R 4.7 K Search Results

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

UNC-2B 2-56

Abstract: UNC-2B 4-40 unc-2b Jackpost 32HEX 32 UNC-2B #8 -32 unc -2A
Contextual Info: MI L -D T L -8 3 5 1 3 Mic r o -D 500-063 Micro-D Jackpost Kit for Printed Circuit Boards .155 3.9 MPT 2-56 UNC-2B 2-56 UNC-2A -1 .125 (3.2) Hex .190 (4.8) .185 (4.7) .190 (4.8) Max .170 (4.3) MPT 4-40 UNC-2B 4-40 UNC-2A -2 .187 (4.7) Hex .185 (4.7) .175 (4.4)

98ASA10556D

Contextual Info: PIN’S NUMBER SECTION F R E E S C A L E SEMICONDUCTOR, ALL R I G H T S RESERVED. INC. MECHANICAL OUTLINE TITLE: 32LD SOIC W/B, 0.65 PITCH 4.7 X 4.7 EXPOSED PAD, CASE—OUTLINE A-A P R IN T VERSION NOT TO SCALE DOCUMENT NO: 98ASA10556D REV: D CASE NUMBER: 1454-04

zener diode zS

Abstract: ZS11 100 watt zener diode LT 72 ZENER
Contextual Info: ZS SERIES, 4.7 VOLTS DIODES LIMITED thru 36 VOLTS FAIRACRES ESTATE. DEDW O RTH R OAD, W IN D S O R . BERKSHIRE. Telephone: W IN D S O R 69571 T ele x: 847 25 5 SEMICONDUCTOR MANUFACTURERS The Diodes Incorporated types ZS 4.7 thru ZS 36 represent a line of 1 watt, axial lead, zener diodes

Contextual Info: NEC » f / 7s— 9 • 2 /— h C o m l i- r z T r a n s is t o r GN1L3M M « p o u n d p n p i 'J □ tt > A V =7 M T O O / N '^ ! mm 2.1 ±0.1 1.25 ±0.1 (R i =4.7 kQ, R 2= 4.7 k£2) O— W V R. O GA1L3M t =i > 7° U / > ? i) zl&Fìì T * & t „ ( T a = 25 °C

ni3ti

Abstract: LU024 M10258 IS333 k 6115 FK 231 SA 220 UI02 S333 T108 T460
Contextual Info: NEC m = f = r i v « r • 7— S • 5 /— h Compound Transistor x FN1L3M it H o ^ 'M M T x f f i i j t i - r t i l L T v ' i t c ¥ f i : mm 2 . 8 ± 0.2 1.5 (R i = 4.7 kQ, R2= 4.7 kQ) O — V v V R O FA1L3M t =1 > 7 °'! / > 7 ') T l Ì f f l T 'è

Contextual Info: S' I <E > flev. DESCRIPTION APPO. * >< i z O i<=K D -4 1 *1 Q R PC 1 P a rt No. in d u ctan ce To l. uhy 1 R 5 -1 5 1 R 8 -1 0 1R 8 -1 5 4 R 7 -3 4 R 7 -5 4 R 7 -1 0 1 1.8 1.8 4.7 4.7 100-3 100-5 100 -1 0 150-20 2 2 0 -3 2 20 -5 2 2 0 -1 0 4 70 -3 4 70 -5

GN1L3M

Contextual Info: 1 DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GN1L3M m MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • Resistors Built-in TYPE R t = 4.7 k£2 R2 = 4.7 k£2 • Complementary to GA1L3M ABSOLUTE M A X IM U M RATINGS

Contextual Info: DATA SHEET NEC SILICO N TRAN SISTO R ELECTRON DEVICE GN1L3M M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • Resistors B u ilt-in TY PE R t = 4.7 k f i R2 = 4.7 kO • C om plem entary to G A 1L3M ABSOLUTE M A X IM U M RATINGS M axim um Voltages and C urrents T a = 25 °C

EC20QS02L

Contextual Info: SCHOTTKY BARRIER DIODE EC20QS02L 2.2A/ 20V FEATURES o Surface Mounting Device 2.21087 5.31.209) 1.8 .Q71) - 4.7(.185V o Low Forward Voltage Drop - _ 4.7Ç168)— 1 [ o Low Power Loss, High Efficiency 4.3tf655 . 0.2(.008) \ 1.7(.Q67) r"?| 1-W 2.7U 06)

Contextual Info: — 5 ? • 5 / — h - NEC C o m p o u n d T ran sistor m ^ T t v r x BA1 L3M i t <8 O / ^ T è l * J i i L t i - 'i t o R, =4.7 kQ, R2= 4.7 k iJ O BN 1L3M > 3 > -r Ij / > ? IJ f T" è i 1“ ( T a = 25 ° o fé # » * :* :* # n m «ft H't 7/ tì: XM W &

Contextual Info: J D I E L E C T R I C : 116 Series SLCs Series / Case Size L & W Cap Cap (pF) Code 116 R .015 (.381) nom. 4.7 to 18 pF Tol.: K, M 116 S .018 (.457) nom. 6.8 to 18 pF J, K, M 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43

Contextual Info: BCR562 PNP Silicon Digital Transistor • Switching circuit, inverter circuit, driver circuit 2 3 • Built in bias resistor R1= 4.7 kΩ, R 2= 4.7 kΩ 1 C 3 R1 R2 1 2 B E EHA07183 Type BCR562 Marking XUs Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings

TT 46 N 12 LOF

Abstract: MX 0542 CL 2181 ic TT 46 N 16 LOF mmi 2740 02B2 PA33 TC-6168 6168 sc
Contextual Info: -y -57 . S/ 1^ NEC IS-ê- ^ > > 7.9 Compound Transistor iï f /v r* AA1L3M f t t t F*3JgNP N i »J□ > & m 7121*1 o y<y[ 7 x i f f i £ l*3j& L T ^ -fi : mm i-0 ( R i = 4.7 kû, R 2= 4.7 kû) o A N 1 L 3 M t 3 >-7° 'J / y 9 'J T f ê f f l ' C ë i i ~ 0

Contextual Info: • Type T491 - Chips Solid Tantalum Capacitors MallorY Cap /xF ‘ Cap Tol Case Code - -EIA/ *r IECQ 35 WVDC @ +85°C 23 WVDC @ +125°C + + + + + 0.1 0.15 0.22 0.33 0.47 0.47 0.68 1.0 1.5 2.2 3.3 4.7 4.7 6.8 10 15 22 10% 10% 10%

Contextual Info: DESCRIPTION 4.7 0.165 ir 10.2(0.4) BD437 is silicon epitaxial-base NPN power transistor, intended for use in medium power linear and switching applications. ¡ 6.0 (0.63) TTT -1 .4(0.55) 6.6(0.26) 4.7(0.185) _r J r —I 2 .2 \ * (0,09) \ 1.4(0.055) lc.4 (0.49)MIN.

Contextual Info: Tr 1 ra ns sloi : Digital Transistor Arrays Includes Resistors Dimensions (Unit: mm) DT5A143E DT5C143E Vr, (V) In (m A ) V „(V ) Id(m A) 4 7 -5 0 -1 0 0 50 20- -5 -1 0 4,7 Ri (k £ i) R? ( k ii ) 4.7 4.7 Pc (mW/unit) (Ta = 25C ) G, 50 100 50 20 - 5 10

C1608X5ROJ475K

Abstract: tdk capacitors C1005X5R1A105K
Contextual Info: V 0 U T : 1-5V V |N = 3 .0 V to 5.5 V - • Iq u t u P to 250 V|N V oU T C|N - L 1 \xF T LM2771 G ND m- C1 + EN C 1- C apacitors: 1 |uF - T D K C 1 00 5 X 5 R 1 A 10 5K 4.7 jaF - T D K C 1 6 0 8 X 5 R 0 J47 5 K o r e qu iva le nt - CoUT " 4.7 aF I 1 1C fly\xF

N30 toroid

Abstract: siferrit t42 Toroids Epcos broadband transformers N26 core transformer B66307F0000X146 FAL0487-9 FAL0666-Y epcos t35 Ring cores N30 toroid epcos
Contextual Info: Ferrites Core E 16/8/5 B66307F Preliminary data „ Ungapped version 4.7 _ 0.4 _ 0.5 16 +0.7 1.87 mm-1 37.6 mm 20.1 mm2 19.4 mm2 756 mm3 g = = = = = 5.7+0.6 Σl/A le Ae Amin Ve 8.2 _ 0.3 Magnetic characteristics per set 4.7 _ 0.3 11.3+0.6 FEK0096-R Approx. weight: 3.6 g/set

transistor f630

Abstract: A-RV06 SI11E XR 2271 JTS03 sl 0565 r JT MARKING F630 h082 transistor bf 244
Contextual Info: NEC z r — S7 • S'— h C o m p o u n d T ra n sisto r FA1L3M Îâ iJ t F * 3 Îic N P N x b 0^ + ' > T ; P ^ ' > ' ; z ] > h ^ ^ X ^ ! $ « ^ - ÎÈ o / M T x f f i i Æ I mm 2.8 + 0.2 ÿ f l l L t i ^ t o 0.65- 1.5 (Ri = 4.7 k£2, R2= 4.7 kQ) o FN1L3M ¿ 3 > 7 i ) / / ^ ' J TWffl f S j t

Contextual Info: KSR2101 FNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, >4.7, R jM T H l) • Complement to KSR 1101 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t)

1003c

Abstract: KBU BRIDGE RECTIFIER
Contextual Info: F a r n e ll COMPONENTS KBU1001 KBU1007 thru S IN G L E P H A S E 10 A M P S S IL IC O N BRIDG E RECTIFIERS VOLTAGE RANGE 50 to 1000 Volts CURRENT 10.0 Amperes KBU FEATURES •280 7.2 .260 (6.5) .185(4.7) (4.7) M — H .165 (4.2, I I .9 3 5 (2 3 .7 ) J 9 S (2 2 .7 )

Contextual Info: FJN4309R PNP Epitaxial Silicon Transistor Features • Switching Circuit, Inverter, Interface Circuit, Driver Circuit • Built-in Bias Resistor R = 4.7 kΩ • Complement to FJN3309R Application • Switching Application (Integrated Bias Resistor) Equivalent Circuit