Q 451 Search Results

transistor 20 dB 14 ghz

Abstract: PH1214-300M Radar transistor Common Base configuration transistor 15 GHz
Contextual Info: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 PH1214-300M Rev. 0 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: m in il^ ef Value Code inductor M*i Code .01 .012 .015 .018 000 011 001 009 Capacitors, Resistors & Inductors Code Mh Code Mh Code Code pF/Q pF/Q pF/Q pF/Q yh .16 .12 010 012 1.0 1.2 110 112 10 12 .15 .18 210 212 015 018 100 120 1.5 115 118 15 18 215 218 150

1 bit full adder with carry

Abstract: 1-Bit full adder 1d1200a RS flip flop cmos
Contextual Info: MATRA MbE D M H S ES SfiböMSb Q Q Q Q S Ô 7 b SMMHS 'T - r X - MAY 1988 PRELIMINARY DATA SHEET OPEN ASIC MA GATE ARRAY SERIES - 3 M/ l METAL LAYER MA 0250 - MA 0400 - M A 0800 - M A 1200 H ATURSS • HIGH SPEED CMOS: 2 NS/GATE TYPICAL PROPAGATION DELAY • LOW CONSUMPTION:

Contextual Info: Jp | j - 0 p p q j- j q J p q Provisional Data Sheet No. PD-9.433B I O R Rectifier JANTX2N6802 HEXFET POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N -C H A N N E L 500 Volt, 1 .5 0 HEXFET Product Sum m arf HEXFET technology is the key to International

MN4519BS

Abstract: MN4000B MN4519B
Contextual Info: MN4519B/MN4519BS CMOS Logic MN4000B Series M N4519B/M N4519BS Quad 2-Input M u ltip lex ers • Description P- 3 The M N 4519B/S have follow ing functions in one package. * 4-Bit AND /OR selector * Q uad 2-input data selector * Q uad Exclusive-NOR gate I T ru th Table

transistor c246

Abstract: transistor c245 transistor c243 c243 SA900 L372 c371 transistor SA900BE IS-136 SA7025
Contextual Info: INTEGRATED CIRCUITS SA900 I/Q transmit modulator Preliminary specification IC17 Data Handbook Philips Semiconductors 1997 Sept 16 Philips Semiconductors Preliminary specification I/Q transmit modulator SA900 DO NOT DISTRIBUTE WITHOUT ECN DATED AFTER Sept 16, 1997

size 1806 footprint

Abstract: 1806 footprint FPB-1206-E121P 1812 footprint FPB-0805-A201P 0805 size footprint
Contextual Info: SPECTRUM CONTROL INC. Surface Mount High Current EMI Filters Ferrite Power Beads Features Ferrite Power Beads • Rated up to 6 Amps ■ Broad range of impedance values available Standard line has values of 7 Q to 600 Q ■ Available in standard EIA/EIAJ chip sizes

548B

Abstract: IRF9230 JANTX2N6806 JANTXV2N6806 080II
Contextual Info: I p| ^ 0 fp Q t ÌO n Q I Provisional Data Sheet No. PD-9.548B I G R Rectifier JANTX2N6806 HEXFET POWER MOSFET JANTXV2N6806 [REF.-MIL-PRF-19500/562] [GENERIC :IRF9230] P -C H A N N E L -200 Volt, 0.80Î2 HEXFET HEXFET technology is the key to International

SN74LVC162244

Contextual Info: SN74LVC162244 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS I SCAS546 - OCTOBER 1995 10Ê 1Y1 1Y2 GND 1Y3 1Y4 Output Ports Have Equivalent 26-Q Series Resistors, So No External Resistors Are Required Typical V q l p Output Ground Bounce < 0.8 V at Vc c = 3.3 V, TA = 25°C

Contextual Info: Advanced Micro Devices Am2091 IEC-Q ISDN Echocancellation Circuit Preliminary Data Sheet Version C 7/90 Amendment Publication # Rev. 118 92 F /0 Issue Date: October 1990 / IEC-Q V.C Preliminary Data Sheet 7/90 1. • Basic System Functions Full duplex data transmission and reception at the U reference point according to the layer 1

Contextual Info: I p| |"0 f f Q tÌ O D Q I Provisional Data Sheet No. PD-9.339E IOR Rectifier JANTX2N6768 HEXFET POWER MOSFET JANTXV2N6768 [REF:MIL-PRF-19500/543] [GENERIC :IRF350] N -C H A N N E L 400 Volt, 0.300Q HEXFET H E X F E T technology is the key to International

Contextual Info: In ÎG r n Q t i O n Q I Provisional Data Sheet No. PD-9.1550 I R Rectifier HEXFET POWER MOSFET IRFN340 N- CHA N N E L Product Summary 400 Volt, 0.55ÎÎ HEXFET H EXFET technology is the key to International Rectifier’s advanced line of power M O S F E T transistors.The effi­

4014B

Abstract: pin diagram of 2 to 4 decoder 4052B logic diagram of dual 2 to 4 decoder 4731B 4034b 4093B 4006B 40194B 4021B
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIG1TAL-CMOS C79 4034B C80 4557B 16 17 18 19 20 21 22 23 9 12 13 14 15 1 2 I I II I I I I Po Pi P2 P3 P4 P5 Pe P7 10- Ds 9 - EOp 11- P/Q 14- A/S 15- CP 13- p u P l Qo Q i Q2 03 04 Os Oe Q7 I I I TTTTI

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

Contextual Info: AmPAL*16XX Family 20-Pin IMOX Programmable Array Logic PAL Elements DISTINCTIVE CHARACTERISTICS • • • • AMD's superior IMOX technology - Guarantees tpo = 15 ns Max. " B " Versions High-Speed, Half-Power ("A L ") and Quarter-Power ("Q ") versions

TDA 7277

Abstract: TDA 8345 TDA 7988 tda 9580 TDA 8344 TDA 9394 TDA 8659 AN tda 8945 j tda 7840 ic tda 9361
Contextual Info: Tem ic S e m i c o n d u c t o r s Addresses Europe France T E M IC F rance L es Q u a d ra n ts 3. av en u e du centre B.P. 309 7 8 0 5 4 S t.-Q u e n tin -e n -Y v e lin e s C ed ex Tel: 33 1 3 0 6 0 7 0 0 0 Fax: 33 1 3 0 6 0 7111 Germany T E M IC T E L E F U N K E N

F-40-5

Abstract: 4538A D540A
Contextual Info: 1. HIGH SPEED CMOS PRODUCT GUIDE Type N u m b e r Fu n ctio n P in Pag e O O A P/A F/A FN T O O A P/A F 02A P/A F/AFN T02A P/A F 03A P/A F/AFN 04A P/A F/A FN T04A P/A F/A FN U 04A P/A F/AFN 05A P/A F 07A P/A F Q U A D 2 - IN P U T N A N D G A T E Q U A D 2 - IN P U T N A N D G A T E

SMD F09

Abstract: MMIC marking code U
Contextual Info: SIEMENS GaAs MMIC CGY94 Preliminary Datasheet * Power amplifier for GSM or AMPS application * Fully integrated 2 stage amplifier * Operating voltage range: 2.7 to 6 V * 2 W output power at 3.6 V * Overall power added efficiency 46 % * Input matched to 50 Q, simple output match

Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current

J11B1

Abstract: J9B1 10A1 10B1 10B2 10B3 11A1 11B1 11B3 SN74CBT16214
Contextual Info: SN74CBT16214 3-T0-1 BUS-SELECT SWITCH SCOS008B-MAY 1 9 9 3 - REVISED FEBRUARY 1995 Switch Connection Between Two Ports 5 -Q TTL-Compatible input and Output Levels Packaged in Plastic 300-mil Shrink Small-Outline DL and Thin Shrink Small-Outiine (DGG) Packages

DSP101

Abstract: 74HC163 DSP202
Contextual Info: I -iS r Q I - DSP101 DSP102 DSP-Compatible Sampling Single/Dual ANALOG-TO-DIGITAL CONVERTERS FEATURES DESCRIPTION • ZERO-CHIP INTERFACE TO STANDARD DSP ICs: AD, AT&T, MOTOROLA, Tl • SINGLE CHANNEL: DSP101 • DUAL CHANNEL: DSP102 Two Serial Outputs or Cascade to Single

Contextual Info: International I R Rectifier HEXFRED1 Preliminary Data Sheet PD -2.607 03/98 HFA08TB60S Ultrafast, Soft Recovery Diode Features • • • • • • VR = 600V Ultrafast Recovery Ultrasoft Recovery Very L o w I rrm Very Low Q rr Guaranteed Avalanche Specified at Operating Conditions

BV EI 304 3160

Abstract: str f 6456 ic sw 2604 BV EI 304 3510 BV EI 303 3535 STR 6755 STR 6456 STR G 6352 AMI Semiconductor 9449 sw 2604 ic
Contextual Info: T e m ic Sales Offices Semiconductors Addresses Europe France TEMIC France Les Quadrants 3, avenue du centre B.P. 309 78054 St.-Q uentin-en-Y velines Cedex Tel: 33 1 3060 7000 Fax: 33 1 3060 7111 Germany TEMIC TELEFUNKEN m icroelectronic GmbH Erfurter Strasse 31

Contextual Info: QQB ILC DATA DEVICE CORPORATION _ r /'Q r RDC-19200 MONOBRID* SERIES I 10, 12, 14, OR 16 BIT INDUSTRIAL RESOLVER TO DIGITAL CONVERTERS FULL FEATURES • LOW COST DESCRIPTION The RDC-19200 Monobrid Series are versatile state-of-the-art resolver to digi­