R1 MARKING Search Results

si - 4102

Contextual Info: NICHROME ON SILICON NEW PRODUCT Single Ended SCSI Termination Circuit Thin Film Resistor Networks SCHEMATICS Single Ended SCSI Small Computer System Interface Termination Network 16 Pin 16 R2 R2 R1 R2 R2 R1 R1 R1 R1 R2 R2 R1 R2 R2 R1 R1 R1 R2 R2 R1 R1 R2

Contextual Info: NICHROME ON SILICON NEW PRODUCT Differential Ended SCSI Termination Circuit Thin Film Resistor Networks SCHEMATICS Differential Ended SCSI Small Computer System Interface Termination Network 20 Pin 16 Pin 16 (VCC) 20 (VCC) 9 11 R1 R1 R1 R1 R1 R1 R1 R1 R1

Contextual Info: TANTALUM NITRIDE ON SILICON NEW PRODUCT Single Ended SCSI Termination Circuit Thin Film Resistor Networks SCHEMATICS Single Ended SCSI Small Computer System Interface Termination Network 16 Pin 16 R2 R2 R1 R2 R2 R1 R1 R1 R1 R2 R2 R1 R2 R2 R1 R1 R1 R2 R2

Contextual Info: TaN on Si SERIES NEW PRODUCT Tantalum Nitride on Silicon Thin Film Resistor Network Single Ended SCSI Termination Circuit SCHEMATICS Single Ended SCSI Small Computer System Interface Termination Network 16 Pin 16 R2 R2 R1 R1 R1 R2 R2 R1 R1 R1 R2 R2 R2 R2

Contextual Info: TaN on Si SERIES NEW PRODUCT Tantalum Nitride on Silicon Thin Film Resistor Network NTL Termination Circuit SCHEMATIC NTL NMOS Transceiver Logic Termination Network 16 Pin 16 R1 9 R1 R2 R1 R2 R1 R2 R1 R2 4 R1 R2 R2 8 1 ELECTRICAL Operating Temperature Range

Contextual Info: NICHROME ON SILICON NEW PRODUCT V.35 Termination Thin Film Resistor Networks SCHEMATIC V.35 Termination Network 16 Pin 16 9 R1 R1 R1 R1 R2 R2 R2 R2 R2 R2 R1 4 R1 8 1 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range Interlead Capacitance

nichrome

Contextual Info: NICHROME ON SILICON NEW PRODUCT NTL Termination Circuit Thin Film Resistor Networks SCHEMATIC NTL NMOS Transceiver Logic Termination Network 16 Pin 16 R1 9 R1 R2 R1 R2 R1 R2 R1 R2 4 R1 R2 R2 8 1 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range

DTC124E

Abstract: T110
Contextual Info: UMH5N / IMH5A Transistors General purpose dual digital transistors UMH5N / IMH5A R2 0.1Min. R1 R1 (4) (5) (3) (6) R1=R2=22kΩ (2) 2.0 1.3 0.15 R2 R2 0.65 2.1 R1 R1 R2 (3) (6) (1) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 R1=R2=22kΩ 0.9 (5)

marking code H8

Abstract: DTC114T T108
Contextual Info: UMH8N / IMH8A Transistors General purpose dual digital transistors UMH8N / IMH8A 2.0 1.3 (3) (2) R1 (5) (6) 0.1Min. R1 R1 (4) (5) (6) (3) (2) Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 R1 R1=10kΩ 0.7 (4) 0~0.1 (1) 0.15 IMH8A (2) 0.9 2.1 UMH8N

DTC144T

Abstract: EMH15 IMH15A T110
Contextual Info: EMH15 / IMH15A Transistors General purpose dual digital transistors EMH15 / IMH15A zDimensions (Unit : mm) zFeatures 1) Two DTC144T chips in a EMT or SMT package. IMH15A zEquivalent circuit EMH15 (6) IMH15A (5) (4) (4) R1 (5) R1 (1) (6) R1 (2) R1 (3) (3)

BCR166

Abstract: BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts
Contextual Info: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2

BQ30Z554-R1

Contextual Info: bq30z554-R1 www.ti.com SLUSBD4 – OCTOBER 2013 2-Series, 3-Series, and 4-Series Li-Ion Battery Pack Manager Check for Samples: bq30z554-R1 FEATURES DESCRIPTION • The bq30z554-R1 device is a fully integrated Impedance Track gas gauge and analog monitoring

RN4991AFS

Contextual Info: RN4991AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4991AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 C R1 B E 2 5 3 4 R1 fS6 E R1: 10 kΩ

RN4991AFS

Contextual Info: RN4991AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4991AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 C R1 B E 2 5 3 4 R1 fS6 E R1: 10 kΩ

BQ28Z560-R1

Contextual Info: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge

BQ28Z560-R1

Contextual Info: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge

RN4983AFS

Contextual Info: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C R1 fS6 R2 B R2 B E E R1: 22 kΩ

DTA143X

Abstract: T148 MARKING CODE 21
Contextual Info: EMA7 / UMA7N / FMA7A Transistors Emitter common dual digital transistors EMA7 / UMA7N / FMA7A zExternal dimensions (Units : mm) zFeatures 1) Two DTA143X chips in a EMT or UMT or SMT package. (2) (5) R1 R1 (5) (2) (4) (5) R2 R2 ROHM : EMT5 R1 Each lead has same dimensions

Contextual Info: IC Transistors SMD Type Product specification FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 3 (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO

Contextual Info: Transistors IC SMD Type Emitter common Dual Digital Transistors FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 (3) (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate Transistors EMB4 General purpose transistors dual digital transistors SOT-563 FEATURES z Two DTA114T chips in a package 1 Marking: B4 (3) Equivalent circuit (2) (1) R1 R1 (4)

Contextual Info: Transistors IC SMD Type Emitter common dual digital transistors FMG9A Unit: mm • Features ● Input voltage:Vin=40V ● Output current: IO=50mA 4 5 1 (3) (2) 2 3 (1) R1=10kΩ R1 DTr2 R2 R2 (4) R1 R2=10kΩ DTr1 (5) ■ Absolute Maximum Ratings Ta = 25℃

BCR151

Abstract: BCR151F BCR151L3 BCR151T SC75
Contextual Info: BCR151. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 100kΩ , R2 = 100kΩ BCR151F/L3 BCR151T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR151F*

Contextual Info: BCR164. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 10kΩ BCR164F/L3 BCR164T C 3 R1 R2 1 B 2 E EHA07183 Type Marking Pin Configuration Package BCR164F*