QQ17S Search Results

Contextual Info: N AMER P H IL I P S / D I S C R E T E BSE D Jl ftSHlHl QQ17S73 1 • BFQ51C T - 3 /- / 7 P-N-P 2 GHz WIDEBAND TRANSISTOR P-N-P transistor in a sub-miniature H E R M E T IC A L L Y S E A L E D micro-stripline envelope. It is primarily intended for use in u.h.f. and microwave amplifiers such as aerial amplifiers, radar systems, oscilloscopes,

Contextual Info: 32E D • û23b3EQ QQ17S11 ö I SI P PZTA 63; PZTA 64 PNP Silicon Darlington Transistors SIEM ENS/ SPCL-. SEM ICON DS For general A F applications High collector current High current gain Complementary types: P Z T A 1 3 / 1 4 NPN Type M arking O rdering c o d e (12-m m ta p e ) Package*

4502BN

Abstract: qml-38535 4502B CDFP4-F16
Contextual Info: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION LTR REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REV 10 SHEET PREPARED BY

Contextual Info: u v m L T C 1 5 3 8 -A U X / L T C 1539 . TECHNOLOGY D ual High Efficiency, Low Noise, Synchronous Step-Down S w itching R eg ulators F€ATUft€S D C S C R IP T IO n • M aintains Constant Frequency at Lo w Output Currents ■ Dual N-Channel M O S F E T Synchronous Drive

Contextual Info: DS243ÛA DALLAS SEMICONDUCTOR FEATURES DS2430A 25 6-B it 1- -W ire EEPR O M PIN ASSIGNMENT • 256-bit Electrically Erasable Programmable Read Only Memory EEPROM plus 64 -bit one-tim e pro­ grammable application register TO -92 TSOC PACKAGE D A LLA S

Contextual Info: M B86936 FUJITSU 930 SERIES 32-BIT RISC EMBEDDED PROCESSOR APRIL, 1996 • On-chip clock generator circuit FEATURES • JTAG test interface • 25 and 50 MHz versions • Emulator support hardware • Clock doubler for 50 MHz version • Single vector trapping

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

SiEMENS PM 350 92

Contextual Info: BSE D • 023b32Q 0 0 1 7 2 ^ 2 PNP Silicon Transistors for High Voltages S IE M E N S / SPCL-. 1 WtZIP SMBTA92 SEMICONDS_ SMBTA93 • High breakdown voltage • Low collector-emltter saturation voltage • Complementary types: SMBTA 42, SMBTA 43 NPN

Contextual Info: Ordering number : EN4795C CMOS LSI No. 4795C LC321664AJ, AM, AT-80 1 MEG 65536 words x 16 bits DRAM Fast Page Mode, Byte Write Overview Package Dimensions The LC321664AJ, AM , AT is a CMOS dynamic RAM operating on a single S V power source and having a 65536-word x 16-bit configuration. Equipped with large

smd transistor marking t02

Abstract: qml-38535 4009UB CDFP4-F16
Contextual Info: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 8 PREPARED BY Rick C Officer

rca 17556

Abstract: 17556 power amplifier transistor 17556 17556 transistor 17556 SOLID STATE 17556 17556 RCA 17556 transistor rca 17556 BD801 BD795
Contextual Info: QÎ 3875081 G E . File Num bei' SOLID STATE DE | 3 f l 7 S G f l l □017554 B | ~ 01E 1242 17554 D f-S y-// BD795, BD796, BD797, BD798, BD799, BD800, BD801, BD802 Epitaxial-Base, Silicon . N-P-N and P-N-P VERSAWATT Transistors TERMINAL DESIGNATIONS G e n e ra l-P u rp o s e M e d iu m -P o w e r T y p e s fo r

Contextual Info: Thn% H EW LETT» mL'EM PA CKARD Schottky Barrier D iodes for M ixers and D etectors Technical Data 5082 2817/18 - Features • Low Noise Figure • High Burnout Rating 1 W RF Pulse Power Absorbed • Rugged Design • High Sensitivity O utline 15 0.41 .016

Contextual Info: irdering number: EN5421 Monolithic Linear IC LA8518NM SA iYO I Signal Processor for Cordless Telephone Base Sets Functions Package Dimensions Speech network block • 2-wire/4-wire conversion • Line driver • Transmitting amplifier • Receiving amplifier with ATT