QS6J1 Search Results

Contextual Info: 1.5V Drive Pch+Pch MOSFET QS6J11 zDimensions Unit : mm zStructure Silicon P-channel MOSFET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching. 3) Low voltage drive (1.5V).

Contextual Info: QS6J11 Dual Pch -12V -2.0A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 105mW ID -2A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate 2) Built-in G-S Protection Diode.

Contextual Info: QS6J11 Dual Pch -12V -2.0A Power MOSFET Datasheet lOutline VDSS -12V RDS on (Max.) 105mW ID -2A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate 2) Built-in G-S Protection Diode.

Contextual Info: QS6J1 Transistors Small switching −20V, −1.5A QS6J1 !External dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 !Features 1) The QS6J1 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package.

Contextual Info: QS6J11 Datasheet Dual Pch -12V -2.0A Power MOSFET lOutline VDSS -12V RDS on (Max.) 105mW ID -2A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate 2) Built-in G-S Protection Diode.

N10594

Abstract: IS3938
Contextual Info: SPICE PARAMETER QS6J1 by ROHM TR Div. * QS6J1 PMOSFET model * Date: 2006/09/11 * This model includes a diode between drain and source. *D G S .SUBCKT QS6J1 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=13.194E-6

mosfet equivalent

Contextual Info: QS6J1 Transistors Small switching −20V, −1.5A QS6J1 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (5) (4) (3) zApplications Switch 0.85 Each lead has same dimensions Abbreviated symbol : J01 zStructure Silicon P-channel MOSFET zEquivalent circuit

Contextual Info: QS6J1 Transistors Small switching −20V, −1.5A QS6J1 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (5) (4) (3) zApplications Switch 0.85 Each lead has same dimensions Abbreviated symbol : J01 zStructure Silicon P-channel MOSFET zEquivalent circuit

ROHM QS6J1

Abstract: QS6J1
Contextual Info: QS6J1 Transistors 2.5V Drive Pch+Pch MOS FET QS6J1 zStructure Silicon P-channel MOS FET zExternal dimensions Unit : mm TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) Two Pch MOS FET transistors in a single TSMT6 package. 2) Low on-state resistance with a fast switching.

Contextual Info: TYPE PRODUCTS TSMT6 1.TYPE QS6J1 2.STRUCTURE SILICON 3.APPLICATIONS SWITCHING PAGE QS6J1 1/4 P-CHANNEL MOS FET 4.ABSOLUTE MAXIMUM RATINGS [Ta=25oC] 《 MOSFET 》 DRAIN-SOURCE VOLTAGE VDSS ・・・ -20V GATE-SOURCE VOLTAGE VGSS ・・・ ±12V CONTINUOUS

Contextual Info: QS6J11 QS6J11 Datasheet Dual Pch -12V -2.0A Power MOSFET lOutline VDSS -12V RDS on (Max.) 105mW ID -2A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate 2) Built-in G-S Protection Diode.

RSD130P10

Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
Contextual Info: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

RSD130P10

Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
Contextual Info: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.

2sk3808

Abstract: 2SK3807 2sk3805 2sk3806 Shortform Transistor Guide sp8m3 RSQ035P03 RTQ035P02 FET SP8M4 sp8m5
Contextual Info: Transistors MOS FET 1. Can be used with automatic placement machines. Available in a wide variety of packages. Like bipolar transistors, taped MOS FETs are available for assembly lines using automatic placement equipment. 2. MOS FETs operating from 4 volts and 2.5 volts

sp8k10s

Abstract: SP8K10 rsd220n06 RRS100P03 RTR011P02 SP8M41 RRS075P03 RRR035N03 rss065n06 R6010ANX
Contextual Info: 2009 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.

2sc5922

Abstract: 2SC5734 2SC5917 2SC5989 2SA2054 2sc5919 2SC5987 2SC5734K 2SC5918 2SC5982
Contextual Info: -Transistors ◆MOS FET Series ◆Low Vce sat Super-mini Transistors Series ◆Strong Discharge Voltage/ High Speed Switching Transistors Series ◆Muting Transistors Series MOS FET Series Power MOS FET Series Series Features Low RDs(on) High ESD capability

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

RQW130N03

Abstract: rqw200n03 sp8k10s mosfet rqw 130 SP8K10 RQA200N03 mosfet rqa 130 RQW130 RQA130N03 RQW 130
Contextual Info: Product Catalog MOSFETs Discrete Semiconductors 2007-Dec. www.rohm.com ROHM MOSFETs In the society these days, MOSFET is getting rapidly popular as a key-device in many applications, such as mobile phones and automotive electronics. ROHM will keep developing new devices exactly following the