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    Q1EE17B Search Results

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    Contextual Info: S IE M E N S BFS 481 NPN Silicon RF Transistor * For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA • fx = 8 G H z F= 1.4 dB at 900 M Hz • Two galvanic internal isolated a Transistors in one package lirà u E S P : Electrostatic discharge sensitive device, observe handling precaution!


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    Q62702-F1572 OT-363 23SL0S Q1EE17B 900MHz fl23Sb05 PDF