QS8M Search Results

QS8M11

Abstract: 25CTr1 qs8m
Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (8) (7) (6) (5) (1)

Contextual Info: QS8M12 Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Dimensions Unit : mm  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5)

QS8M11

Contextual Info: 4V Drive Nch + Pch MOSFET QS8M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (8) (7) (6) (5) (1) (2) (3) (4)

Contextual Info: QS8M13 Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Dimensions Unit : mm  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5)

Contextual Info: QS8M51 Data Sheet 4V Drive Nch + Pch MOSFET QS8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).

Contextual Info: QS8M31 60V Nch+Pch Power MOSFET Datasheet l Outline Symbol VDSS RDS on (Max.) ID PD Tr1:Nch Tr2:Pch 60V TSMT8 -60V 112mΩ 210mΩ ±3A ±2A 1.5W l Features 1) Low on - resistance.

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Dimensions Unit : mm  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD QS8M11 Preliminary Power MOSFET DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL DESCRIPTION „ The UTC QS8M11 uses UTC’s advanced technology to provide the customers with low voltage drive, etc. The UTC QS8M11 is suitable for switching.

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Dimensions Unit : mm  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2)

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Dimensions Unit : mm  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2)

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M12 Dimensions Unit : mm  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (8) Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (7) (6) (5) (1) (2)

Contextual Info: Data Sheet 4V Drive Nch + Pch MOSFET QS8M51  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET  Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. 2) Low voltage drive (4V drive). 3) Small surface mount package (TSMT8).

LC3564Q-10

Abstract: sanyo vcc 3924 WC-260 LC3564Q LC3564Q-70 LC3564QM70 LC3564QM
Contextual Info: I Ordering number EN 3924B LC3564Q, QM, QS CM OS LSI 64 Kbit 8192 x 8 CMOS Static RAM Pin A ssign m e n t O verview LC3564Q scries dcviccs are silicon-gate, CMOS static RAMs configured as 8192 x 8 bits. They incorporate an output enable for high-speed memory access, two chip