Q2 PACKAGE Search Results

Contextual Info: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. 1.64 PANDUIT PART NUMBER MS4W75T30-Q2 MS6W75T30-Q2 MS8W75T30-Q2 MS10W75T30-Q2 .03 41.8 0.8 STRAPPING PACKAGE QUANTITY 25 25 25 25

Contextual Info: MT6L71FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L71FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07FS MT3S11AFS Symbol Rating Q1 Q2 VCBO 10

HN1L03FU

Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package

F100K

Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
Contextual Info: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Top View PLCC J28-1 18 Q1 Q1 VCCA 2 1 VCC VCC 28 27 Q2 26 Q2 Q0 1 2 SD2 CD2 CP2 3 4 5 6 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12

Pch MOS FET

Abstract: HN1L03FU
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common Low threshold voltage Q1: Vth = 0.8~2.5V High speed Q2: Vth =−0.5~−1.5V Small package

F100K

Abstract: SY100S331 SY100S331FC SY100S331JC SY100S331JCTR
Contextual Info: TRIPLE D FLIP-FLOP FEATURES BLOCK DIAGRAM VEE VEES CD Q2 CP MR D Q2 SD SD1 D1 4 3 Q1 Q1 VCCA 2 1 Top View PLCC J28-1 VCC VCC 28 27 18 Q2 26 Q2 1 2 SD2 CD2 3 4 5 6 CP2 Q0 D2 MS CPC SD1 MR VEE 24 23 22 21 20 19 18 17 Top View 16 Flatpack 15 F24-1 14 13 7 8 9 10 11 12

HN1L03FU

Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package

HN1L03FU

Abstract: FET MARKING Silicon NP Channel MOS FET High Speed Power Switching
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common z Low threshold voltage Q1: Vth = 0.8~2.5V z High speed Q2: Vth =−0.5~−1.5V z Small package

Pch MOS FET

Abstract: HN1L03FU
Contextual Info: HN1L03FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L03FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common l Low threshold voltage Q1: Vth = 0.8~2.5V l High speed Q2: Vth =−0.5~−1.5V l Small package

Contextual Info: IRF7904PbF-1 HEXFET Power MOSFET VDS 30 RDS on max Q1 V 16.2 (@VGS = 10V) mΩ RDS(on) max Q2 10.8 (@VGS = 10V) Qg (typical) Q1 7.5 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 7.6 ID(@TA = 25°C)Q2 11 nC G1 1 8 D1 S2 2 7 S1 / D2 S2 3 6 S1 / D2 G2 4 5 S1 / D2 SO-8

150J10

Abstract: mje 13006
Contextual Info: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: E1 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1) 3. Collector (Q2)

Contextual Info: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • SMALL PACKAGE OUTLINE: 1.0±0.05 0.8 +0.07 -0.05 LOW HEIGHT PROFILE: 1 E1 6 5 2 C2 3 B1 E2 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1 2. Emitter (Q1) 3. Collector (Q2)

IRF9910PBF

Contextual Info: IRF9910PbF-1 VDS 20 RDS on m ax Q1 HEXFET Power MOSFET V 13.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 9.3 (@VGS = 10V) Qg (typical) Q1 7.4 Qg (typical) Q2 15 ID(@TA = 25°C)Q1 10 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A ID(@TA = 25°C)Q2 12 Applications

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V

Pch MOS FET

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU High Speed Switching Applications Analog Switch Applications Unit in mm Q1, Q2 common 2.5V gate drive Low threshold voltage Q1: Vth = 0.5~1.5V High speed Q2: Vth =−0.5~−1.5V

IRF7907PBF

Contextual Info: IRF7907PbF-1 HEXFET Power MOSFET VDS 30 RDS on m ax Q1 V 16.4 (@VGS = 10V) mΩ RDS(on) m ax Q2 11.8 (@VGS = 10V) Qg (typical) Q1 6.7 Qg (typical) Q2 14 ID(@TA = 25°C)Q1 9.1 ID(@TA = 25°C)Q2 11 nC S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SO-8 A Applications

Contextual Info: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Corresponding three-pin products: fSM mold products Symbol Q2 MT3S11FS MT3S11AFS Rating Q1 Q2 Unit Collector-base voltage

Contextual Info: INTEGRATED CIRCUITS PTN2111 1:10 LVDS clock distribution device Objective specification Philips Semiconductors 1999 Nov 19 Philips Semiconductors Objective specification 1:10 LVDS clock distribution device PTN2111 25 GND 26 Q2 27 Q2 28 Q1 29 Q1 CK 1 24 Q3

EMC3DXV5T5

Contextual Info: EMC2DXV5T1, EMC3DXV5T1, EMC4DXV5T1, EMC5DXV5T1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com 3 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Q1 R2 Q2 R1 4 and Q2, − minus sign for Q1 PNP omitted)

CDCLVD110

Abstract: S-PQFP-G32
Contextual Info: CDCLVD110 PROGRAMMABLE LOW-VOLTAGE 1:10 LVDS CLOCK DRIVER SCAS684 – SEPTEMBER 2002 D Low-Output Skew <30 ps Typical for TQFP PACKAGE (TOP VIEW) Clock-Distribution applications D D D D D 24 23 22 21 20 19 18 17 VSS Q2 Q2 Q1 Q1 Q0 Q0 VDD 25 16 26 15 27 14

Contextual Info: MT6L78FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L78FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 fSM mold products Q2 MT3S11FS MT3S11AFS Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO 13 13 V Collector-emitter voltage

Contextual Info: APTGLQ80HR120CT3G Phase Leg & Dual Common Emitter Power Module High speed Trench & Field Stop IGBT4 Q1, Q2 : VCES = 1200V ; IC = 80A @ Tc = 80°C Trench & Field Stop IGBT3 (Q3, Q4): Application • Uninterruptible Power Supplies Features • Q1, Q2 High speed Trench + field Stop IGBT4

P8208

Abstract: half bridge converter 80V output 15A planar transformer theory R1206 Yageo MCR10EZHF1000 AN1904 SMD R1206 Resistor R0805 1M preset, horizontal solar 4V led buck
Contextual Info: National Semiconductor Application Note 1904 Ajay Hari January 5, 2009 Introduction the input voltage. The other half of the bridge is formed by switches Q1 and Q2. Switches Q1 and Q2 are turned on alternatively usually with a fixed dead-time. Each cycle, when

HN1L02FU

Contextual Info: HN1L02FU TOSHIBA Field Effect Transistor Silicon N•P Channel MOS Type HN1L02FU Unit in mm High Speed Switching Applications Analog Switch Applications Q1, Q2 common z 2.5V gate drive z Low threshold voltage Q1: Vth = 0.5~1.5V z High speed Q2: Vth =−0.5~−1.5V