R1102S Search Results

SCS206AM

Contextual Info: SCS206AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

Contextual Info: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

scs206

Abstract: SCS206AJ
Contextual Info: SCS206AJ SiC Schottky Barrier Diode Datasheet Outline VR 600V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible

SCS208AG

Abstract: marking CODE 56 ROHM
Contextual Info: SCS208AG Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 8A QC 13nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS210

Abstract: do Marking rohm Rohm
Contextual Info: SCS210AM Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 10A QC 15nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications

ROHM marking

Contextual Info: SCS208AJ SiC Schottky Barrier Diode Datasheet Outline VR 600V IF 8A QC 13nC LPT L <TO-263AB> (1) (2) (3) (4) Features Inner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible

25Forward

Contextual Info: SCS212AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 12A QC 18nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

Contextual Info: SCS206AJ Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 6A QC 9nC LPT L <TO-263AB> (1) (2) (3) (4) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible

dc/tx/1/2/PS/SCT2080KE

Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 (1) (2) (3) Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) (1) Gate (2) Drain (3) Source

Contextual Info: SCS220AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 20A QC 31nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: SCS210AM SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 10A QC 15nC TO-220FM 2 (1) lFeatures lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) lPackaging specifications

Contextual Info: SCS208AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 8A QC 13nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

Contextual Info: SCS120KG Datasheet SiC Schottky Barrier Diode Outline VR 1200V IF 20A QC 70nC 1 TO-220AC (2) (3) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible

SCS208AJ

Contextual Info: SCS208AJ Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 8A QC 13nC LPT L <TO-263AB> (1) (2) (3) (4) Inner circuit Features (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) N / C (3) Cathode (4) Anode 3) High-speed switching possible

SiC POWER MOSFET

Abstract: SCT2080 MOSFET 1200V ROHM
Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source

Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

Contextual Info: SCS212AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 12A QC 18nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS210AG

Contextual Info: SCS210AG Datasheet SiC Schottky Barrier Diode lOutline VR 600V IF 10A QC 15nC TO-220AC 1 (2) lFeatures (3) lInner circuit (1) 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCH2080KE

Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

rohm ordering information

Contextual Info: SCS208AM Datasheet SiC Schottky Barrier Diode Outline VR 600V IF 8A QC 13nC TO-220FM 2 (1) Inner circuit Features 1) Shorter recovery time 2) Reduced temperature dependence (1) Cathode (2) Anode 3) High-speed switching possible (1) (2) Packaging specifications

Contextual Info: SCS208AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 8A QC 13nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

SCS220AE

Contextual Info: SCS220AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 10A/20A* QC 15nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible

SCS210AG

Contextual Info: SCS210AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 10A QC 15nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)

Contextual Info: SCS206AG SiC Schottky Barrier Diode Datasheet lOutline VR 600V IF 6A QC 9nC TO-220AC 1 (2) lFeatures (3) lInner circuit 1) Shorter recovery time (1) 2) Reduced temperature dependence (1) Cathode (2) Cathode (3) Anode 3) High-speed switching possible (2)