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    QGS 80 Search Results

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    KEMET Corporation

    KEMET Corporation USEQGSEAC82180

    Air Quality Sensors Gas Detector Sensor Digital SMD CO2
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    Mouser Electronics USEQGSEAC82180 1,969
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    • 10 $17.25
    • 100 $14.97
    • 1000 $13.04
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    KEMET Corporation USEQGSK3000000

    Air Quality Sensors Gas Detector Sensor Digital SMD KIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics USEQGSK3000000
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    QGS 80 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFPS40N50

    Abstract: TO274
    Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFPS40N50 TO274 PDF

    IRFPS40N50L

    Abstract: SiHFPS40N50L IRFPS40N50LPBF
    Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 11-Mar-11 IRFPS40N50L IRFPS40N50LPBF PDF

    28AB

    Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 11-Mar-11 28AB PDF

    Contextual Info: IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) () VGS = 10 V 0.087 Available RoHS* Qg (Max.) (nC) 380 Qgs (nC) 80


    Original     		IRFPS40N50L, SiHFPS40N50L 2002/95/EC Super-247 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration


    Original     		IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-262) O-263) 12-Mar-07 PDF

    marking s15 diode

    Abstract: s15 diode
    Contextual Info: IRFPE40 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 2.0 Qg (Max.) (nC) 130 • Isolated central mounting hole Qgs (nC) 17 • Fast switching


    Original     		IRFPE40 O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 marking s15 diode s15 diode PDF

    s8143

    Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3
    Contextual Info: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration


    Original     		IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3 PDF

    IRFBG30

    Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBG30, SiHFBG30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFBG30 PDF

    IRFPE40

    Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		IRFPE40, SiHFPE40 2002/95/EC O-247AC 11-Mar-11 IRFPE40 PDF

    IRFPE50

    Abstract: SiHFPE50 IRFPE50PBF
    Contextual Info: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 1.2 Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110


    Original     		IRFPE50, SiHFPE50 2002/95/EC O-247AC 11-Mar-11 IRFPE50 IRFPE50PBF PDF

    IRFBG30

    Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBG30, SiHFBG30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A IRFBG30 PDF

    Contextual Info: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBE20, SiHFBE20 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


    Original     		IRFPE30, SiHFPE30 2002/95/EC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration • Isolated Central Mounting Hole COMPLIANT • Ease of Paralleling


    Original     		IRFPE30, SiHFPE30 2002/95/EC O-247AC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    IRFPE40

    Contextual Info: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		IRFPE40, SiHFPE40 2002/95/EC O-247AC O-247AC 11-Mar-11 IRFPE40 PDF

    IRFPE50

    Abstract: 78A31
    Contextual Info: IRFPE50, SiHFPE50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 200 • Isolated Central Mounting Hole Qgs (nC) 24 • Fast Switching 110 • Ease of Paralleling Qgd (nC)


    Original     		IRFPE50, SiHFPE50 O-247 O-247 12-Mar-07 IRFPE50 78A31 PDF

    Contextual Info: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFBE30

    Contextual Info: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBE30, SiHFBE30 O-220 O-220 12-Mar-07 IRFBE30 PDF

    Contextual Info: IRFP344, SiHFP344 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) VGS = 10 V 0.63 Qg (Max.) (nC) 80 Qgs (nC) 12 Qgd (nC) 41 Configuration • Repetitive Avalanche Rated RoHS • Isolated Central Mounting Hole


    Original     		IRFP344, SiHFP344 O-247 O-247 O-220 18-Jul-08 PDF

    n 332 ab

    Contextual Info: IRFBE20, SiHFBE20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 21 • Simple Drive Requirements Qgd (nC)


    Original     		IRFBE20, SiHFBE20 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 n 332 ab PDF

    IRFPE30

    Contextual Info: IRFPE30, SiHFPE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 Qgs (nC) 9.6 Qgd (nC) 45 Configuration Available • Repetitive Avalanche Rated 3.0 • Isolated Central Mounting Hole


    Original     		IRFPE30, SiHFPE30 O-247 O-247 18-Jul-08 IRFPE30 PDF

    IRF744

    Abstract: application irf744 SiHF744 SiHF744-E3
    Contextual Info: IRF744, SiHF744 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 450 RDS(on) (Ω) Available VGS = 10 V • Repetitive Avalanche Rated 0.63 Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 12 • Ease of Paralleling Qgd (nC)


    Original     		IRF744, SiHF744 O-220 O-220 18-Jul-08 IRF744 application irf744 SiHF744-E3 PDF

    IRFBG30

    Abstract: IRFBG30PBF SiHFBG30-E3 81145 RD-170 SiHFBG30
    Contextual Info: IRFBG30, SiHFBG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 1000 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 80 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRFBG30, SiHFBG30 O-220 O-220 18-Jul-08 IRFBG30 IRFBG30PBF SiHFBG30-E3 81145 RD-170 PDF