Q973 Search Results

XY 805 ic

Abstract: microwave transducer marking A04 BFY180 on semiconductor marking code A04
Contextual Info: HiRel NPN Silicon RF Transistor BFY 180 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low power amplifiers at collector currents from 0.2 to 2.5 mA ¥ Hermetically sealed microwave package ¥ fT = 6.5 GHz, F = 2.6 dB at 2 GHz ¥ qualified ¥ ESA/SCC Detail Spec. No.: 5611/006

A03 transistor

Abstract: BFY280
Contextual Info: HiRel NPN Silicon RF Transistor BFY 280 Features ¥ HiRel Discrete and Microwave Semiconductor ¥ For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA ¥ Hermetically sealed microwave package ¥ fT = 7.2 GHz, F = 2.5 dB at 2 GHz ¥

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY180 Features • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0.2 to 2.5 mA • Hermetically sealed microwave package • f T = 6.5 GHz, F = 2.6 dB at 2 GHz •

Q971

Abstract: BFY180
Contextual Info: BFY180 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. • Hermetically sealed microwave package • fT= 6,5 GHz F = 2.6 dB at 2 GHz • Space Qualified

Contextual Info: SIEMENS HiRel NPN Silicon RF Transistor BFY 280 Features • HiRel Discrete and Microwave Semiconductor • For low noise, low power amplifiers at collector currents from 0.2 mA to 8 mA • Hermetically sealed microwave package • f T = 7.2 GHz, F = 2.5 dB at 2 GHz

q973

Contextual Info: BFY180 HiRel NPN Silicon RF Transistor • • • • • HiRel Discrete and Microwave Semiconductor 4 3 1 2 For low power amplifiers at collector currents from 0,2 mA to 2,5 mA. Hermetically sealed microwave package fT= 6,5 GHz F = 2.6 dB at 2 GHz Space Qualified