Q00G70M Search Results
Q00G70M Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: s C B LSSÊT EK CF007-01 Prelim inary Product Inform ation M ay 1988 1 of 2 Dual-Gate GaAs FET Chip Features □ Implanted Active Layer for Uniformity □ High Insertion Gain Useful to 20 GHz □ +16 dBm PldB at 12 GHz □ Ti/Pt/Au Recessed Gates □ Silicon Nitride Passivation |
OCR Scan |
CF007-01 CF007-01 Q00G70M |