R 256 D Search Results

48C892

Contextual Info: Te M i e S e m i c o n d u c t o r s MARC4 Product Overview ROM x 8 Test R O M x 8 RAM x 4 M43C505 M44C31» M44C588# M44C26Ö M44C090# M44C092# 4096 4096 9216 4096 2048 4096 - 1024 1024 1024 512 1024 253 256 256+256 256 192 256 64 |C 890] (64) [C 892| 12

Contextual Info: 3*o SGS-THOMSON M3488 256 x 256 DIGITAL SWITCHING MATRIX P R E L IM IN A R Y D A T A • 256 INPUT AND 256 OUTPUT CHANNEL CMOS DIGITAL SW ITCHING MATRIX COM ­ PATIBLE WITH M088 ■ BUILDING BLOCK DESIGNED FOR LARGE CAPACITY ELECTRONIC EXCHANGES, SUB­ SYSTEMS AND PABX

MACH5-256

Abstract: pj5n
Contextual Info: COM’L: -7/10/12/15 P R E L IM IN A R Y IND: -10/12/15/20 AMD£I The MACH5-256 M AC H 5-256/68-7/10/12/15/20 M ACH5-256/104-7/10/12/15/20 M ACH5-256/120-7/10/12/15/20 MACH5-256/1 60-7/10/12/15/20 Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS

Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR 256 X 4 Static R /W R A M Features Functional Description • 256 x 4 static RA M for control store in high speed computers T he CY7C123 is a high perform ance CM O S static R A M organized as 256 w ords x 4 bits. E asy m em ory expansion

512x8 PROM

Abstract: 93425A Scans-00110446 29660 s m 475
Contextual Info: Microcomputer Components Type Description 93411 256 x 1 R A M Output Typical Power Dissipation mW M a x .1 Access Time (ns) OC 475 55 C 16 65 M 16 Available Packages3 Temp 2 Range No. of Pins u □ X Q_ zo o 256 x 1 R A M OC 475 45 C 16 X * 93421 256 x 1 R AM

ST72331

Abstract: ST72331J2 ST72331J4 ST72331N2 TQFP44 TQFP64
Contextual Info: ST72331 8-BIT MCU W ITH 8 TO 16K R OM /OTP/EPROM , 256 EEPROM , 384 TO 512 BYTES RAM, ADC, W DG, SCI, SPI AN D 2 TIM ER S P R ELIM IN A R Y DATA • User Program Memory ROM/OTP/EPROM : 8 to 1 6K bytes ■ User EEPROM: 256 bytes ■ Data RAM: 384 to 512 bytes including 256 bytes

D8243

Abstract: DS2430 DS243C DS2430Z 20-PIN DS2430E dallas ds2430
Contextual Info: DS2430 P R E L IM IN A R Y D A L L A S s e m ic o n d u c to r DS2430 256-Bit Shadow RAM with 64-Bit ID PIN ASSIGNMENT FEATURES • 256 bits of scratchpad SRAM memory (one 32 byte page) • 256 bits of non-volatile EEPROM user memory avail­ able for storage of data (one 32 byte page)

Contextual Info: »1^ ADVANCED INFORMATION •' r CYPRESS SEMICONDUCTOR CY7C377 256-Macrocell Flash PLD Features Functional Description • 256 macrocells in 16 logic blocks • 256 I/O pins • 6 dedicated inputs including 4 clock pins • No hidden delays • High speed

Contextual Info: R XCR3256XL 256 Macrocell CPLD DS013 v2.0 November 20, 2002 14 Preliminary Product Specification Features Description • Low power 3.3V 256 macrocell CPLD • 7.5 ns pin-to-pin logic delays • System frequencies up to 154 MHz • 256 macrocells with 6,000 usable gates

XCR3256XL-10TQ144I

Abstract: XCR3256 XCR3256XL-10TQ144C FT256 PQ208 TQ144 XCR3256XL XCR3256XL-7PQ208C XCR3256XL-7TQ144C CS280
Contextual Info: R XCR3256XL 256 Macrocell CPLD DS013 v2.3 August 21, 2003 14 Preliminary Product Specification Features Description • Low power 3.3V 256 macrocell CPLD • 7.5 ns pin-to-pin logic delays • System frequencies up to 154 MHz • 256 macrocells with 6,000 usable gates

L16 eeprom

Abstract: FT256 PQ208 TQ144 XCR3256XL CS280 DS012 DS013
Contextual Info: R DS013 v1.8 April 19, 2001 XCR3256XL 256 Macrocell CPLD 14 Preliminary Product Specification Features Description • Lowest power 256 macrocell CPLD • 7.5 ns pin-to-pin logic delays • System frequencies up to 140 MHz • 256 macrocells with 6,400 usable gates

Contextual Info: R XCR3256XL 256 Macrocell CPLD DS013 v2.2 July 15, 2003 14 Preliminary Product Specification Features Description • Low power 3.3V 256 macrocell CPLD • 7.5 ns pin-to-pin logic delays • System frequencies up to 154 MHz • 256 macrocells with 6,000 usable gates

Contextual Info: C T SCS-THOMSON * 7 / ^ D g ^ @ [lt[l T r [E i(Q iD (g i M 3 4 8 8 256 x 256 DIGITAL SWITCHING MATRIX PR ELIM INARY DATA • 256 INPUT AND 256 OUTPUT CHANNEL CMOS DIGITAL SWITCHING MATRIX COM­ PATIBLE WITH M088 ■ BUILDING BLOCK DESIGNED FOR LARGE

TMS44C256

Abstract: tms44
Contextual Info: TMS44C256 262 144-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY SMGS256C x DQ1 [ 1 Single 5-V Supply 10% Tolerance T M S 44 C 256 -60 T M S 44 C 256 -70 T M S 44 C 256 -80 T M S 44 C 256 -10 TM S 44 C 256 -12 T IM E ACCESS READ T IM E OR ta(R ) ‘ •(C) <a(CA)

GWS mini STD

Contextual Info: FINAL VANTIS BE YO N D P E R FO R M A N C E COM'L: -7/10/12/15 IND:-10/12/14/18 MACH 4-256/MACH4LV-256 High-Performance EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ 208 pins in PQFP, 256 pins in BGA

EF9365P

Abstract: EF9366 1N4143 1N916 EF9365 EF9366P ereas "ascii character generator" serial graphic display EF9365-EF9366
Contextual Info: EF9365 EF9366 S G S -T H O M S O N G * [ R 1 i H H Ê i r G » OÛS MOS GRAPHIC DISPLAY PROCESSOR GDP . SELECTABLE RESOLUTIONS IN BLACK AND WHITE OR COLOR : EF9365 : 512 x 512 (interlaced scan) 256 x 256, 128 x 128, 64 x 64 (non interlaced scan) EF9366 : 512 x 256 (non interlaced scan)

PGA256-R-S19U-1

Abstract: PGA256P
Contextual Info: PIN GRID ARRAY PACKAGE 256 PIN PLASTIC PGA-256P-M01 EIAJ code : ∗PGA256-R-S19U-1 256-pin plastic PGA Lead pitch 100mil Pin matrix 19 Sealing method Resin seal PGA-256P-M01 256-pin plastic PGA (PGA-256P-M01) 0.51 ± 0.13 DIA (.020 ± .005) 49.53 ± 0.25

cots radiation

Abstract: radiation cots 55166RP
Contextual Info: www.spaceelectronics.com 5 5166 R P M u l t i p o r t V R A M Data-transfer function from the DRAM to the serial-data register Up to 45-MHz uninterrupted serial-data streams 256 selectable serial-register starting locations DRAM: 262144 words x 16 bits SAM: 256 words x 16 bits

Contextual Info: •m i c d n d u c t d r t m 256-Bit Serial CMOS EEPROM NM93C06 256-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The NM93C06 devices are 256 bits of CMOS non-volatile electri­ cally erasable memory divided into 16 16-bit registers. They are

sc11486

Abstract: Tseng Labs ET4000 sc11486cv TSENG LABS SC11486CV-50 31/SC11486CV
Contextual Info: ADVANCE INFORMATION s ie r r a se m ic o n d u c t o r SC11481/S C11486/S C11488 32K HiColor /80 MHz 256 Palette For Personal System/2™ 4 4 -P IN PLCC PACKAGE □ 256 W ord Color Palette RAM □ R S-343A /R S-170 Com patible Outputs □ Sync on all T hree Channels

256x4 static ram

Abstract: ram 256 256x4 O2-A2 a7dq 8a5c
Contextual Info: P R E L IM IN A R Y VITESSE VS12G424 Gallium Arsenide 256 x 4 Static RAM SEMICONDUCTOR CORPORATION Distinctive Features • 256 x 4 static RAM for cache and control store applications • Write pulse internally generated from clock edge • Registered address, control and data inputs

cy7c122

Abstract: CY7C122-35DMB cy7c122-25PC 7C122 CY7C122-25SC CY7C122-35 CY7C122-25DC CY7C122-25
Contextual Info: CY7C122 CYPRESS SEMICONDUCTOR 256 x 4 Static R/W RAM Functional Description • 256 x 4 static RAM for control store in high-speed computers The CY7C122 is a high-performance CMOS static R A M organized as 256words by 4 bits. Easy memory expansion is pro­

NMC9802J

Abstract: NMC9802N
Contextual Info: p r e l im in a r y NMC9802 National Semiconductor NMC9802 2048-Bit Parallel 256 x 8 Electrically Erasable Programmable ROM General Description The NM C9802 is a 2048 bit electrica lly erasable program ­ m able read-only m em ory (E2PROM) organized as 256

Contextual Info: ROHM CO LT D i y v MDE D B TÔBÔTT^ 0003347 7 E S RHM ' " :*r Dimensions Unit: mm 4-M3TAP DP7 256— ^8.0 OOOOOOOC OOOOOOOO OOOOOOOO OOOOO OOO OOOOO OOO OOOOO OOO OOOOOOQi •ff < Fig. 3 140.0 256— ¿11.0 röooooooooooooooa oooooooooooooooo oooooooooooooooo