R 4.7 K Search Results

Contextual Info: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)

A30R

Abstract: A30V S30R S30V
Contextual Info: P R E C I S I O N T H I N F I L M T E C H N O L O G Y Center Tap Chip Resistor S30R/A30R and S30V/A30V Series FEATURES • 30 Mil Square Size. • Resistance Range : Silicon Substrate Equal value - 4.7 ohms to 1M total Unequal value - 4.7 ohms to 500K per resistor

A09t

Contextual Info: 4 3 V1.1 SYM A A 14.0 DISCRETION ••C U S T O M E R 12.9 DATE D R A W IN G 2 REVISIONS APPROVED SYM A A 1 DISCRETION DATE APPROVED F O R R E F E R A N C E O N L Y , S A M P L E S A P P R O V A L A R E R E Q U IR E D !! 010.2 □ □ □ K/ 2.00 0.4 4.7

Contextual Info: PART NUMBER: 475DER2R5SGU SUPERCAPACITOR P a rts a r e R o H S c o m p lia n t E L E C T R IC A L S P E C IF IC A T IO N S Capacitance: 4.7 F Tolerance: -20 % , +50 1 Tem perature Range: -25°C to +70°C WVDC: 2.5 Volts DC ESR: 180 Ohms at 20°C and 1 kHz

D-68623

Abstract: HTZ260G14K HTZ260G16K HTZ260G19K HTZ260G22K
Contextual Info: HTZ260G Series High Voltage Diode Rectifier Module IF AV = 4.7 A VRRM = 22400 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ260G22K HTZ260G19K HTZ260G16K HTZ260G14K 22400 19600 16800 14000 23800 21000 18200 15400 CIRCUIT DIAGRAM LARONTROL

2SK3288

Abstract: 3V02 DSA003644
Contextual Info: 2SK3288 Silicon N Channel MOS FET High Speed Switching ADE-208-803 Z 1st.Edition. June 1999 Features • Low on-resistance R DS = 2.7 typ. (VGS = 10 V , ID = 50 mA) R DS = 4.7 typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (MPAK)

transistor JSW

Contextual Info: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable

G9014

Contextual Info: ISSUED DATE :2004/11/10 REVISED DATE : G9014 N P N E PI TA XI A L T R AN S I S TO R Description The G9014 is designed for general purpose amplifier applications. Package Dimensions D TO-92 E A S1 b1 Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36

Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE GA1 L3N M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors Built-in TYPE in millimeters Ri = 4.7 kSl R 2 = 1 0 k£2 ABSOLUTE M AXIM UM RATINGS Maximum Voltages and Currents Ta = 25 ’C

Contextual Info: 4 3 V1.1 I SYM A A DISCRETION DATE 2 REVISIONS APPROVED SYM A A 1 DISCRETION DATE APPROVED • •C U ST O M E R DRAW ING FOR R E F E R A N C E ONLY, S A M P L E S A P P R O V A L A R E REQ U IRED!! 12.9 14.5 □ □ □ D V 2.00 0.4 4.7 5.5 PCB LAYOUT BOTTOM VIEW

smd diode marking U10

Abstract: Diode marking TY smd diode marking B3 smd diode HB
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF30SC4M u^hàLÌ°- M 40V m Feature a <SMD • Tj=150°C 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Small-PKG • P rrsm DC/D C 4.7 Main Use it 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game, Office Automation

Melody 7930

Abstract: 7930 2SA684 070Q 2SA683 2SC1383 2SC1384 R510 1070l
Contextual Info: — 7 9 3 0 CM OS M ELO DY IC 0 -3 ' £ r^-niÆ il vc'm |7U K « # 3g « # 1 .0 7 0 + -L ' kQ Rvï -5 0 kQ Ru R3 120 kQ R2 5 1 -1 5 0 kQ Ri 510 kQ C; 4.7 *F c2 c3 c4 c5 0.1 m 3.r„t-*sbs*>{t-3 î t 0 * f 0.0 1 -0 .0 4 7 a F o . o K & i S r c L ^ i 'c ¿

SSL-LX507F3YD

Contextual Info: UNCONTROLLED DOCUMENT REV, A B PART NUMBER REV. SSL—LX507F3YD B E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #1 01 1 2 & #101 13. 4.16 .96 6.4.01 E.C.N. #10BRDR. & REDRAWN IN 3D. 0 4.7 5 [00.187: + ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMET[R

SRP1250

Contextual Info: *R *RoHS oH C S OM CO P M LIA PL N IA T NT Features The SRP1255 series is currently available, although not recommended for new designs. The SRP1250 series is preferred. • Shielded construction ■ Unit height of 5.4 mm ■ Inductance range: 0.68 µH to 4.7 µH

74V1T08

Abstract: 74V1T08S
Contextual Info: SGS-THOMSON 74V1T08 M IM i[L[I gïïlHΩiD(3S SINGLE 2-IN PU T AND GATE P R E L IM IN A R Y D A T A . . . . . . HIGH SPEED: tPD = 4.7 ns (TYP.) at VCc = 5V LOW POWER DISSIPATION: Ice = 1 |xA (MAX.) at TA = 25 °C COMPATIBLE WITH TTL OUTPUTS: V ih = 2V (MIN), V il = 0.8V (MAX)

Contextual Info: PART NUMBER: 475DER2R5SGU SUPERCAPACITOR P a rts a re R o H S c o m p lia n t ELEC TR IC AL SPECIFICATIONS C apacitance: 4.7 F T ole ra n ce: -15 % , +10 % T e m p e ra tu re range: -25°C to +70°C WVDC: 2.5 Volts DC ESR AC : 180 Ohms at 1 kHz and 20°C

WH4004A

Abstract: WH4004
Contextual Info: Character 40x4 W H 4 0 0 4 A D/me/ts/on draw/riff 2.54 9.3 M A X "4.7 1.6 LE D B/L E L or NO B/L /tfecfranica/ Osta Feature Graphic type 1.5x8 dots includes cursor Item S tandard Value Module Dimension 190.0x54.0 mm Viewing Area 147.0x29.5 mm 2. B uilt- in contro lle r Samsung KS 0066 or Equivalent

Contextual Info: 1 0805 Size Thermistor Positive Temperature Coefficient Temp miniReel Order W /Y (°C) @ 4.7 KQ Number 2 5 0 p c. 625-002 R eel 625-003 95 °C 115°C 135°C 425-001 10Qpc 425-002 Bag 425-003 p e c i i i c a t i o n s h- 625-001 & ± T 95°C 115°C 135°C

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FOR ALL CO P Y R IG H T B Y TYCO E LE C TR O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A TIO N . 6 .3 5 [-2 5 0 ] D 4 .8 3 4.7 2 .190 186 •1 o 1.14 [.0 4 5 ] n 0 .7 6 — [.0 3 0 ]

SSL-LX507F3SID

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L -L X 5 0 7F 3 S ID 0 4.7 5 [00.187: ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 25‘ C PARAMET[R MIN PEAK WAVELENGTH UNITS 2.0 VIEWING ANCLE Z .5 Vf 1 DO Vr mcd 60 2x theta EMITTED COLOR: RED EPO XY LENS FINISH:

W7NA90

Abstract: 7NA90 STH7NA90F STH7NA90FI STW7NA90 W7NA DSA0012213
Contextual Info: STW7NA90 STH7NA90FI  N - CHANNEL 900V - 1.05Ω - 7A - TO-247/ISOWATT218 FAST POWER MOSFET TYPE STW 7NA90 STH7NA90F I • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 1.3 Ω < 1.3 Ω 7 A 4.7 A TYPICAL RDS(on) = 1.05 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

B & R Automation

Contextual Info: Super Fast Recovery Diode Single Diode m fm DF10L60 OUTLINE Unit-mm Weight 1.5g Typ Package : STO-220 10.2 6 0 0 V 10 A Feature • SM D • SMD • High Voltage • trr=50ns 1 r a lî E E • trr=50ns 4.7 Main Use - PFC • PFC(Power Factor Correction)

Contextual Info: 11 m = su ìi: Ì # 'fe %- # . * m M ~ :§ S c - > *m nm 5V 2 + 0 .2 A 2 x500 V 4 HF ffi& fc fê fa ia SI'iEttlijÍÍ 4.7 K Q ÿ p / ]^ 122mA IföUi 2 — X ì'é i 4- r o e-rofö ® :* * m m jE (~ j£ - > 5.5 V & / M T *® JB i < ~ í £-> 4.5 V 1350 V

Contextual Info: t tecl1 InNET TECHNOLOGIES T0335S Electrical E L E C T R IC A L S P E C IF IC A T IO N S REV. 02 TURNS RATIO : 1 - 1 0 :2 - 9 :4 - 7 :5 - 6 1 : 1 : 1 : 1 ±3 % INDUCTANCE: 1 -1 0 = 2 -9 = 4 -7 = 5 -6 3.3 mH MIN. @ 0.01V, 100KHz 4.7 mH MIN. @ 0.01V, 100KHz