R1 55 Search Results

Contextual Info: TAIWAN LITON ELECTRONIC L IT E M ^ I T-13/4 5mm RESISTOR LAMPS 4TE » • LTL-4203-R1/R2 LTL-4213-R1/R2 LTL-4223-R1/R2 LTL-4233-R1/R2 0035^5 GGG3375 4T7 ■ T L I T ‘ i RED BRIGHT RED Ht.EFF.RED GREEN LTL-4238-R1/R2 GREEtò LTL-4253-R1/R2 YELLOW LTL-4293-RVR2 ORANGÉ

521T

Contextual Info: MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5210W 47 - MMDT521DW 47 10 MMDT5211W 10 10 MMDT521EW 47 22

5213

Contextual Info: MMDT5210W…MMDT521ZW NPN Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5210W 47 - MMDT521DW 47 10 MMDT5211W 10 10 MMDT521EW 47 22

MMDT511HW

Abstract: 5114 MMDT5116W
Contextual Info: MMDT5110W…MMDT511ZW PNP Silicon Epitaxial Planar Digital Transistor Collector Output Base (Input) R1 R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) Type R1 (KΩ) R2 (KΩ) MMDT5110W 47 - MMDT511DW 47 10 MMDT5111W 10 10 MMDT511EW 47 22

BQ28Z560-R1

Contextual Info: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge

BQ28Z560-R1

Contextual Info: bq28z560-R1 www.ti.com SLUSBD3 – APRIL 2013 bq28z560-R1 Single Cell Li-Ion Battery Gas Gauge and Protection Check for Samples: bq28z560-R1 FEATURES 1 • 23 • • A Comprehensive Single Cell Li-Ion Battery Manager Integrates All Essential Functions: – Gas Gauge

RN4983AFS

Contextual Info: RN4983AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4983AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 C R1 fS6 R2 B R2 B E E R1: 22 kΩ

Contextual Info: IC Transistors SMD Type Product specification FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 3 (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO

schneider Pt100 sensor

Abstract: schneider electric Pt100 rtd pt100 4-20ma wiring diagram current source pt100 pt100 sensor interface WITH ADC cip common single LOAD CELL IO4AB nokia 1200 circuit diagram pt100 sensor with adc 4-20mA
Contextual Info: ETHERNET/IP FOR SNAP PAC PROTOCOL GUIDE SNAP-PAC-S1 SNAP-PAC-S2 SNAP-PAC-R1 SNAP-PAC-R2 SNAP-PAC-EB1 SNAP-PAC-EB2 SNAP-PAC-S1-W SNAP-PAC-S2-W SNAP-PAC-R1-W SNAP-PAC-R2-W SNAP-PAC-EB1-W SNAP-PAC-EB2-W SNAP-PAC-S1-FM SNAP-PAC-R1-FM SNAP-PAC-R2-FM SNAP-PAC-EB1-FM

Contextual Info: MMDTC114W NPN Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTC114W 10 47 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage

Contextual Info: NICHROME ON SILICON NEW PRODUCT HSTL Termination Circuit Thin Film Resistor Networks SCHEMATIC HSTL High Speed Transceiver Logic Termination Network 24 Pin 24 13 R1 R2 4 R1 R2 12 1 ELECTRICAL Standard Resistance Range, Ohms Operating Temperature Range Interlead Capacitance

FQ51A

Abstract: NCV424 EBM23 SH41 hb21 NMUL22 4914 EBC11 MCS-51 FD69
Contextual Info: MCS-51 单片机实用子程序库 ;片内 RAM 初始化子程序 IBCLR: MOV A,R0 MOV R1,A CLR A IBC1 : MOV @R1,A INC R1 DJNZ R7,IBC1 RET ;片外 RAM 初始化子程序 EBCLR1: MOV A,ADDPL MOV DPL,A MOV A,ADDPH MOV DPH,A CLR C EBC11: MOVX @DPTR,A INC DPTR

RN4988FS

Contextual Info: RN4988FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4988FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2

RN4987AFS

Contextual Info: RN4987AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4987AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 R1 5 3 4 fS6 1. EMITTER1

Contextual Info: MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector Output R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage

RN4982AFS

Contextual Info: RN4982AFS TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type PCT Process (Transistor with Built-in Bias Resistor) RN4982AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C fS6 R1 R2 B R2 B R1 E 5 3 4

DDTC144EUA

Abstract: 10KW 22KW DDTC114EUA DDTC115EUA DDTC123EUA DDTC124EUA DDTC143EUA J-STD-020A
Contextual Info: DDTC R1 = R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 A OUT Mechanical Data · · ·

n02 marking code sot

Abstract: transistor T 523 2.2KW DDTC143FE DDTC113ZE DDTC114WE DDTC114YE DDTC123JE DDTC123YE N02 Transistor
Contextual Info: DDTC R1¹R2 SERIES E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1¹R2 A OUT TOP VIEW Mechanical Data ·

N01 marking

Abstract: DDTC113TCA DDTC114TCA DDTC115TCA DDTC123TCA DDTC124TCA DDTC125TCA DDTC143TCA DDTC144TCA J-STD-020A
Contextual Info: DDTC R1-ONLY SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistor, R1 only A TOP VIEW Mechanical Data · ·

UNCL-X1MH

Contextual Info: MIXERS/AMPLIFIERS Plug-In LOW NOISE 4.3 dB typ. 10 to 500 MHz UNCL-R1 (+7 dBm LO, up to -10 dBm RF) FREQUENCY MHz MODEL NO. UNCL-R1 LO/RF IF fL-fU CONVERSION GAIN, dB UNCL-R1 LO-RF ISOLATION, dB LO-IF ISOLATION, dB Mid-Band Total Range L M U L M U _ m σ Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.

N20 marking transistor

Abstract: marking N20 MARKING CODE n20
Contextual Info: DDTC R1 = R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Product Summary Features and Benefits Part Number R1, R2 (NOM) DDTC123EUA 2.2KΩ DDTC143EUA 4.7KΩ DDTC114EUA 10KΩ DDTC124EUA 22KΩ DDTC144EUA 47KΩ DDTC115EUA 100KΩ • • •

marking P20 SOT23

Abstract: marking code p13 P08 transistor P17 MARKING MARKING P04
Contextual Info: DDTA R1 = R2 SERIES CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary NPN Types Available (DDTC) Built-In Biasing Resistors, R1 = R2

MARKING CODE n20

Abstract: DDTC144ECAQ-13-F N20 marking transistor marking n20
Contextual Info: DDTC R1 = R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2

45558

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - UNCL-R1 Frequency Mixers Notes: • DC power is applied at pin 4. DC power UNCL-R1 required is 12 V at 35 mA. • General Quality Control Procedures and Environmental Specifications are given in Mini- Circuits Guarantees Quality.