QM30E Search Results
QM30E Datasheets (10)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| QM30E2Y |
|
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Original | 91.29KB | 6 | ||
| QM30E2Y |
|
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Original | 85.37KB | 6 | ||
| QM30E2Y-2H |
|
BJT, Medium Power Switching Transistor, IC 30A | Original | 91.29KB | 6 | ||
| QM30E2Y-2H | Unknown | Power and Industrial Semiconductors Data Book | Scan | 2.2MB | 79 | ||
| QM30E2Y-H |
|
30A - transistor module for medium power switching use, insulated type | Original | 85.38KB | 6 | ||
| QM30E2Y-H | Unknown | Power and Industrial Semiconductors Data Book | Scan | 2.2MB | 79 | ||
| QM30E3Y-2H |
|
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Original | 91.29KB | 6 | ||
| QM30E3Y-2H | Unknown | Power and Industrial Semiconductors Data Book | Scan | 2.2MB | 79 | ||
| QM30E3Y-H |
|
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE | Original | 85.37KB | 6 | ||
| QM30E3Y-H | Unknown | Power and Industrial Semiconductors Data Book | Scan | 2.2MB | 79 |
QM30E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
E80276Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75 |
Original |
QM30E2Y/E3Y-2H E80276 E80271 E80276 | |
cf rh transistorContextual Info: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-H Ic Collector current. 30A Vcex Collector-emitter vo ltag e .600V hFE DC current gain. 75 Insulated Type |
OCR Scan |
QM30E2Y/E3Y-H E80276 E80271 cf rh transistor | |
transistor cayContextual Info: MITSUBISHI TRANSISTOR MODULES 30E 2Y Q M \ / E 3Y - H j MEDIUM POWER SWITCHING USE INSULATED TYPE 3 ! QM30E2Y/E3Y-H • lc • V cex • Hfe Collector current. 30A j Collector-emitter voltage. 600V DC current gain. 75 |
OCR Scan |
QM30E2Y/E3Y-H E80276 E8Q271 transistor cay | |
E80276Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-H • • • • • IC Collector current . 30A VCEX Collector-emitter voltage . 600V hFE DC current gain. 75 |
Original |
QM30E2Y/E3Y-H E80276 E80271 E80276 | |
|
Contextual Info: MITSUBISHI TRANSISTOR MODULES j QM30E2Y/ E3Y-2H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QM30E2Y/E3Y-2H • lc • V C EX Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75 |
OCR Scan |
QM30E2Y/ QM30E2Y/E3Y-2H E80276 E80271 | |
|
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM30E2Y/E3Y-2H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30E 2Y /E3Y-2H Ic Collector current. 30A Vcex Collector-emitter vo ltag e 1000V hFE DC current gain. 75 Insulated Type |
OCR Scan |
QM30E2Y/E3Y-2H E80276 E80271 |