QP130 Search Results

OP133

Abstract: OP130 OP131 OP132 OP593 OP598 OP830 EHP 16 B15d
Contextual Info: b7Rö5flD D D0 2S S1 P roduct B ulletin OP130 m _ _ . OPTEK May 1996 G aA s Hermetic Infrared Emitting Diodes Types QP130, OP131, OP132, OP133 Features A b so lu te M axim um R atings {T a = 25° C unless otherw ise noted • TO-46 hermetically sealed package

Contextual Info: Product B ulletin O P130W b7TßSßO 00025S3 öbl “ OPTEK M ay 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130W, 0P131W, OP132W, OP133W .a Features A b so lute M axim um Ratings T a = 25 ° C unless otherw ise noted • Wide irradiance pattern • Enhanced temperature range

OP830WSL

Abstract: K6200
Contextual Info: OPTEK 0 Product Bulletin OP130W April 1993 GaAs Hermetic Infrared Emitting Diodes Types QP130W, OP131W, OP132W, OP133W Features Absolute Maximum Ratings (Ta = 25°C unless otherwise noted • Wide irradiance pattern • Enhanced temperature range • Mechanically and spectrally matched

P130W

Contextual Info: 0 O P T E K Product Bulletin OP130W May 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130W, OP131W, OP132W, OP133W Features Absolute Maximum Ratings (T a = 25° C u n le ss otherwise noted • Wide irradiance pattern • Enhanced temperature range

Contextual Info: P roduct Bulletin O P 130 fc^aSfiO D0D2SS1 m • OPTEK < M ay 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130, OP131, OP132, OP133 Features A b so lute M axim um Ratings T a = 25 ° C unless otherw ise noted • TO-46 hermetically sealed package

OP133W

Abstract: DP130 0P131W K6200 OP130W OP131W OP132W OP830WSL
Contextual Info: — b7TflSfl O 00025S3 fibl u^i v OPTEK Product Bulletin O P130W M ay 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130W, 0P131W, OP132W, OP133W .a Features A b so lute M axim um R atings T a = 25° C unless otherw ise noted • Wide irradiance pattern

IR p133

Contextual Info: @ OPTEK Product Bulletin OP130 May 1996 GaAs Hermetic Infrared Emitting Diodes Types QP130, 0P131, OP132, OP133 Features Absolute Maximum Ratings (T a = 25° C u n le ss otherwise noted • TO-46 hermetically sealed package • Mechanically and spectrally matched

QP802S

Abstract: QP803SL K5251 OP130 OP231 OP801SL OP802SL OP803SL OP805SL QP805SL
Contextual Info: OPTEK Product Bulletin O P 8OOSL J u n e 1996 NPN Silicon Phototransistors Types OP 8OOSL, O P 8OISL, QP802SL, QP803SL, QP804SL, OP8Q5SL Features • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range T O -18 hermetically sealed package

Contextual Info: 0 .Q P I E K Product Bulletin O P 8 OOWSL June 1996 NPN Silicon Phototransistors Types OP 8 OOWSL, OP 8 OIWSL, OP8Q2WSL Features Absolute Maximum Ratings T a = 25° C unless otherwise noted • • • • • Collector-Emitter Voltage. 30 V

equivalent of SL 100 NPN Transistor

Contextual Info: OPTEK Product Bulletin OP8OOSL June 1996 NPN Silicon Phototransistors Types OP8QOSL, QP801SL, OP8Q2SL, OP8Q3SL, OP8Q4SL, OP8Q5SL Features • Narrow receiving angle • Variety of sensitivity ranges • Enhanced temperature range • TO-18 hermetically sealed package

K6200

Abstract: Infrared Emitting Diode 0P131W OP130W OP132W OP133W OP830WSL
Contextual Info: OPTEK Product Bulletin OP130W May 1996 GaAs Hermetic Infrared Emitting Diodes Types OP13QW, OP131W, OP132W, OP133W • Wide irradiance pattern • Enhanced temperature range • Mechanically and spectrally matched to the OPÔOOWSL and OP830WSL series devices

OP830SL

Abstract: K9020 OP130 OP231
Contextual Info: Product Bulletin OP830SL OPTEK June 1996 NPN Silicon Photodarlington Type OP83QSL Features Absolute Maximum Ratings T a = 25° C u n le ss otherwise noted • • • • • Collector-Emitter Voltage. 15 V

OP845

Abstract: 2SC141 OP843 OP130 2SC 141 AN 0P845 0P844 0P842
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bT^flSfiO OOOOiat =1 | g Optoelectronics Division TRW Electronic Components Group Product Bulletin 6144 January 1985 U m W NPiy Silicon Phototransistors Types 0P841, 0P842, 0P843, QP844, 0P845 Features i • Collector currents are binned to minimums only

DT3-6

Abstract: triac mw 131 OPI3020 OP13022 PI3021 QPI3023 VDC111 727 triac
Contextual Info: OPTEK TECHNOLOGY INC ObE D | LV'lflSfiQ 000D54D 0 | O p to e le c tro n ic s D iv is io n 1 9 8 7 C o s t S a v e r P r o d u c t! a v M TRW C a |, g E ls c tr o n ic C o m p o n e n t s G r o u p T R W f „ r m re ¡n fo r m a tjo n ! P r o d u c t B u lle tin 5 2 1 4

K9030

Contextual Info: 0 OPTEK Product Bulletin O P830W SL Jun e 1996 NPN Silicon Photodarlington Type OP830WSL .019 (0.48 .016 (0.41) Features A bsolute M axim um Ratings (T a = 25 ° C unless otherw ise noted) • • • • • Collector-Emitter Voltage. 15V

Contextual Info: 0 . OPTEK Product Bulletin OP830SL June 1996 NPN Silicon Photodarlington Type OP830SL Features • • • • • Narrow receiving angle Enhanced temperature range Excellent thermal characteristics T O -1 8 hermetically sealed package Mechanically and spectrally matched