R1 MARKING Search Results

si - 4102

Contextual Info: NICHROME ON SILICON NEW PRODUCT Single Ended SCSI Termination Circuit Thin Film Resistor Networks SCHEMATICS Single Ended SCSI Small Computer System Interface Termination Network 16 Pin 16 R2 R2 R1 R2 R2 R1 R1 R1 R1 R2 R2 R1 R2 R2 R1 R1 R1 R2 R2 R1 R1 R2

Contextual Info: NICHROME ON SILICON NEW PRODUCT Differential Ended SCSI Termination Circuit Thin Film Resistor Networks SCHEMATICS Differential Ended SCSI Small Computer System Interface Termination Network 20 Pin 16 Pin 16 (VCC) 20 (VCC) 9 11 R1 R1 R1 R1 R1 R1 R1 R1 R1

Contextual Info: NICHROME ON SILICON NEW PRODUCT V.35 Termination Thin Film Resistor Networks SCHEMATIC V.35 Termination Network 16 Pin 16 9 R1 R1 R1 R1 R2 R2 R2 R2 R2 R2 R1 4 R1 8 1 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range Interlead Capacitance

nichrome

Contextual Info: NICHROME ON SILICON NEW PRODUCT NTL Termination Circuit Thin Film Resistor Networks SCHEMATIC NTL NMOS Transceiver Logic Termination Network 16 Pin 16 R1 9 R1 R2 R1 R2 R1 R2 R1 R2 4 R1 R2 R2 8 1 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range

BCR166

Abstract: BCR166F BCR166L3 BCR166T SEMB13 TRANSISTOR wts
Contextual Info: BCR166./SEMB13 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7kΩ , R2 = 47kΩ BCR166/F/L3 BCR166T/W SEMB13 C C1 B2 3 6 5 E2 4 R2 R1 R1 TR2 TR1 R2 R1 R2 1 B 2 1 2

RN4991AFS

Contextual Info: RN4991AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4991AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 C R1 B E 2 5 3 4 R1 fS6 E R1: 10 kΩ

BQ28Z560-R1

Contextual Info: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge

BQ28Z560-R1

Contextual Info: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge

BQ28Z560-R1

Contextual Info: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge

RN4983AFS

Contextual Info: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C R1 fS6 R2 B R2 B E E R1: 22 kΩ

DTA143X

Abstract: T148 MARKING CODE 21
Contextual Info: EMA7 / UMA7N / FMA7A Transistors Emitter common dual digital transistors EMA7 / UMA7N / FMA7A zExternal dimensions (Units : mm) zFeatures 1) Two DTA143X chips in a EMT or UMT or SMT package. (2) (5) R1 R1 (5) (2) (4) (5) R2 R2 ROHM : EMT5 R1 Each lead has same dimensions

Contextual Info: IC Transistors SMD Type Product specification FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 3 (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO

Contextual Info: Transistors IC SMD Type Emitter common Dual Digital Transistors FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 (3) (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage

Contextual Info: Transistors IC SMD Type Emitter common dual digital transistors FMG9A Unit: mm • Features ● Input voltage:Vin=40V ● Output current: IO=50mA 4 5 1 (3) (2) 2 3 (1) R1=10kΩ R1 DTr2 R2 R2 (4) R1 R2=10kΩ DTr1 (5) ■ Absolute Maximum Ratings Ta = 25℃

BCR114

Abstract: BCR114F BCR114L3 BCR114T SC75
Contextual Info: BCR114. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 =4.7kΩ, R2 =10kΩ BCR114/F BCR114L3/T C 3 R1 R2 1 B 2 E EHA07184 Type Marking Pin Configuration BCR114 U4s 1=B 2=E

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VPS05161 EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR569

Contextual Info: BCR569 PNP Silizium Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 VPS05161 R1 1 2 B E EHA07180 Type Marking BCR569 XLs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR196

Contextual Info: BCR196 PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=47kW, R2=22kW 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07183 Type Marking BCR196 WXs Pin Configuration 1=B 2=E Package 3=C SOT23

BCR169W

Abstract: VSO05561
Contextual Info: BCR169W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VSO05561 EHA07180 Type Marking BCR169W WSs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings

BCR129T

Abstract: SC75
Contextual Info: BCR129T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k 2 C 3 1 R1 1 2 B E VPS05996 EHA07264 Type Marking BCR129T WVs Pin Configuration 1=B 2=E Package 3=C SC75 Maximum Ratings

BCR119W

Abstract: VSO05561
Contextual Info: BCR119W NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=4.7k 2 C 3 1 R1 1 2 B E VSO05561 EHA07264 Type Marking BCR119W WKs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings

BCR129

Contextual Info: BCR129 NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k 2 C 3 1 R1 1 2 B E VPS05161 EHA07264 Type Marking BCR129 WVs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

BCR129T

Abstract: SC75
Contextual Info: BCR129T NPN Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1=10k 2 C 3 1 R1 1 2 B E VPS05996 EHA07264 Type Marking BCR129T WVs Pin Configuration 1=B 2=E Package 3=C SC75 Maximum Ratings

BCR169W

Abstract: VSO05561
Contextual Info: BCR169W PNP Silicon Digital Transistor 3
Switching circuit, inverter, interface circuit, driver circuit
Built in bias resistor R1 = 4.7k 2 C 3 1 R1 1 2 B E VSO05561 EHA07180 Type Marking BCR169W WSs Pin Configuration 1=B 2=E Package 3=C SOT323 Maximum Ratings