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    QN0406

    Abstract: Application Note ANPS071E smd diode 101a ANPS071E IPD80N04S3-06 PG-TO252-3-11
    Contextual Info: IPD80N04S3-06 OptiMOS -T Power-Transistor Product Summary V DS 40 V R DS on ,max 5.2 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD80N04S3-06 PG-TO252-3-11 QN0406 QN0406 Application Note ANPS071E smd diode 101a ANPS071E IPD80N04S3-06 PG-TO252-3-11 PDF

    QN0406

    Abstract: qn04 ipd80n04
    Contextual Info: Preliminary Data Sheet OptiMOS -T Power-Transistor IPD80N04S3-06 Product Summary V DS 40 V R DS on ,max 5.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPD80N04S3-06 PG-TO252-3-11 QN0406 QN0406 qn04 ipd80n04 PDF