R604 Search Results

Contextual Info: R6046FNZ 10V Drive Nch MOSFET - R6046FNZ Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6046FNZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

Contextual Info: R6046FNZ Data Sheet 10V Drive Nch MOSFET R6046FNZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

R6046ANZ

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6046ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

Contextual Info: R6046ANZ Data Sheet 10V Drive Nch MOSFET R6046ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

Contextual Info: PACKAGE DIMENSIONS mm R204 *H-f- H 2'^6 17.5 7 16 18.5 12 22 .5 ' 23 3 - M 5 < 10 J -, •h r * ^ = 'i iliT L R206 20.0 ^ ms 131.0 1 I 2 0.0, , 20 .0 ,l a2 0 . 0^ , 3 - 0 6 . M I M l□ I 2 5 .0 I 38.0 | 25.0 | ^ li 3 1 ,0| " 'W 1" I ^68.r*~ r / R604A 8 0 . 8 0 .

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6046ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

Contextual Info: R6046FNZ Nch 600V 46A Power MOSFET Datasheet l Outline VDSS 600V RDS on (Max.) 93mΩ ID ±46A PD 120W TO-3PF l Inner circuit l Features 1) Fast reverse recovery time (trr).

Contextual Info: R6047ENZ1 Nch 600V 47A Power MOSFET Data Sheet lOutline VDSS 600V RDS on (Max.) 0.072W ID 47A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6046ANZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

Contextual Info: R6047ENZ1 Nch 600V 47A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.072W ID 47A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: R6046ANZ1 Nch 600V 46A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.09W ID 46A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R6046FNZ  Dimensions Unit : mm 5.5 TO-3PF 15.5 0.44 4.5 2.0 3.0 2.0 2.5 2.0 3.5 16.5 16.5 14.5 26.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 3.0 φ3.6 10.0  Structure Silicon N-channel MOSFET

R6046FNZ1

Contextual Info: R6046FNZ1 Datasheet Nch 600V 46A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.098W ID 46A PD 120W TO-247 (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

DS377

Contextual Info: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.

r727

Contextual Info: User's Guide SLLU180 – June 2013 TLK10232 Dual-Channel XAUI/10GBASE-KR Transceiver with Crosspoint Evaluation Module EVM Graphical Users Interface User’s Guide This user’s guide describes the usage and construction of the TLK10232 evaluation module (EVM). This

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Contextual Info: Evaluation Board User Guide UG-290 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Evaluating the AD9434 and AD9484 Analog-to-Digital Converters FEATURES Full featured evaluation board for the AD9434 and AD9484

kcc cl-150

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Contextual Info: General Data — Selection Chart Bussmann Buss Fuse Selection Chart 600 Volts or Less Circuit Load Ampere Fuse Rating Type Symbol Voltage Rating (a-c) Class Interrupting Rating (KA) Remarks All-purpose fuses. Unequaled for combined short-circuit and overload protection.

goodyear pliobond

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Contextual Info: GEC PL ES SE Y SI SEPTEMBER 1997 SEMI CO NDUC TOR S DS4450-3.2 R604SE PHASE CONTROL THYRISTOR KEY PARAMETERS 2100V DRM 562A Jt AV 8100A TSM dVdt* 1000V/(JS d l/d t 700A/(JS APPLICATIONS • High Power Drives. ■ High Voltage Power Supplies. ■ DC Motor Control.

transistor NEC K2500

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transistor C9012

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Contextual Info: APPLICATION NOTE The GTV1000 Global TV Receiver AN98051 Quvyvƒ†ÃTr€ vp‚qˆp‡‚…† The GTV1000 Global TV Receiver Application Note AN98051 Abstract The GTV1000 receiver has been designed around the TDA884X TV signal processor. The large signal part is suited for 90° picture tubes and build on one board with the small signal part.

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Contextual Info: Octal, 12-Bit, 40/50 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 93 mW ADC power per channel at 50 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 84 dBc Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical)

motorola D213 user guide

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Contextual Info: High Speed ADC USB FIFO Evaluation Kit HSC-ADC-EVALB FEATURES FUNCTIONAL BLOCK DIAGRAM Buffer memory board for capturing digital data used with high speed ADC evaluation boards to simplify evaluation 32 kB FIFO depth at 133 MSPS upgradable Measures performance with ADC Analyzer