R5 RF TRANSISTOR Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8HP21080H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth

transistor z4 n

Abstract: NPN transistor mhz s-parameter mjd310 MRF282
Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA MRF282SR1 MRF282ZR1 The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

MRF282

Contextual Info: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP6300H Rev. 1, 7/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP6300HR3 MRFE6VP6300HSR3 These high ruggedness devices are designed for use in high VSWR industrial

H6050

Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805
Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

smd transistor wb1

Abstract: wb1 sot package sot-23
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

motorola rf Power Transistor obsolete

Abstract: MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

smd wb1 transistor

Abstract: smd wb2 WB1 SOT23
Contextual Info: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

smd transistor t A1 sot-23 npn

Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up

MRF8P20140WH/HS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

smd transistor 927

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

MRF282

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-1 Rev. 16, 10/2008 RF Power Field Effect Transistor MRF282SR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

smd transistor marking j2

Abstract: sot 23 transistor marking w 26 MRF18060A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF18060A-2 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF18060ALR3 Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

AFT21S230S

Abstract: aft21s232s C5750X7S2A106M
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

RF POWER TRANSISTOR NPN, motorola

Abstract: MRF18060 MRF18060A
Contextual Info: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull

MRF18060A

Contextual Info: Document Number: MRF18060A Rev. 11, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18060ALR3 LIFETIME BUY Designed for PCN and PCS base station applications with frequencies from

ATC800B1

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for applications operating at 1300 MHz.

smd mosfet z8

Abstract: smd z5 transistor 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS irl 1310 SMD TRANSISTORS AAA
Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from

transistor smd z9

Contextual Info: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from

100B201JT500XT

Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at