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R07DS0157EJ0300 Datasheets Context Search
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Contextual Info: Preliminary Datasheet RJH60D1DPE Silicon N Channel IGBT Application: Inverter R07DS0157EJ0300 Rev.3.00 Nov 16, 2010 Features • Short circuit withstand time 5 s typ. Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C) |
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RJH60D1DPE R07DS0157EJ0300 PRSS0004AE-B |