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RJH60D1 Abstract: RJH60 RJH60D1DPE Contextual Info: Preliminary Datasheet RJH60D1DPE R07DS0157EJ0200 Previous: REJ03G1840-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)	Original	RJH60D1DPE R07DS0157EJ0200 REJ03G1840-0100) PRSS0004AE-B RJH60D1 RJH60 RJH60D1DPE	PDF

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RJH60D1

Abstract: RJH60 RJH60D1DPE
Contextual Info: Preliminary Datasheet RJH60D1DPE R07DS0157EJ0200 Previous: REJ03G1840-0100 Rev.2.00 Sep 21, 2010 Silicon N Channel IGBT Application: Inverter Features • Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.9 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)

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RJH60D1DPE R07DS0157EJ0200 REJ03G1840-0100) PRSS0004AE-B RJH60D1 RJH60 RJH60D1DPE

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