QF NPN Search Results

2SD1400

Abstract: cp 06a
Contextual Info: SANYO SEMICONDUCTOR 15E CORP » 1 7Tì7Q 7ti O O DS Qf l l - f '3 3 - 1 3 2SD1400 NPN Triple Diffused Planar Silicon Transistor 2022 Color TV Horizontal Deflection Output Applications 1267B Features: • High brea k d o w n voltage and h i g h reliability

LS164

Contextual Info: LS164 Serial-ln/Parallel-Out Shift Register SERIAL INPUTS ' B [T | B A Qh Q* Qg Qb Qf Qc [ 5 Qc qd Û o 04 [ T j Qb [ V LiJ T he LS164 is a bipolar, NPN, sealed-junction, silico n integrated circu it. It is m anufactured in lowpow er S ch o ttky te ch no lo g y and is available in a

UCN5820A

Abstract: UCN5832A UCN5818AF UCN5832EP
Contextual Info: 5 7 3 - s i ; C N 5832 BiMOS n 32-BIT SERIAL-INPUT, LATCHED DRIVERS UCN5832A LOGIC SUPPLY SERIAL DATAIN GROUND ri" STROBE ¡4 0UT| n_ out2 [~6~ OUTj rr out4 r r out5 r~9_ out6 [JS out7 fu out8 n? out, q T OUT10 nr 0UTU mT out12 Qf outl3 rrT out14 fT? out15 n£

MT8841

Abstract: IN5245B how to interface microcontroller to optocoupler 4N25 MSAN-144 74HC00 B1 capacitor 2u2
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

4n25 optocoupler

Abstract: IN5245B 74hc164 microcontroller relay interfacing Relay QF Philips Electrolytic Capacitor 22uf 250v 4N25 MSAN-144 MT8841 TRTSY-000507
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

IN5245B

Abstract: 4n25 optocoupler Transistor a235 MSAN-144 fsk to RS-232 converter IN524 74HC123 timing Multivibrator 74HC00
Contextual Info:  Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

RELAY-DPDT

Abstract: Multivibrator 74HC00 IN5245B IN4004 diode data sheet DPDT relay 12v fsk to RS-232 converter 4n25 application note 5V 1A DPDT RELAY lcd timing controller IN4004
Contextual Info:  Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

IN5245B

Abstract: transistor u8 2w 5V 1A DPDT RELAY relay logic for elevator control circuit 4N25 MSAN-144 MT8841 EARTH FAULT detector circuit using OP-AMP octal optocoupler
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

4n25 optocoupler

Abstract: METAL DETECTOR using microcontroller IN5245B Multivibrator 74HC00 4N25 MSAN-144 MT8841 microcontroller relay interfacing 74HC14 NAND GATE EARTH FAULT detector circuit using OP-AMP
Contextual Info: Application Note MSAN-144 Applications of the MT8841 Calling Number Identification Circuit ISSUE 1 CONTENTS • Introduction • Applications • How it Works • A Three Pin Interface • General Requirements • Data Transmission Methods and Message Formats

sn76544

Abstract: BUY71 BP 40 Datenblatt TIP 21 transistor TIP 35 transistor TRANSISTOR buy71 2N3440
Contextual Info: BUY71 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T. S C A N N IN G • • V q e x Rating 2200 V Current Rating — 2 Amps Continuous • Fast Switching — tf at 1.5 Amps 0.7 Microsecond Typical @ 25 °C Case Temperature mechanical specification

I12C

Abstract: KSC2758 samsung tuner
Contextual Info: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D | T 'lb M m a OOObTSS fl | NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage

BSY56

Abstract: A1441 BSY55 BSY 56 afe 1000
Contextual Info: BSY 55 • BSY 56 w Silicon NPN Epitaxial Planar Switching Transistors Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF a m plifiers and high sp e e d switches Besondere M erkmale: Features:

BF245

Abstract: "shortwave receiver" shortwave receiver 10,7mhz drm receiver 7808 C4270 SA612 10 MHz 1st IF IC2 LM386
Contextual Info: DDSR1 10,688 MHz 10,712 MHz Oscillator C38 100n C36 C37 C1 100n 1n Oscillator Input X1 SOCKET +12V 7808 REG 7808 10,7 MHz CerRes ANTENNA SFE107 C15 in gnd out R16 100 E1 Regulator Q1 BF245 R1 47k R15 1k L1 L2 L3 0.33µ C2 150 0.39µ C3 270 0.33µ C4 270

Contextual Info: " big ideas in BIG POWER' POWeR- M B P ow erT ech 90 AMPERES PT-7511 SILICON NPN TRANSISTOR M A X IM U M R A T IN G S SYM BO L C o lle c t o r P-5-S-7 V o lt a g e 20Q V V CBO C u L lic it n - E r r in r e i V o lt a g e 2nov v ceC? E m itts i- B a - ie V o lt a g e

QF npn

Contextual Info: DATE 1 -5 -9 8 REVISIONS REV E.C.N. ttL O B R IR ,/ A DRAWING NUM BER REV 0 E D -S T -8 L R 2 A UNCONTROLLED DOCUMENT ELECTRO-OPTICAL CHARACTERISTICS T* =25"C PARAMETER SYMBOL TEST CONDITION COLLECTOR DARK CURRENT Iceo V c e o = 1 OV E e = 0 .5 m w /c m2 COLLECTOR UGHT

Contextual Info: DATE REVISIONS REV 9 -3 0 -9 6 E.C.N. #10247,/ A 1-5-98 E.C.N. ttLOBRIR./ B DRAWING NUM BER REV 0E D -S T -8 L B UNCONTROLLED DOCUMENT E L E C T R O -O P T IC A L CHARACTERISTICS TA = 2 5 'C PARAMETER SYMBOL TEST CONDITION COLLECTOR DARK CURRENT Iceo V ceo= 10V

Contextual Info: KSC5086 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR HIGH DEFINITION COLOR DISPLAY HORIZONTAL DEFLECTION OUTPUT DAMPER DIODE BUILT IN TO-3PF • High Collector-Base Voltage ( V Cb o = 1 5 0 0 V ) • High Speed Switching (tF=0.1jisec Typ) ABSOLUTE MIXIMUM RATING

Contextual Info: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage

MOC119

Contextual Info: MOC119 NPN PHOTOTRANSISTOR AND PN INFRARED EMITTING DIODE . . . Gallium Arsenide Darlington isolation, LED designed high-current transfer cost; such as interfacing controls, o o solid-state High Isolation Vlso optically Transistor coupled ratios, and — e

Contextual Info: SEM ICONDUCTOR TECHNICAL DATA 2N3013JAN, JTX CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 Processed per MIL-S-19500/287 NPN Silicon Small-Signal Transistor dnsigned lor general purpose switching applications M AXIM UM RATINGS y* I,«•»riiii

marking qd sc59

Abstract: rn1425 RN1426
Contextual Info: SILICON NPN EPITAXIAL TYPE RN1421-RN1427 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT +0.5 2 . 5 - 0.3 AND DRIVER CIRCUIT APPLICATIONS. • High Current Type I^(MAX. =800mA) • With Built-in Baias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts Namufacturing Process

2n697

Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5

Contextual Info: E SOLID STATE Optoelectronic Specifications T-li-ZS Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & NPN Silicon Darlington Connected Phototransistor The GE Solid State MCA series consists of a gallium arsenide infrared emitting diode coupled with a silicon photo-darlington

2N3137

Abstract: MM1748A MM1803 MM1748 TO52
Contextual Info: MIMI748, A silicon NPN SILICO N SWITCHING TR A N S IS TO R S NPN SILICO N A N N ULAR SWITCHING TR A N SISTO R S .d e s ig n e d fo r low -voltage, high-speed saturated sw itc h in g ap­ p lica tio n s. • C o lle c to r-E m itte r Su staining V o ltage —