QD30 Search Results

BUK545

Abstract: BUK545-100A BUK545-100B
Contextual Info: N AUER P H I L I P S / D I S C R E T E b'iE J> ^53^31 QD307bS I ME • Product Specification Philips Semiconductors PowerMOS transistor BUK545-100A/B Logic level FET_ _ _ _ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: N APIER PHILIPS/DISCRETE bR E D bbS3R31 QD3042R 4bR • APX Product Specification Philips Semiconductors BUK106-50US BUK106-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

M33 thermal

Abstract: BUK545 BUK545-60A BUK545-60B
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbSB^Bl QD307b0 bt.D « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

SGS100D

Contextual Info: 3GE » m QD30bfl4 4 ^ _ ^ 3 3 - 3 > f Z 7 S G S -T H O M S O N ^ 7# SG S100DA020D " S G S-THOMSON NPN DARLINGTON POWER MODULE • POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS ■ LOW Rth JUNCTION TO CASE ■ FREEWHELING DIODE ■ ADAPTED FOR HIGH POWER SWITCHING

BUT30F

Abstract: BUT30V GCH410 tjg125 BUT30
Contextual Info: 3DE r Z ^ 7 D • 7^2^237 S O N s a QD30372 7 ■ Z S C S - T H O M T h o m s o n B U T 3 0 F # ^ ü Q g i i ! L i ( D i r ^ ® i D ( g i _ B U T 3 0 V T - ^ 3 -1 5 - NPN TRANSISTOR POWER MODULE . HIGH CURRENT POWER BIPOLAR MODULE

LAL04 taiyo yuden

Abstract: LAL04 LAL04TB MS620J laL03 LHF15BB f0630 LAL05 945M0 20M20
Contextual Info: アキシャルリードインダクタ AXIAL LEADED INDUCTORS OPERATING TEMP K25VJ105C（製品自己発熱を含む） fIncluding self-generated heatg 特長 FEATURES Y自動挿入に対し極めて高い信頼性を有するインダクタ Y自動化高速ラインによる生産の為量産性に優れかつ高品質

1001d

Contextual Info: CYPRESS PRELIMINARY C Y 7 C 95 4D X ATM HOTLink Transceiver Features technology, functionality, and integration over the field proven CY7B923/933 HOTLink. Second generation HOTLink technology UTOPIA level I and II compatible host bus interface Three-bit Multi-phy address capability built-in

FBD25

Abstract: hesd 50 FBD15 MA6 rs232 driver jack p4 2.1mm JP21-JP24 ColdFire v5 nc10 samsung EVCC12 qd33
Contextual Info: A B C 7 18 31 42 VCC VCC VCC VCC GND GND GND GND 28 34 39 45 GND GND GND GND 4 10 15 21 +3.3 4x 4.7K 1 PP[0:7] RP6 7 5 3 1 7 5 3 1 8 6 4 2 8 6 4 2 7 18 31 42 28 34 39 45 4x 4.7K 1A1 1A2 1A3 1A4 1A5 1A6 1A7 1A8 2A1 2A2 2A3 2A4 2A5 2A6 2A7 2A8 1DIR 1OE 2OE 2DIR

75M05

Contextual Info: フェライトビーズインダクタ （リードタイプ） LEADED FERRITE BEADS INDUCTORS OPERATING TEMP. K25VJ85C 特長 FEATURES YUse of high loss ferrite material. YEasy mounting on PC boards. YAvailable in a wide range of values and configurations to suit most

qml-38535

Abstract: CDFP2-F10 CQCC1-N20 GDFP1-F10 003001b
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MODA APPROVED Make change to interim electricals as specified in TABLE In accordance with N.O.R. 5962-R042-96. 96-01-17 M. A. FRYE Add case outline H and device type 02. Make changes to 1.2.2, 1.3, 1.4, TABLE I, and FIGURE 1. ro

Contextual Info: N AMER PHILIPS/DISCRETE D bb53R31 0030540 TOO • APX Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bR E » bb53R31 0030625 4M7 « A P X Preliminary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: P hilips Sem iconductors ^53=131 0030006 000 • A PX eliminary specification BLF276 VHF pow er MOS transistor N AMER PHILIPS/DISCRETE b 'lE PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability DESCRIPTION Silicon N-channel enhancement

3100U

Abstract: MD110
Contextual Info: Freescale Semiconductor, Inc. Data Sheet C-3e NETWORK PROCESSOR Freescale Semiconductor, Inc. SILICON REVISION A1 C3ENPA1-DS/D Rev 03 PRELIMINARY For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.

k10l

Abstract: BA 345 F0236
Contextual Info: フェライトビーズインダクタ （リードタイプ） LEADED FERRITE BEADS OPERATING TEMP. K25VJ85C 特長 FEATURES YUse of high loss ferrite material. YEasy mounting on PC boards. YAvailable in a wide range of values and configurations to suit most

LAL45TB100K

Abstract: LAL04 LAL 2.25 LAL04TB lhl 130 LHLC06 LAL03 LAN02 LAL02TB 3M Touch Systems
Contextual Info: アキシャルリードインダクタ AXIAL LEADED INDUCTORS OPERATING TEMP K25VJ105C（製品自己発熱を含む） fIncluding self-generated heatg 特長 FEATURES Y自動挿入に対し極めて高い信頼性を有するインダクタ Y自動化高速ラインによる生産の為量産性に優れかつ高品質

Contextual Info: 巻線データラインフィルタ WOUND TORROIDS AND BEADS OPERATING TEMP. K25VJ105 C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES YUse of high loss ferrite materials for excellent high frequency noise absorption. YHigh impedance for normal mode applications.

MD109

Abstract: MD110 RX 3E MD127 MD69 md72 w16 marking code CP-14
Contextual Info: Freescale Semiconductor, Inc. Data Sheet C-3e NETWORK PROCESSOR Freescale Semiconductor, Inc. SILICON REVISION A1 C3ENPA1-DS/D Rev 03 PRELIMINARY For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Freescale Semiconductor, Inc.

AM28F256

Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current

TL7733ID

Abstract: 29LV004 mARKING CODE LA4 mc5206 simm EDO 72pin AM29LV004DT Venkel C0805X7R500104KNE 2032LV tl7705 marking sday
Contextual Info: M5206EC3 USER'S MANUAL REVISION 1.2 Cadre III A Framework for Solutions 4150 Freidrich Lane Suite D Austin, Texas 78744 Support: USA only : (800) 410-2031 (512) 326-9455 Email: support@cadreiii.com Web: www@cadreiii.com LIMITED WARRANTY Cadre III warrants this product against defects in material and workmanship for a period of sixty

50M13

Contextual Info: ラジアルリードインダクタ RADIAL LEADED INDUCTORS OPERATING TEMP. K25VJ105C（製品自己発熱含む） fIncluding self-generated heatg 特長 FEATURES YLHL08~LHL16シリーズはケースfLHFGGGBBはベースgタイプであるの で基板上での自立安定性に優れる

QD30

Abstract: RD20 RD30 SD20 SD30 NDK oscillators
Contextual Info: SIMPLE PACKAGED CRYSTAL OSCILLATORS 3800 SERIES • Model 3824A ■ Main applications: Communications equipment. ■ Features 8 Sine wave output. 8 Wide frequency range covering high frequency. 8 Low power consumption 3829A ■ Specification Model 3824A Spec. Code

B24 c3

Abstract: marking code M21 md108 CP-14 OC48 OC341 concatenated and OC-3 and STM-1 FIN26 tlu 355 QA-14
Contextual Info: Data Sheet C-5e NETWORK PROCESSOR SILICON REVISION B0 C5ENPB0-DS Rev 08 PRODUCTION Data Sheet C-5e Network Processor Silicon Revision B0 C5ENPB0-DS Rev 08 2005 Freescale Semiconductor, Inc. All rights reserved. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.

RD20

Abstract: RD30 SD20 SD30 QD30 trimmer 106 3824A
Contextual Info: #4. P105-125 02.2.5 4:06 PM ページ 112 CRYSTAL OSCILLATORS SIMPLE PACKAGED CRYSTAL OSCILLATORS 3800 SERIES • Model 3824A ■ Main applications: Communications equipment. ■ Features 8 Sine wave output. 8 Wide frequency range covering high frequency.