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RJH60D1DPP-M0 Abstract: IGBT inverter design and operation Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0158EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D1DPP-M0 R07DS0158EJ0300 PRSS0003AF-A O-220FL) RJH60D1DPP-M0 IGBT inverter design and operation	PDF

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RJH60D1DPP-M0

Abstract: IGBT inverter design and operation
Contextual Info: Preliminary Datasheet RJH60D1DPP-M0 Silicon N Channel IGBT Application: Inverter R07DS0158EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ.  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

Original

RJH60D1DPP-M0 R07DS0158EJ0300 PRSS0003AF-A O-220FL) RJH60D1DPP-M0 IGBT inverter design and operation

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