.520 Glass case JEDEC DO-35

Contextual Info: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310