Q02241B Search Results
Q02241B Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5053-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power • PidB = 45 dBm at 5.0 GHz to 5.3 GHz |
OCR Scan |
TIM5053-30L MW50640196 Q02241b |