QGS 80 Search Results
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KEMET Corporation USEQGSK3000000Air Quality Sensors Gas Detector Sensor Digital SMD KIT |
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KEMET Corporation USEQGSM1CH4100Air Quality Sensors Gas Detector Sensor Digital SMD CH4 |
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KEMET Corporation USEQGSM1N8L100Air Quality Sensors Gas Detector Sensor Digital SMD Gas NO |
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KEMET Corporation USEQGSMH950100Air Quality Sensors Gas Detector Sensor Digital SMD Board |
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QGS 80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80 |
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IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFPS40N50
Abstract: TO274
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IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFPS40N50 TO274 | |
IRFPS40N50L
Abstract: SiHFPS40N50L IRFPS40N50LPBF
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IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 11-Mar-11 IRFPS40N50L IRFPS40N50LPBF | |
s8143
Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3
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IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3 | |
IRFBG30Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30 | |
IRFPE40Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching |
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IRFPE40, SiHFPE40 2002/95/EC O-247AC 11-Mar-11 IRFPE40 | |
IRFPE50
Abstract: SiHFPE50 IRFPE50PBF
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IRFPE50, SiHFPE50 2002/95/EC O-247AC 11-Mar-11 IRFPE50 IRFPE50PBF | |
IRFBG30Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30 | |
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Contextual Info: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) |
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IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
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Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole |
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IRFPE30, SiHFPE30 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
n 332 abContextual Info: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) |
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IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 n 332 ab | |
IRFPE30Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole |
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IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30 | |
IRF744
Abstract: application irf744 SiHF744 SiHF744-E3
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IRF744, SiHF744 O-220 O-220 18-Jul-08 IRF744 application irf744 SiHF744-E3 | |
IRFBG30
Abstract: IRFBG30PBF SiHFBG30-E3 81145 RD-170 SiHFBG30
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IRFBG30, SiHFBG30 O-220 O-220 18-Jul-08 IRFBG30 IRFBG30PBF SiHFBG30-E3 81145 RD-170 | |
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IRFP344Contextual Info: IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V 0.63 Qg (Max.) (nC) 80 Qgs (nC) 12 Qgd (nC) 41 Configuration • Repetitive Avalanche Rated RoHS • Isolated Central Mounting Hole |
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IRFP344, SiHFP344 O-247 O-247 18-Jul-08 IRFP344 | |
IRFPE50
Abstract: SiHFPE50 47 AB IRFPE50PBF
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IRFPE50, SiHFPE50 O-247 O-247 18-Jul-08 IRFPE50 47 AB IRFPE50PBF | |
IRFPE50Contextual Info: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 |
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IRFPE50, SiHFPE50 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFPE50 | |
IRFBG30Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30 | |
IRFBE20
Abstract: SiHFBE20 SiHFBE20-E3 d1758
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IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE20 SiHFBE20-E3 d1758 | |
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Contextual Info: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 |
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IRFPE50, SiHFPE50 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) |
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IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching |
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IRFPE40, SiHFPE40 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFBE20
Abstract: IRFBE20PbF SiHFBE20 SiHFBE20-E3
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IRFBE20, SiHFBE20 O-220 O-220 18-Jul-08 IRFBE20 IRFBE20PbF SiHFBE20-E3 | |
IRFBE20Contextual Info: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC) |
Original |
IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBE20 | |