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    R6008FN Search Results

    R6008FN Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    R6008FNJTL
    ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 8A LPTS Original PDF 14
    R6008FNX
    ROHM FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 8A TO-220FM Original PDF 14
    SF Impression Pixel

    R6008FN Price and Stock

    ROHM Semiconductor

    ROHM Semiconductor R6008FNX

    MOSFET N-CH 600V 8A TO-220FM
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    Mouser Electronics R6008FNX 482
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    Verical R6008FNX 90 56
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    Quest Components R6008FNX 72
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    ROHM Semiconductor R6008FNJTL

    MOSFET N-CH 600V 8A LPTS
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    Verical R6008FNJTL 100 67
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    Newark R6008FNJTL Cut Tape 1
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    Bristol Electronics R6008FNJTL 2,000 2
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    Quest Components () R6008FNJTL 1,600
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    R6008FNJTL 800
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    R6008FNJTL 80
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    R6008FN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: R6008FNX Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNX O-220FM R1120A PDF

    Contextual Info: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNJ SC-83) R1120A PDF

    PARW5

    Contextual Info: R6008FNX Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNX O-220FM R1120A PARW5 PDF

    Contextual Info: R6008FNX R6008FNX Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNX O-220FM R1120A PDF

    R6008FN

    Contextual Info: R6008FNX Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNX O-220FM R1120A R6008FN PDF

    Contextual Info: Data Sheet 10V Drive Nch MOSFET R6008FNJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Fast reverse recovery time (trr) 4.5 1.0 1.24 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 2) Low on-resistance. 3) Fast switching speed.


    Original
    R6008FNJ R6008FNJ R1120A PDF

    Contextual Info: R6008FNJ R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNJ SC-83) R1120A PDF

    Contextual Info: R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNJ SC-83) R1120A PDF

    Contextual Info: R6008FNJ Nch 600V 8A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.


    Original
    R6008FNJ SC-83) R1120A PDF

    R6008FNX

    Abstract: R6008
    Contextual Info: 10V Drive Nch MOSFET R6008FNX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Fast reverse recovery time. 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V.


    Original
    R6008FNX O-220FM R0039A R6008FNX R6008 PDF

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


    Original
    RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND PDF

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original
    5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200 PDF