1FP3 Search Results

E-PACK

Abstract: smd 2f 1fp3
Contextual Info: S chottky Barrier Diodes High fre q u e n c y re c tify in g IT0-220 1F Single Diodes TO-220 Absolute Maximum Ratings Type No. V rm lo [V ] [A] D1NS4 40 6 ☆ M 1FP3 30 1.29 ☆ M 1 FS4 40 1.33 * 60 1.2 6 40 6 1FP3 60 D1FS4A D2S4M 6M 30 40 ra 59* 60 D 1FS4

2050I

Abstract: 1fp3
Contextual Info: Single Diode 1FP3 Schottky Barrier Diode mtmm o u t l i n e ft y - K v - ? 30V 1.29A Cathode m ark _ [P 6 N Feature • /JvgySMD Small SMD Ultra-Low V f= 0.4 V • Î b ÎS V f=0.4V IV I x D .y h ïa ^ - (« T ype No. Dale code Main Use • DCth^ORffl

F20SC4

Abstract: F20SC4M df40sc4 E10-P f10sc4 1fp3
Contextual Info: ^ lì S c h o ttk y B a rrie r Diodes Single Absolute Maximum Ratings V rm lo Conditions Tc Ifsm Tstg Tj [V] [A] [*c] [A] rc ] [°c] [V] - 5 5 - 150 150 -55 150 150 - 4 0 - 150 150 150 D1FS4 40 S I* 30 6 60 25 * 40 D2FS4 40 1.6 34* 6 60 1.5 3 1* D E3S4M

difs4a

Abstract: smd 2f DE10P3 DE5S4M AX057 AX078 DE10S3L ITO-220 DIFS4
Contextual Info: IT O -2 2 0 1F T O -2 2 0 Ab so lute Maxim um Ratings T y p e No. V rm Io Conditions Ifsm Electrical C haracteristics [A] [”C] T s tg [A] Ir Cj e\i 0 ja tvp (m ax) (m ax) If (m ax) V r = V rm [A] [mA] [pF] [•c/w] [“C/W] [’C/W] 0.8 50 Vf Tj (m ax)

DF40SC4

Abstract: 12F73 DE5PC3 DE5S4M M1FS6 DE10P3 DE10S3L DE10SC4 DF10SC4M DF15SC4M
Contextual Info: A b s o lu te M axim um R atings E le ctrica l C h a ra c te ris tic s Vf T y p e No. V rm lo [V ] [A ] Conditions Ifsm T s tg Tj m ax Conditions (m ax) If [•c] V r = V rm [A ] [•c] [V ] [A ] [m A ] -5 5 -1 5 0 150 D1FS4 40 5|582 6 60 2 5 *2 D2FS4 40

Contextual Info: Schottky Barrier Diode single Diode mwm o u t lin e Package : M1F 1FP3 » y -K -r-» 30V 1.29A Feature C a th o d e n w ir k |P 6 N • /J ^ S M D • Small SMD • Ì81S V f =0.4V • Ultra-Low V f=0.4V I — w — ^P yM dfr W T ype No. Main Use Date code

1fp3

Abstract: 3FS-4A 3fs4a smd 2f
Contextual Info: Schottky Barrier Diodes High frequency rectifying ITO-220 Single Diodes TO -220 A bsolute M axim um Ratings Type No. V rm lo C o n d itio n s Ifsm Tstg E lectrical C haracteristics I max) 250 -5 5 -1 2 5 125 0.41 20 10 960 — — 400 -5 5 -1 2 5 125 0.41

5SC3

Contextual Info: S c h o ttk y B a rrie r Diodes Single M1F Absolute Maximum Ratings Type No. Electrical Characteristics V rm lo Conditions Ta I fsm Tstg Tj Vf (max) [V ] [A ] [•c] [A ] [•c] C*c] [V ] 5I 25 34 30 —55— 150 150 D 1FS4 40 6 60 D2FS4 40 6 60 DE3S4M 40

SHINDENGEN TR 222

Abstract: h0263 sh7 94v-0 SHINDENGEN SHINDENGEN "TR 222" JD 1801 99120 SHINDENGEN 221 M1FL20U MIF60
Contextual Info: m CAT. No. TJ498-3 0 5 1 ^ 3 0 7 DDOSlbD SES m Surface Mounting Diodes □ □ El □ • ■ □ □ ■ ■ M1F SERIES m E3e ■ si ■Summary m g » r ^ S A ° 9 - T ;'n '- < 7 .0 '5 t< fò 5 n r i^ - r o □ — K ' > 3 With the expansion of demand for minimal size and