GPA1601
Abstract: GPA1607 QPCN9001 2609B TAIWAN SEMICONDUCTOR
Contextual Info: E TAIWAN SEMICONDUCTOR GPA1601 -GPA1607 RoHS 16.0 AMPs. G lass Passivated Rectifiers TO-22QAC CO M PLIAN C E .412Î1Û.S Mt Features <• 1«{? &?■> Glass Passivated chip junction o High efficiency, Low VF <■ High Current capacity o High reliability <■
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gpa1601-gpa1607o-220actg-220ac+6mil-std-202gpa1607qpcn9001s58280a2609btaiwan semiconductor
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SRA10100
Abstract: marking code .gj MARKING J1A QPCN900I SRA1020 SRA1090 Taiwan Semiconductor Code marking 1F1 VF075
Contextual Info: s SRA1020 -SRA10150 TAIWAN SEMICONDUCTOR 10.0 AMPS. Schottky Barrier Rectifiers TO-220AC RoHS C O M P L IA N C E am ir r o Mai - ni/i 7^— •': - -ST> - ÏÎÎS .!» F e atures <>■ <>■ <> 4- «• 17.X« 44) i./i Low p o w e r loss, high efficie n cy.
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sra1020sra10150or220aco-220ac+10mil-std-202sra1090sra10100qpcn900is58280amarking code .gjmarking j1ataiwan semiconductorcode marking 1f1vf075
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MBRS10H100CT
Abstract: appa appa 17 MBRS10H200CT marking code pj 10h100c
Contextual Info: TAIWAN SEMICONDUCTOR MBRS10H100CT - MBRS10H200CT RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE d 2p a k F e atures 4“ <i•> ❖ <• ❖ ■> 4- <• P ls s lc rrv ile ria l u s s d n a m e s U n d e rw ik '.rs I a b o ra lo ry
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mbrs10h100ctmbrs10h200ctmechans10h20octooct-mbrs10h200ct+5s58280aappaappa 17marking code pj10h100c
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SK86C
Abstract: SK84C SK85C SK82 SK82C SK85
Contextual Info: Preliminary SK82C - SK86C 8.0 AMPS. Surface Mount Schottky Barrier Rectifiers Pb RoHS SMC/DO-214AB COMPLIANCE Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop
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sk82csk86csmc/do-214abrs-481+850mvp-psk82c-sk84csk85c-sk86cqws58280ask84csk85csk82sk85
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